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公开(公告)号：US20110256314A1
公开(公告)日：2011-10-20
申请号：US12904461
申请日：2010-10-14
IPC分类号： C23C16/18
CPC分类号： C23C16/45553 , C07F7/003 , C23C16/405
摘要： A method for forming metal-containing films by atomic layer deposition using precursors of the formula: M(OR1)(OR2)(R3C(O)C(R4)C(O)XR5y)2 wherein M is Group 4 metals; wherein R1 and R2 can be same or different selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl; R3 can be selected from the group consisting of linear or branched C1-10 alkyls, preferably C1-3 alkyls and a C6-12 aryl; R4 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen; R5 is selected from the group consisting of C1-10 linear or branched alkyls, and a C6-12 aryl, preferably a methyl or ethyl group; X═O or N wherein when X═O, y=1 and R1, 2 and 5 are the same, when X═N, y=2 and each R5 can be the same or different.
摘要翻译： 使用下式的M（OR1）（OR2）（R3C（O）C（R4）C（O）XR5y）2的前体通过原子层沉积形成含金属膜的方法，其中M是第4族金属; 其中R1和R2可以相同或不同，选自直链或支链C 1-10烷基和C 6-12芳基; R 3可以选自直链或支链C 1-10烷基，优选C 1-3烷基和C 6-12芳基; R 4选自氢，C 1-10烷基和C 6-12芳基，优选氢; R5选自C1-10直链或支链烷基，和C6-12芳基，优选甲基或乙基; X = O或N，其中当X = O，y = 1且R 1，2和5相同时，当X = N，y = 2，并且每个R 5可以相同或不同时。
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公开(公告)号：US20110135838A1
公开(公告)日：2011-06-09
申请号：US12950352
申请日：2010-11-19
摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.
摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R 4选自C 1-6烷基，优选在2,5位取代的支链C 3-5烷基，以防止以“1”方式与金属中心配位的吡咯基; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。
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33.发明授权Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides 有权Ti，Ta，Hf，Zr和金属硅氮化物的ALD / CVD的相关金属硅酰胺，氧化物或氮氧化物公开(公告)号：US07754906B2
公开(公告)日：2010-07-13
申请号：US11522768
申请日：2006-09-18
IPC分类号： C07F7/18
CPC分类号： C07F11/005 , C07F7/003 , C07F9/005
摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.
摘要翻译： 由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R1-4可以相同或不同，选自二烷基酰胺，二氟烷基酰胺，氢，烷基，烷氧基，氟代烷基 和烷氧基，脂环族和芳基，另外条件是当R1和R2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基时，它们可以连接形成环。 还公开了相关化合物。 还包括使用复合物的CVD和ALD沉积方法。
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公开(公告)号：US20100143607A1
公开(公告)日：2010-06-10
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。
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公开(公告)号：US07442822B2
公开(公告)日：2008-10-28
申请号：US11514650
申请日：2006-09-01
IPC分类号： C07F7/10
CPC分类号： C07F7/20
摘要： A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.
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36.发明申请公开(公告)号：US20080058541A1
公开(公告)日：2008-03-06
申请号：US11514650
申请日：2006-09-01
IPC分类号： C07F7/10
CPC分类号： C07F7/20
摘要： A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.
摘要翻译： 公开了一种使含氮或含氧有机硅烷从酸催化的作用发生稳定并延缓所产生的分解的过程。 这种有机硅烷和含氮有机硅烷，特别是含有至少一个Si-H或N-H基团，对这种类型的产物分解是敏感的。 弱碱性离子交换介质的处理通过清除正在攻击Si-H基团的阴离子或酸来阻止这种分解。 对这些阴离子的稀释曝光可以引发显着的分解，并且对于使用氧化硅，氮氧化硅和氮化硅膜的半导体处理，可以产生产品稳定性和长期保质期。
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公开(公告)号：US20060182885A1
公开(公告)日：2006-08-17
申请号：US11057446
申请日：2005-02-14
申请人： Xinjian Lei , Hareesh Thridandam , Kirk Cuthill , Arthur Hochberg
发明人： Xinjian Lei , Hareesh Thridandam , Kirk Cuthill , Arthur Hochberg
IPC分类号： C23C16/00
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/345 , C23C16/45531 , C23C16/45553 , H01L21/02142 , H01L21/0215 , H01L21/02153 , H01L21/02205 , H01L21/02216 , H01L21/02219 , H01L21/0234 , H01L21/28562 , H01L21/28568 , H01L21/318
摘要： This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=
摘要翻译： 本发明涉及通过循环沉积前体制备三元金属氮化硅膜的改进方法。 改进在于使用具有NH和SiH官能团的金属酰胺和硅源作为导致形成这种金属SiN膜的前体。 通过循环沉积顺序地将前体施加到衬底的表面上。 示例性硅源是由下式表示的单烷基氨基硅烷和肼基吡啶：<？in-line-formula description =“In-line formula”end =“lead”？>（R 1） （n = 1,2; m = 0,1,2; n + 1）n + m = <3）; <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> and <？in-line -formulae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> （2）N-NH（x-1）2（x） 1,2; y = 0,1,2; x + y = <3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中在上式R < 1-4是相同或不同的并且独立地选自烷基，乙烯基，烯丙基，苯基，环烷基，氟代烷基，甲硅烷基烷基。
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38.发明授权公开(公告)号：US07064224B1
公开(公告)日：2006-06-20
申请号：US11051140
申请日：2005-02-04
CPC分类号： C07F15/065 , C07F7/10 , C07F15/025 , C07F15/045 , C23C16/18
摘要： This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers.The organometallic precursors are N,N′-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.
摘要翻译： 本发明涉及用于在诸如硅，金属氮化物和其它金属层的衬底上制造含适形金属膜的有机金属前体和沉积工艺。 有机金属前体是由下式表示的N，N'-烷基-1,1-烷基甲硅烷基氨基金属络合物：其中M是选自VIIb，VIII，IX和X族的金属，具体实例包括钴，铁，镍，锰 ，钌，锌，铜，钯，铂，铱，铼，锇和R 1-5可以相同或不同，选自氢，烷基，烷氧基，氟烷基和烷氧基，脂环族和 芳基。
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公开(公告)号：US08771807B2
公开(公告)日：2014-07-08
申请号：US13474076
申请日：2012-05-17
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译： 本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。 本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。 还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。
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公开(公告)号：US08691710B2
公开(公告)日：2014-04-08
申请号：US13362077
申请日：2012-01-31
IPC分类号： C07D207/46 , H01L21/70
CPC分类号： C23C16/45553 , C07F7/003 , C23C16/405
摘要： Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, R8 and R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.
摘要翻译： 含有通式（1）（R1nPyr）（R2nPyr）的金属络合物ML1L2; 或（2）[（R8XR9）（R1nPyr）（R2nPyr）] ML1L2; 其中M是第IV族金属，Pyr是吡咯基配体，n = 1,2和3，L1和L2独立地选自烷氧基，酰胺或烷基，L1和L2可以连接在一起，R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团，并且选自直链和支链C 1-6烷基，R 8和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 原子，X是CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。
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