公开(公告)号：US08343594B2

公开(公告)日：2013-01-01

申请号：US12167270

申请日：2008-07-03

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： H05H1/24

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

摘要翻译： 一种用于半导体工艺的成膜装置包括：配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线，第二工艺气体供应 电路，具有第二工艺气体供给管线，其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场，以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭，以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

公开(公告)号：US20110237082A1

公开(公告)日：2011-09-29

申请号：US13154728

申请日：2011-06-07

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/311

CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.

摘要翻译： 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。

公开(公告)号：US07754622B2

公开(公告)日：2010-07-13

申请号：US12441741

申请日：2008-06-06

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795

摘要： Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.

摘要翻译： 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。

公开(公告)号：US20080311760A1

公开(公告)日：2008-12-18

申请号：US12155678

申请日：2008-06-06

申请人： Nobutake Nodera ,  Masanobu Matsunaga ,  Kazuhide Hasebe ,  Kota Umezawa ,  Pao-Hwa Chou

发明人： Nobutake Nodera ,  Masanobu Matsunaga ,  Kazuhide Hasebe ,  Kota Umezawa ,  Pao-Hwa Chou

IPC分类号： H01L21/31 ,  B05C11/10

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.

摘要翻译： 在被配置为选择性地供给包含硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺过程中进行多个循环，在目标衬底上形成氮化硅膜。 每个循环包括在保持第二处理气体的供给关闭状态的同时进行第一处理气体的供给的第一供给步骤和在保持关闭的同时进行第二处理气体的供给的第二供给步骤 - 第一工艺气体的供给状态。 该方法被布置为重复第一循环集合，其中第二供给步骤包括激发第二处理气体的激发周期，以及第二循环，其中第二供给步骤不包括激发第二处理气体的周期。

公开(公告)号：US07462571B2

公开(公告)日：2008-12-09

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： H01L21/31

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20080274302A1

公开(公告)日：2008-11-06

申请号：US12167270

申请日：2008-07-03

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： C23C16/448 ,  C23C16/34

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

摘要翻译： 一种用于半导体工艺的成膜装置包括：配置成供给处理气体的工艺气体供给系统。 工艺气体供给系统包括配置成混合第一和第三处理气体以形成混合气体的气体混合罐;配置成将来自气体混合罐的混合气体供给到处理场的混合气体供应管线，第二工艺气体供应 电路，具有第二工艺气体供给管线，其被配置为在不通过所述气体混合罐的情况下将第二处理气体供给到所述处理场，以及分别设置在所述混合气体供给管线和所述第二处理气体供给管线上的第一和第二切换阀。 控制部分控制第一和第二切换阀的打开和关闭，以便将混合气体和第二处理气体交替地和脉冲地供给到处理场。

公开(公告)号：US20080213479A1

公开(公告)日：2008-09-04

申请号：US12068974

申请日：2008-02-13

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： C23C16/36 ,  C23C16/455 ,  B05C11/00

CPC分类号： C23C16/36 ,  C23C16/45531 ,  C23C16/45546

摘要： A method for forming an SiCN film on a target substrate in a process field is arranged to perform a plurality of cycles. Each cycle includes a first step of performing supply of a first process gas containing a silane family gas; a second step of performing supply of a second process gas containing a nitriding gas; a third step of performing supply of a third process gas containing a carbon hydride gas; and a fourth step of shutting off supply of the first process gas. Each cycle is arranged not to turn any one of the first, second, and third process gases into plasma outside the process field during supply thereof, but to heat the process field to a first temperature, at which the silane family gas, the nitriding gas, and the carbon hydride gas react with each other.

摘要翻译： 在处理场中在目标衬底上形成SiCN膜的方法被布置成执行多个循环。 每个循环包括执行含有硅烷族气体的第一工艺气体的供给的第一步骤; 进行含有氮化气体的第二处理气体的供给的第二工序; 进行含有碳氢化合物气体的第三处理气体的供给的第三工序; 以及关闭所述第一处理气体的供给的第四步骤。 每个循环被布置成在供应期间不将第一，第二和第三处理气体中的任何一个转化为处于工艺场外的等离子体，而是将工艺场加热到硅烷族气体，氮化气体 ，碳氢化合物气体彼此反应。

公开(公告)号：US07351668B2

公开(公告)日：2008-04-01

申请号：US11368481

申请日：2006-03-07

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： H01L21/36 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02271 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/76829

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a carbon hydride gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field while stopping supply of the second process gas to the process field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体和含有碳的第三工艺气体的工艺领域中， 氢化物气体。 该方法交替地包括第一至第四步骤。 第一步骤是将第一和第三工艺气体供应到现场，同时停止向工艺场供应第二工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场提供第一和第三处理气体的同时，向现场供应第二处理气体。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20070032047A1

公开(公告)日：2007-02-08

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  G06F19/00 ,  H01L21/20

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

公开(公告)号：US08563096B2

公开(公告)日：2013-10-22

申请号：US12954767

申请日：2010-11-26

申请人： Masanobu Matsunaga ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

发明人： Masanobu Matsunaga ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

IPC分类号： C23C16/02 ,  H05H1/24

CPC分类号： C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546

摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.

摘要翻译： 使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理 具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。 涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。 成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。