Heated ovum pick up needle
    36.
    发明申请
    Heated ovum pick up needle 有权
    加热卵子取针

    公开(公告)号:US20050143619A1

    公开(公告)日:2005-06-30

    申请号:US11003161

    申请日:2004-12-03

    摘要: An ovum collection device (20) includes a handle (4) and a collection needle (3) extending from the handle. The collection needle has a sharpened tip (44) for insertion into a follicle of an ovary. A collection duct (5) in fluid communication with the collection needle extends from the handle to a collection bottle (6). A heating arrangement (14) is used to maintain the collection needle at a selected temperature to prevent damage to an oocyte. The heating arrangement may be associated with a needle guide (72) on an ultrasonic probe such as a transvaginal ultrasonic probe (70).

    摘要翻译: 卵收集装置(20)包括手柄(4)和从手柄延伸的收集针(3)。 收集针头具有用于插入卵巢卵泡的锋利尖端(44)。 与收集针流体连通的收集管道(5)从手柄延伸到收集瓶(6)。 加热装置(14)用于将采集针保持在选定的温度以防止损伤卵母细胞。 加热装置可以与例如经阴道超声波探头(70)的超声波探头上的针引导件(72)相关联。

    Linkage support system for a work vehicle
    37.
    发明申请
    Linkage support system for a work vehicle 审中-公开
    工作车辆的联动支援系统

    公开(公告)号:US20050047898A1

    公开(公告)日:2005-03-03

    申请号:US10648014

    申请日:2003-08-26

    IPC分类号: E02F3/38 B66F9/00

    CPC分类号: E02F3/382

    摘要: A linkage support system and method for mounting and supporting a linkage on a work vehicle. The linkage support system includes a load bearing support and a removable linkage pin support rigidly attached to the load bearing support. The work vehicle is, typically, an earthmoving vehicle which includes a frame, a work tool such as a bucket, and a linkage for manipulating the work tool. The load bearing support may be a portion of the frame of the vehicle.

    摘要翻译: 一种用于在工作车辆上安装和支撑连杆的联动支撑系统和方法。 联动支撑系统包括承载支撑件和刚性地连接到承载支撑件的可移除的连接销支撑件。 工作车辆通常是包括框架,诸如铲斗的作业工具以及用于操纵作业工具的联动装置的移土车辆。 承载支撑件可以是车辆的框架的一部分。

    Oxide isolated integrated injection logic with selective guard ring
    39.
    发明授权
    Oxide isolated integrated injection logic with selective guard ring 失效
    具有选择性保护环的氧化物隔离集成注入逻辑

    公开(公告)号:US3962717A

    公开(公告)日:1976-06-08

    申请号:US518445

    申请日:1974-10-29

    申请人: David O'Brien

    发明人: David O'Brien

    摘要: A process for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors incorporates the steps of growing a doped epitaxial layer of single-crystal silicon on a silicon substrate, applying a first insulation material in a selected pattern over the epitaxial layer to define oxide-isolation regions and device regions, etching grooves in the areas in which oxide-isolation regions will be formed, applying a self-aligned base insulation material over those portions of the interface between the first insulation material and the grooves which bound the region between the base of any vertical bipolar transistor to be formed and the emitter of any lateral bipolar transistor to be formed, applying an impurity of a conductivity type opposite to the conductivity type of the epitaxial layer to those groove areas not covered by the self-aligned base insulation material, the impurity serving to prevent emitter-to-collector inversion along the wall of the base of any vertical bipolar transistor without shorting the emitter and collector of any lateral bipolar transistor, forming oxide-isolation regions in the grooves and forming the vertical bipolar transistors and the lateral bipolar transistors in the device regions. The process of the present invention will produce discrete lateral bipolar transistors, discrete vertical bipolar transistors capable of operation in the conventional mode or in the inverse mode, or a composite structure which merges both a vertical bipolar transistor and a lateral bipolar transistor together on the same silicon island to form an injection-logic gate in which the base of the vertical bipolar transistor serves as the collector of the lateral bipolar transistor, the vertical transistor being operated in the inverse mode.

    摘要翻译: 用于制造氧化物隔离的垂直双极晶体管和互补氧化物隔离的横向双极晶体管的工艺包括在硅衬底上生长单晶硅的掺杂外延层的步骤,在外延层上施加选定图案中的第一绝缘材料 为了限定氧化物隔离区域和器件区域,在其中将形成氧化物隔离区域的区域中蚀刻凹槽,在第一绝缘材料和界定了氧化物隔离区域的沟槽之间的界面的那些部分上施加自对准的基底绝缘材料 要形成的任何垂直双极晶体管的基极和要形成的任何横向双极晶体管的发射极之间的区域,将与外延层的导电类型相反的导电类型的杂质施加到未被自对准的那些沟槽区域, 对准基体绝缘材料,该杂质用于防止发射极与集电极之间的反转 任何垂直双极晶体管的基极的壁,而不会短路任何横向双极晶体管的发射极和集电极,在沟槽中形成氧化物隔离区域,并在器件区域中形成垂直双极晶体管和横向双极晶体管。 本发明的方法将产生离散横向双极晶体管,能够以常规模式或逆模式工作的离散垂直双极型晶体管,或者将垂直双极晶体管和横向双极晶体管同时并联在一起的复合结构 硅岛形成注入逻辑门,其中垂直双极晶体管的基极用作横向双极晶体管的集电极,垂直晶体管以反向模式工作。

    OPTOELECTRONIC COMPONENT
    40.
    发明申请
    OPTOELECTRONIC COMPONENT 有权
    光电组件

    公开(公告)号:US20130200411A1

    公开(公告)日:2013-08-08

    申请号:US13703075

    申请日:2011-05-24

    IPC分类号: H01L33/48

    摘要: An optoelectronic component includes a circuit board having a top side with a chip connection region, an optoelectronic semiconductor chip fixed to the chip connection region, a housing body fixed to the circuit board at the top side of the circuit board and having a reflector region, wherein the reflector region includes an opening in the housing body, the optoelectronic semiconductor chip being arranged in the opening, and the housing body is formed with a plastics material which is metallized at least in selected locations in the reflector region.

    摘要翻译: 光电部件包括具有芯片连接区域的顶侧的电路板,固定到芯片连接区域的光电子半导体芯片,固定到电路板顶侧的电路板并具有反射器区域的壳体主体, 其中所述反射器区域包括在所述壳体中的开口,所述光电子半导体芯片布置在所述开口中,并且所述壳体主体形成有至少在所述反射器区域中的选定位置被金属化的塑料材料。