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    METHODS FOR REDUCING METAL OXIDE SURFACES TO MODIFIED METAL SURFACES
    31.
    发明申请
    METHODS FOR REDUCING METAL OXIDE SURFACES TO MODIFIED METAL SURFACES 审中-公开
    将金属氧化物表面还原成改性金属表面的方法

    公开(公告)号：US20140199497A1

    公开(公告)日：2014-07-17

    申请号：US13741151

    申请日：2013-01-14

    申请人： Tighe A. Spurlin ,  Steven T. Mayer ,  Jonathan D. Reid ,  Artur Kolics ,  Huanfeng Zhu

    发明人： Tighe A. Spurlin ,  Steven T. Mayer ,  Jonathan D. Reid ,  Artur Kolics ,  Huanfeng Zhu

    IPC分类号： B05D3/10

    CPC分类号： C23C18/1882 ,  C23C18/1653 ,  C25D5/34 ,  C25D21/12 ,  H01L21/76861 ,  H01L21/76873

    摘要： Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer by contacting a solution with a reducing agent with the metal oxide surfaces. The solution with the reducing agent can contact the metal oxide surfaces under conditions that form an integrated film with the metal seed layer, and that reduces reoxidation from exposure the ambient environment. In some embodiments, an additive can be included with the reducing agent to form a surface protecting layer on the metal seed layer. In some embodiments, the metal is copper used in damascene copper structures.

    摘要翻译： 公开了将金属氧化物表面还原成改性金属表面的方法和装置。 通过使溶液与还原剂与金属氧化物表面接触，还原金属氧化物表面以形成与金属种子层一体化的膜。 具有还原剂的溶液可以在与金属种子层形成集成膜的条件下接触金属氧化物表面，并且减少暴露于周围环境中的再氧化。 在一些实施方案中，还原剂可以包含添加剂以在金属种子层上形成表面保护层。 在一些实施例中，金属是铜镶嵌铜结构中使用的铜。

    Method of electroplating using a high resistance ionic current source
    33.
    发明授权
    Method of electroplating using a high resistance ionic current source 有权
    使用高电阻离子电流源的电镀方法

    公开(公告)号：US07967969B2

    公开(公告)日：2011-06-28

    申请号：US12578310

    申请日：2009-10-13

    申请人： Steven T. Mayer ,  Jonathan D. Reid

    发明人： Steven T. Mayer ,  Jonathan D. Reid

    IPC分类号： C25D5/00 ,  C25D7/12 ,  C25D21/12

    CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  Y10S204/07

    摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

    摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而消除系统的电阻。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。

    Semiconductive counter electrode for electrolytic current distribution control
    36.
    发明授权
    Semiconductive counter electrode for electrolytic current distribution control 有权
    用于电解电流分配控制的半导体对电极

    公开(公告)号：US08147660B1

    公开(公告)日：2012-04-03

    申请号：US11731706

    申请日：2007-03-30

    申请人： Steven T. Mayer ,  Jonathan D. Reid

    发明人： Steven T. Mayer ,  Jonathan D. Reid

    IPC分类号： C25D17/10 ,  C25B9/00 ,  C25D5/00

    CPC分类号： C25D17/002 ,  C25D17/001 ,  C25D17/005 ,  C25D17/008 ,  C25D17/06 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/76877 ,  Y10S204/07

    摘要： A semiconductive counter electrode covers a highly electronically conductive electric current buss. The semiconductive counter electrode is impervious to ion flow. A substrate holder is operable to hold a substrate and to form a thin fluid gap between the semiconductive counter electrode and a substrate surface. A thin liquid electrolyte layer is located in the thin fluid gap. A power supply connected to the electric current buss and a peripheral edge of a conductive substrate surface is able to generate a potential difference between the electric current buss and the semiconductive counter electrode, on one side of the electrolyte layer, and the substrate on the other side. The semiconductive counter electrode provides a substantial resistance in the various current flow paths between the electric current buss and the semiconductive counter electrode, on one side, and the conductive substrate surface, on the other, thereby enhancing control of current distribution.

    摘要翻译： 半导体对电极覆盖高度电子导电的电流总线。 半导体对电极不受离子流的影响。 衬底保持器可操作以保持衬底并且在半导体对电极和衬底表面之间形成薄的流体间隙。 薄的液体电解质层位于薄的液体间隙中。 连接到电流母线的电源和导电衬底表面的外围边缘能够在电解质层的一侧上产生电流母线和半导体对电极之间的电位差，并且在另一侧上产生衬底 侧。 半导体对电极在电流总线和半导体对电极之间的一侧和导电基板表面上的各种电流流动路径中提供了显着的电阻，从而增强了电流分布的控制。

    Electrolyte Concentration Control System for High Rate Electroplating
    37.
    发明申请
    Electrolyte Concentration Control System for High Rate Electroplating 有权
    高效电镀电解质浓度控制系统

    公开(公告)号：US20110083965A1

    公开(公告)日：2011-04-14

    申请号：US12577619

    申请日：2009-10-12

    申请人： Jonathan D. Reid ,  Seshasayee Varadarajan ,  Steven T. Mayer

    发明人： Jonathan D. Reid ,  Seshasayee Varadarajan ,  Steven T. Mayer

    IPC分类号： C25D21/18 ,  C25D7/12 ,  C25D17/02

    CPC分类号： C25D17/00 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/02 ,  C25D21/14 ,  C25D21/18

    摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating cell is configured for electroplating with concentrated electrolyte at a temperature of at least about 40° C. Electroplating with electrolytes having Cu2+ concentration of at least about 60 g/L at temperatures of at least about 40° C. results in very fast copper deposition rates, and is particularly well-suited for filling large, high aspect ratio features, such as through-silicon vias.

    摘要翻译： 用于在半导体衬底上填充凹陷特征的电镀设备包括电解质浓缩器，其被配置用于浓缩具有Cu 2+离子的电解质，以形成在20℃下已经过饱和的浓缩电解质溶液。电解质保持在高于 20℃，例如至少约40℃。该设备还包括浓缩电解质储存器和电镀池，其中电镀单元被配置为在至少约40℃的温度下用浓缩电解质电镀。 在至少约40℃的温度下，具有Cu2 +浓度至少约60g / L的电解质的电镀导致非常快的铜沉积速率，并且特别适合于填充大的高纵横比特征，例如通过 硅通孔。

    High Resistance Ionic Current Source
    39.
    发明申请
    High Resistance Ionic Current Source 有权
    高电阻离子电流源

    公开(公告)号：US20100032304A1

    公开(公告)日：2010-02-11

    申请号：US12578310

    申请日：2009-10-13

    申请人： Steven T. Mayer ,  Jonathan D. Reid

    发明人： Steven T. Mayer ,  Jonathan D. Reid

    IPC分类号： C25D21/12 ,  C25D5/00

    CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  Y10S204/07

    摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

    摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而消除系统的电阻。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。