摘要:
To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.
摘要:
Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.
摘要:
Disclosed is a positive photoresist composition comprising an alkali-soluble polysiloxane containing as a copolymerization component at least a structural unit represented by the following formula (I′) and a positive photoresist composition comprising an acid-decomposable polysiloxane containing as a copolymerization component at least a structural unit represented by the following formula (I″): wherein L1 represents at least one divalent linking group selected from —A—OCO—, —A—COO—, —A—NHCO—, —A—NHCOO—, —A—NHCONH—, —A—CONH—, —A—OCONH— and —A—S—, A represents a single bond or an arylene group, X represents a divalent linking group, and n represents an integer of 1 to 6.
摘要:
A composition for anti-reflective coating material is disclosed, comprising a polymer compound having repeating units having specific structure, and optionally a melamine, guanamine, urea, phenol, naphthol or hydroxyanthracene compound substituted by at least one group selected from the group consisting of a methylol group and an alkoxymethyl group at two or more positions. The composition for anti-reflective coating material of the present invention is effective for the reduction of adverse effects of reflection by the substrate in a lithographic process using various radiations. A resist pattern formation process which comprises the use of the composition for anti-reflective coating material is also disclosed.
摘要:
A novel methoxymethyl- or hydroxymethyl-containing phenol compound represented by the following formula (I), (II), (III), (IV) or (V) is disclosed: ##STR1## wherein each R represents CH.sub.2 OCH.sub.3, CH.sub.2 OH, or H, provided that at least three of the R's are CH.sub.2 OCH.sub.3 or CH.sub.2 OH, with at least one thereof being CH.sub.2 OCH.sub.3 ; each R.sub.1 represents CH.sub.2 OCH.sub.3, CH.sub.2 OH, or H, provided that at least two of the R.sub.1 's are CH.sub.2 OH; and each R.sub.2 represents CH.sub.2 OCH.sub.3, CH.sub.2 OH, or H, provided that at least two of the R.sub.2 'S are CH.sub.2 OH.
摘要翻译:公开了由下式(I),(II),(III),(IV)或(V)表示的新的含甲氧基甲基或羟甲基的酚化合物:其中每个 R表示CH 2 OCH 3,CH 2 OH或H,条件是至少三个R是CH 2 OCH 3或CH 2 OH,其中至少一个是CH 2 OCH 3; 每个R 1表示CH 2 OCH 3,CH 2 OH或H,条件是R 1中的至少两个为CH 2 OH; 并且每个R 2表示CH 2 OCH 3,CH 2 OH或H,条件是R 2'S中的至少两个为CH 2 OH。
摘要:
A positive resist composition, includes: (A) a resin having a repeating unit represented by formula (A) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (A) in an alkali developer; and a pattern forming method uses the composition.
摘要:
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要:
A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要:
A positive resist composition comprising: (A) a resin having a repeating unit represented by a specific formula (I) and a repeating unit represented by a specific formula (A1); (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (F) a surfactant represented by a specific formula (II); and a pattern forming method using the same.
摘要:
A positive working resist composition comprising (A1) a resin containing a repeating unit represented by formula (1) defined in the specification and a repeating unit represented by formula (2) defined in the specification and having a property of being insoluble or sparingly soluble in an alkali developing solution and becoming soluble in an alkali developing solution by the action of an acid, and (B) a compound capable of generating sulfonic acid upon irradiation with active rays or radiations in an amount of from 5 to 20% by weight based on the total solid content of the positive working resist composition.