公开(公告)号：US20060011942A1

公开(公告)日：2006-01-19

申请号：US11011878

申请日：2004-12-13

Applicant: Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

Inventor： Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

IPC: H01L31/0328 ,  H01L21/8232

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US09063302B2

公开(公告)日：2015-06-23

申请号：US13443843

申请日：2012-04-10

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/36 ,  G02B6/38 ,  G02B6/42 ,  G02B6/12

CPC classification number: G02B6/3897 ,  G02B6/423 ,  G02B6/4249 ,  G02B6/4292 ,  G02B2006/12107

Abstract: Provided are an optical connector capable of improving optical alignment efficiency and an optical device having the same. The connector may include a body having a top surface and a bottom surface facing each other, through holes penetrating the body to connect the top and bottom surfaces, and alignment keys provided on at least side surface of the body to be parallel to the through holes.

Abstract translation: 提供能够提高光取向效率的光连接器和具有该光连接器的光学装置。 连接器可以包括具有顶表面和底表面彼此面对的主体，穿过穿过主体以连接顶表面和底表面的孔以及设置在主体的至少侧表面上以与通孔平行的对准键 。

公开(公告)号：US09025920B2

公开(公告)日：2015-05-05

申请号：US13620560

申请日：2012-09-14

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42 ,  G02B6/30 ,  G02B6/122

CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B2006/12061

Abstract: Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.

Abstract translation: 提供了具有其的光耦合器件和硅光子芯片。 光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层 覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。 第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。

公开(公告)号：US08644657B2

公开(公告)日：2014-02-04

申请号：US13175567

申请日：2011-07-01

Applicant: Sahnggi Park ,  Gyungock Kim

Inventor： Sahnggi Park ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42

CPC classification number: H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

公开(公告)号：US20130136396A1

公开(公告)日：2013-05-30

申请号：US13620636

申请日：2012-09-14

Applicant: Do Won KIM ,  Gyungock Kim

Inventor： Do Won KIM ,  Gyungock Kim

IPC: G02B6/34

CPC classification number: G02B6/34

Abstract: Disclosed is a grating coupler which includes an optical waveguide transferring an optical signal; and a diffraction grating formed on the optical waveguide. The diffraction grating includes protrusions continuously formed and the protrusions have different heights.

Abstract translation: 公开了一种光栅耦合器，其包括传输光信号的光波导; 以及形成在光波导上的衍射光栅。 衍射光栅包括连续形成的突起，突起具有不同的高度。

公开(公告)号：US08288185B2

公开(公告)日：2012-10-16

申请号：US12788542

申请日：2010-05-27

Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

IPC: H01L21/00

CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

公开(公告)号：US07995625B2

公开(公告)日：2011-08-09

申请号：US12499069

申请日：2009-07-07

Applicant: Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

Inventor： Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

IPC: H01S3/098 ,  H01S3/03 ,  H01S3/082

CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125

Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

公开(公告)号：US20110135252A1

公开(公告)日：2011-06-09

申请号：US12816323

申请日：2010-06-15

Applicant: Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

Inventor： Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

IPC: G02B6/30 ,  G02B6/10

CPC classification number: G02B6/43 ,  G02B6/262 ,  G02B6/4292

Abstract: Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.

Abstract translation: 提供了与发光器件热分离的硅光子芯片。 硅光子芯片包括集成在硅衬底上的光电器件。 光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。 信号光产生装置与光电装置热分离，并与光电装置光学连接。

公开(公告)号：US20100111469A1

公开(公告)日：2010-05-06

申请号：US12684677

申请日：2010-01-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/122

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US20050098836A1

公开(公告)日：2005-05-12

申请号：US10866274

申请日：2004-06-10

Applicant: Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

Inventor： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC: H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H01L45/00 ,  H01L49/00 ,  H02H9/02 ,  H01L29/94

CPC classification number: H01L45/00

Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。