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114 条记录 (耗时 0.035 秒)

    Field-effect transistor, and process for producing field-effect transistor
    35.
    发明授权
    Field-effect transistor, and process for producing field-effect transistor 有权
    场效应晶体管，以及用于产生场效晶体管的工艺

    公开(公告)号：US08530891B2

    公开(公告)日：2013-09-10

    申请号：US12594432

    申请日：2008-02-28

    申请人： Kazuyoshi Inoue ,  Koki Yano ,  Masashi Kasami

    发明人： Kazuyoshi Inoue ,  Koki Yano ,  Masashi Kasami

    IPC分类号： H01L29/12 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.

    摘要翻译： 提供一种提高透明性，电性能，稳定性，均匀性，再现性，耐热性和耐久性的场效应晶体管以及电极之间减小的重叠容量。 场效应薄膜晶体管1001包括栅电极1025，有源层，源电极1022和漏电极1023，其中使用含有铟并且电子载流子浓度小于1018 / cm3的结晶氧化物1021用作 有源层和栅电极1025与源电极1022和漏电极1023自对准。结晶氧化物1021含有与正二价元素或铟不同的正三价元素。

    FIELD-EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD-EFFECT TRANSISTOR
    38.
    发明申请
    FIELD-EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD-EFFECT TRANSISTOR 有权
    现场效应晶体管，以及生产场效应晶体管的方法

    公开(公告)号：US20100117071A1

    公开(公告)日：2010-05-13

    申请号：US12594432

    申请日：2008-02-28

    申请人： Kazuyoshi Inoue ,  Koki Yano ,  Masashi Kasami

    发明人： Kazuyoshi Inoue ,  Koki Yano ,  Masashi Kasami

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.

    摘要翻译： 提供一种提高透明性，电性能，稳定性，均匀性，再现性，耐热性和耐久性的场效应晶体管以及电极之间减小的重叠容量。 场效应薄膜晶体管1001包括栅电极1025，有源层，源电极1022和漏电极1023，其中使用含有铟并且电子载流子浓度小于1018 / cm3的结晶氧化物1021用作 有源层和栅电极1025与源电极1022和漏电极1023自对准。结晶氧化物1021含有与正二价元素或铟不同的正三价元素。

    FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SPUTTERING TARGET
    40.
    发明申请
    FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SPUTTERING TARGET 审中-公开
    场效应晶体管，其制造方法和溅射目标

    公开(公告)号：US20110240988A1

    公开(公告)日：2011-10-06

    申请号：US13060699

    申请日：2009-08-26

    申请人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue

    发明人： Koki Yano ,  Hirokazu Kawashima ,  Kazuyoshi Inoue

    IPC分类号： H01L29/786 ,  H01L21/36 ,  H01L29/22 ,  C23C14/08

    CPC分类号： C23C14/3407 ,  C22C30/04 ,  C22C30/06 ,  C23C14/165 ,  C23F1/20 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/7869

    摘要： A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

    摘要翻译： 一种场效应晶体管，包括：衬底，至少栅电极，栅极绝缘膜，半导体层，用于半导体层的保护层，设置在衬底上的源电极和漏电极，其中源电极和 漏电极与其间的半导体层连接，栅极绝缘膜位于栅电极和半导体层之间，保护层位于半导体层的至少一个表面上，半导体层包括含有In原子的氧化物，Sn原子 和Zn原子，Zn /（In + Sn + Zn）的原子组成比为25原子％以上且75原子％以下，Sn /（In + Sn + Zn）的原子组成比小于50 原子％。