公开(公告)号：US07335916B2

公开(公告)日：2008-02-26

申请号：US11412838

申请日：2006-04-28

申请人： Hyun-soo Kim ,  Jae-hee Cho ,  Suk-ho Yoon

发明人： Hyun-soo Kim ,  Jae-hee Cho ,  Suk-ho Yoon

IPC分类号： H01L29/22 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014

摘要： A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a first electrode structure on the hole injection layer; a second electrode structure on the electron injection layer; and a circuit substrate flip-chip bonded with the electrode structures, wherein the first electrode structure comprises a contact metal structure which is mesh- or island-shaped on the hole injection layer to expose a surface portion of the hole injection layer, and a reflective layer which covers the contact metal structure and the exposed surface portion of the hole injection layer, at least an upper portion of the reflective layer being made of silver (Ag) or aluminum (Al), an area ratio of the contact metal structure to the first electrode structure satisfies a following inequality: 0.4≦Apd/Atotal

摘要翻译： 一种半导体发光器件，包括：透明衬底; N型GaN基半导体的电子注入层; 电子注入层上的有源层; 在有源层上的P型GaN基半导体的空穴注入层; 空穴注入层上的第一电极结构; 电子注入层上的第二电极结构; 以及与所述电极结构接合的电路衬底倒装芯片，其中所述第一电极结构包括在所述空穴注入层上网状或岛状的接触金属结构，以暴露所述空穴注入层的表面部分，以及反射 覆盖接触金属结构的层和空穴注入层的露出表面部分，反射层的至少上部由银（Ag）或铝（Al）制成，接触金属结构与 第一电极结构满足以下不等式：0.4 <= A 总共 <1。

公开(公告)号：US20070235814A1

公开(公告)日：2007-10-11

申请号：US11654602

申请日：2007-01-18

申请人： Jae-hee Cho ,  Joon-seop Kwak

发明人： Jae-hee Cho ,  Joon-seop Kwak

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： A GaN-based semiconductor light-emitting device is provided having an improved structure in which the optical output and luminous efficiency are improved. The GaN-based semiconductor light-emitting device includes an n-electrode, a p-electrode, and an n-type semiconductor layer, an active layer and a p-type semiconductor layer, which are disposed between the n-electrode and the p-electrode, wherein the p-electrode includes a first electrode layer formed of Zn or a Zn-based alloy on the p-type semiconductor layer, a second electrode layer formed of Ag or an Ag-based alloy on the first electrode layer, and a third electrode layer formed of a transparent conductive oxide on the second electrode layer.

摘要翻译： 提供了一种具有提高光输出和发光效率的改进结构的GaN基半导体发光器件。 GaN基半导体发光器件包括设置在n电极和p电极之间的n电极，p电极和n型半导体层，有源层和p型半导体层 - 电极，其中所述p电极包括在所述p型半导体层上由Zn或Zn基合金形成的第一电极层，在所述第一电极层上由Ag或Ag基合金形成的第二电极层，以及 由第二电极层上的透明导电氧化物形成的第三电极层。

公开(公告)号：US20070007881A1

公开(公告)日：2007-01-11

申请号：US11410621

申请日：2006-04-25

申请人： Byung-ki Kim ,  Seoung-jae Im ,  Jae-young Choi ,  Eun-sung Lee ,  Eun-joo Jang ,  Jae-hee Cho

发明人： Byung-ki Kim ,  Seoung-jae Im ,  Jae-young Choi ,  Eun-sung Lee ,  Eun-joo Jang ,  Jae-hee Cho

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： B82Y10/00 ,  B82Y20/00 ,  C09K11/642 ,  C09K11/773 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7738 ,  C09K11/7739 ,  C09K11/7768 ,  C09K11/778 ,  C09K11/7786 ,  C09K11/7787 ,  C09K11/7789 ,  C09K11/7794 ,  G02F1/133617 ,  H01J1/74

摘要： A photo-luminescent liquid crystal display (PL LCD) includes: a light control unit which includes a liquid crystal (LC) layer modulating the UV light and electrodes driving the LC layer; and a light emitting layer which emits light by the UV light transmitted through the light control unit. The light emitting layer includes inorganic phosphors and semiconductor quantum dots (QDs) having a quantum confinement effect. The PL LCD includes adding QDs having a high quantum efficiency into luminescent substances having lower light utilization efficiency than other colors, for example, red phosphor having very low quantum efficiency to improve the light utilization efficiency, thereby improving the color balance.

摘要翻译： 光致发光液晶显示器（PL LCD）包括：光控制单元，其包括调制UV光的液晶（LC）层和驱动LC层的电极; 以及通过透过光控制单元的紫外线发光的发光层。 发光层包括具有量子限制效应的无机荧光体和半导体量子点（QD）。 PL LCD包括将具有高量子效率的量子点添加到具有比其它颜色更低的光利用效率的发光物质中，例如具有非常低的量子效率的红色荧光体以提高光利用效率，从而改善色彩平衡。

公开(公告)号：US20060281209A1

公开(公告)日：2006-12-14

申请号：US11506837

申请日：2006-08-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

公开(公告)号：US20060226431A1

公开(公告)日：2006-10-12

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可以获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US07098482B2

公开(公告)日：2006-08-29

申请号：US11071223

申请日：2005-03-04

申请人： Jae-hee Cho ,  Suk-ho Yoon ,  Jeong-wook Lee

发明人： Jae-hee Cho ,  Suk-ho Yoon ,  Jeong-wook Lee

IPC分类号： H01L27/15

CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/325

摘要： A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

摘要翻译： 提供了一种单片白光发光装置。 在单片白色发光器件中的有源层掺杂有形成子带的硅或稀土金属。 包含在单片白色发光器件中的有源层的数量是一个或两个。 当双层白色发光器件中包含两个有源层时，在两个有源层之间插入包层。 根据该发光结构，可以通过半导体发出白色的光，因此不需要荧光体。 与需要荧光体的帮助的传统的白色发光器件相比，单片白色发光器件以低成本容易地制造并应用于广泛的领域。

公开(公告)号：US20110272706A1

公开(公告)日：2011-11-10

申请号：US13188297

申请日：2011-07-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/02 ,  H01L33/50

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。 可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

公开(公告)号：US08002412B2

公开(公告)日：2011-08-23

申请号：US11508910

申请日：2006-08-24

申请人： Jae-hee Cho

发明人： Jae-hee Cho

IPC分类号： G03B21/00

CPC分类号： H04N9/3105 ,  B82Y20/00 ,  G02B5/003 ,  G02B26/02 ,  G02F1/017 ,  G02F2001/0155 ,  G03B21/005

摘要： A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.

摘要翻译： 投影系统包括照亮多个单色光的光源模块，至少一个光调制器，根据每种颜色信号调制由光源模块照亮的光;将由光调制器调制的单色光组合的彩色组合棱镜， 形成图像，投影透镜将由彩色组合棱镜形成的图像投影到屏幕上。 以像素为单位设置包括P型半导体层，本征半导体层和N型半导体层的半导体二极管，以根据反向偏置电压的值吸收或发送单色光。

公开(公告)号：US20100285622A1

公开(公告)日：2010-11-11

申请号：US12842096

申请日：2010-07-23

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/10 ,  H01L33/02

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

公开(公告)号：US07566910B2

公开(公告)日：2009-07-28

申请号：US11220581

申请日：2005-09-08

申请人： Hyun-soo Kim ,  Jae-hee Cho

发明人： Hyun-soo Kim ,  Jae-hee Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/20

摘要： A GaN-based compound semiconductor light emitting device is provided. The semiconductor light emitting device includes a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; a p-type electrode formed on the p-type semiconductor layer; an n-type electrode formed on a second region separated from the first region of the n-type semiconductor layer; a dielectric layer formed on a sidewall of a stack comprising the p-type semiconductor layer, the active layer, and the n-type semiconductor layer; and a reflective layer formed on the dielectric layer.

摘要翻译： 提供了一种GaN基化合物半导体发光器件。 半导体发光器件包括衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p型电极; 形成在与所述n型半导体层的所述第一区域分离的第二区域上的n型电极; 在包括p型半导体层，有源层和n型半导体层的堆叠的侧壁上形成的介电层; 以及形成在电介质层上的反射层。