Semiconductor light emitting device
    31.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US08643044B2

    公开(公告)日:2014-02-04

    申请号:US13222912

    申请日:2011-08-31

    IPC分类号: H01L33/00

    CPC分类号: H01L33/42

    摘要: According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

    摘要翻译: 根据一个实施例,半导体发光器件包括:堆叠结构体,第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层,发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上,并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

    Semiconductor light emitting device and method of manufacturing the same
    32.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08399896B2

    公开(公告)日:2013-03-19

    申请号:US12875503

    申请日:2010-09-03

    IPC分类号: H01L33/30 H01L33/32

    摘要: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

    摘要翻译: 根据一个实施例,半导体发光器件包括n型和p型半导体层,势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间,具有比阻挡层更小的带隙能量,并且包括InGaN。 阻挡层中的至少一个包括第一层,第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N(0

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    33.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110215351A1

    公开(公告)日:2011-09-08

    申请号:US12875822

    申请日:2010-09-03

    IPC分类号: H01L33/32 H01L33/30

    摘要: According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.

    摘要翻译: 根据一个实施例,半导体发光器件包括包括氮化物半导体的n型半导体层,包括氮化物半导体的p型半导体层,发光部分和层叠体。 发光部分设置在n型和p型半导体层之间,并且包括阻挡层和阱层。 阱层与阻挡层堆叠。 所述层叠体设置在所述发光部和所述n型半导体层之间,并且包括第一层和第二层。 第二层与第一层堆叠。 平均层叠体的组成比高于发光部的平均In组成比的0.4倍。 阻挡层的层厚度tb为10纳米以下。

    VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS
    35.
    发明申请
    VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS 有权
    蒸气沉积法和蒸气沉积装置

    公开(公告)号:US20110143463A1

    公开(公告)日:2011-06-16

    申请号:US12875835

    申请日:2010-09-03

    IPC分类号: H01L21/66 C23C16/00 C23C16/34

    摘要: According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

    摘要翻译: 根据一个实施例,公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。 该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子%的III族元素中Al的组分比例的氮化物半导体的第一半导体层, 来自第二出口的原料气体。 该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合,从而沉积包含具有小于10原子%的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

    Vapor deposition method and vapor deposition apparatus
    36.
    发明授权
    Vapor deposition method and vapor deposition apparatus 有权
    气相沉积法和蒸镀装置

    公开(公告)号:US08815717B2

    公开(公告)日:2014-08-26

    申请号:US12875835

    申请日:2010-09-03

    IPC分类号: H01L21/20 H01L21/36

    摘要: According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

    摘要翻译: 根据一个实施例,公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。 该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子%的III族元素中Al的组分比例的氮化物半导体的第一半导体层, 来自第二出口的原料气体。 该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合,从而沉积包含具有小于10原子%的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    37.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20130234106A1

    公开(公告)日:2013-09-12

    申请号:US13601454

    申请日:2012-08-31

    IPC分类号: H01L33/12

    CPC分类号: H01L33/32 H01L33/06 H01L33/12

    摘要: According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.

    摘要翻译: 根据一个实施例,半导体发光器件包括:包含氮化物半导体晶体并且在(0001)表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在(0001)表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层,其设置在与所述第一半导体层的所述发光层相对的一侧上,并向所述第一半导体层施加压缩应力。