公开(公告)号：US20060056097A1

公开(公告)日：2006-03-16

申请号：US11222913

申请日：2005-09-08

申请人： Minoru Hashimoto ,  Kenji Okada ,  Fuminori Sai ,  Chikako Sasaki ,  Satoshi Yamamoto

发明人： Minoru Hashimoto ,  Kenji Okada ,  Fuminori Sai ,  Chikako Sasaki ,  Satoshi Yamamoto

IPC分类号： G11B21/02 ,  G11B5/09 ,  G11B27/36

CPC分类号： G11B27/36 ,  G11B5/3166 ,  G11B5/455 ,  G11B5/59633 ,  G11B5/59666 ,  G11B2220/2516

摘要： Embodiments of the invention relate to measuring characteristics of a head with an actuator put in a state of being pushed against a crush stop. In one embodiment, with a head placed on an innermost ID side or with the current of a VCM sustained at a magnitude I_mid, a burst pattern is written onto a recording disk. At this stage, the gain of a VGA is equal to its maximum value Gmax. Then, while the current of the VCM is being changed gradually, the gain of the VCA is measured. As the current of the VCM becomes equal to a magnitude I_center, a read element of the head is positioned right above the burst pattern. At that time, the gain of a VGA is equal to its minimum value Gmin. As the read element is further moved to the OD side, the gain of the VGA again becomes equal to the maximum value Gmax. A read/write offset of the head is identified by the magnitudes I_center and I_mid.

摘要翻译： 本发明的实施例涉及测量具有致动器的头部的特性，所述致动器处于被压靠在挤压止动件上的状态。 在一个实施例中，当头部放置在最内侧的ID侧或者VCM的电流维持在幅度I_mid时，突发图案被写入到记录盘上。 在这个阶段，VGA的增益等于其最大值Gmax。 然后，当VCM的电流逐渐变化时，测量VCA的增益。 当VCM的电流变得等于幅度I_center时，头部的读取元件位于突发图案的正上方。 此时VGA的增益等于其最小值Gmin。 当读取元件进一步移动到OD侧时，VGA的增益再次等于最大值Gmax。 磁头的读/写偏移量由I_center和I_mid的大小识别。

公开(公告)号：US20050094299A1

公开(公告)日：2005-05-05

申请号：US10944356

申请日：2004-09-17

申请人： Akira Tokizono ,  Chikako Sasaki ,  Kenji Okada

发明人： Akira Tokizono ,  Chikako Sasaki ,  Kenji Okada

IPC分类号： G11B21/21 ,  G11B5/09 ,  G11B5/596 ,  G11B5/60 ,  G11B20/18 ,  G11B21/02 ,  G11B21/10 ,  G11B21/12 ,  G11B27/36

CPC分类号： G11B5/6005 ,  G11B21/12

摘要： Embodiments of the present invention relate to detecting a flying high state in which a head/slider is flying stably at a high flying position, and then to restore the head/slider to a normal flying position. The detection is made by detecting a read output of a head using a head output detector, and by detecting a gain of a VGA using a gain detector. A control unit uses a value measured in a normal flying state as a reference value to compare a detected value with the reference value. If the compared values differ from each other, the control unit judges that a flying high state has occurred. The control unit, therefore, moves the head/slider to the vicinity of the innermost circumferential track of the disk, or unloads the head/slider.

摘要翻译： 本发明的实施例涉及检测头/滑块在高飞行位置稳定地飞行的飞行高状态，然后将头/滑块恢复到正常的飞行位置。 通过使用头部输出检测器检测头的读取输出，并通过使用增益检测器检测VGA的增益来进行检测。 控制单元使用以正常飞行状态测量的值作为参考值，以将检测值与参考值进行比较。 如果比较值彼此不同，则控制单元判断已经发生飞行高状态。 因此，控制单元将磁头/滑块移动到磁盘的最内圆周轨道附近，或者卸载磁头/滑块。

公开(公告)号：US06831809B2

公开(公告)日：2004-12-14

申请号：US10086204

申请日：2002-02-27

申请人： Naoyuki Kagami ,  Kenji Okada ,  Tetsuo Semba ,  Akira Tokizono ,  Hiroshi Uchida ,  Akinori Yuba

发明人： Naoyuki Kagami ,  Kenji Okada ,  Tetsuo Semba ,  Akira Tokizono ,  Hiroshi Uchida ,  Akinori Yuba

IPC分类号： G11B5596

CPC分类号： G11B5/59622

摘要： A control arrangement having a feedforward system and a feedback system, a control model for generating reference position data from a feedforward control signal is separated into an original control model and a compensation filter. Gain of the feedforward control signal is compensated by a gain compensation circuit to form a feedforward control signal after compensation. The reference position data is input to a feedback controller, and a feedback control signal and feedforward control signal are input to a control object. Coefficients of the compensation filter and the gain compensation circuit are compensated on the basis of a head position trajectory obtained by actual seek operation.

摘要翻译： 具有前馈系统和反馈系统的控制装置，用于从前馈控制信号产生参考位置数据的控制模型被分离成原始控制模型和补偿滤波器。 前馈控制信号的增益由增益补偿电路补偿，以在补偿后形成前馈控制信号。 参考位置数据被输入到反馈控制器，反馈控制信号和前馈控制信号被输入到控制对象。 补偿滤波器和增益补偿电路的系数基于通过实际寻道操作获得的磁头位置轨迹进行补偿。

公开(公告)号：US06682823B2

公开(公告)日：2004-01-27

申请号：US09852753

申请日：2001-05-11

申请人： Kenji Okada

发明人： Kenji Okada

IPC分类号： B32B2520

CPC分类号： H01B1/122 ,  C08G77/12 ,  C08G77/14 ,  C08L83/04 ,  C08L83/06 ,  Y10T428/31663 ,  C08L2666/28

摘要： It is the object of the present invention to provide a curable composition capable of giving a polymer electrolyte showing a high level of ionic conductivity and excellent mechanical strength as well. The invention provides a curable composition for polymer electrolyte which comprises the following constituents (A) to (D) as essential constituents: (A) a polysiloxane having a polyethylene oxide structure-containing group and/or a cyclic carbonate structure-containing group as a substituent on a silicon atom and having two or more SiH groups; (B) a compound having at least one structure selected from the group consisting of a phenylene unit, a siloxy linkage, an Si—N bond, a carbonyl group, an amide linkage and an amino group and having two or more alkenyl groups; (C) a hydrosilylation catalyst; and (D) an electrolyte salt compound.

摘要翻译： 本发明的目的是提供一种固化性组合物，其能够提供显示高水平的离子导电性和优异的机械强度的聚合物电解质。 本发明提供了一种用于聚合物电解质的可固化组合物，其包含以下成分（A）至（D）作为必要组分：（A）具有聚环氧乙烷结构的基团和/或含环状碳酸酯结构的基团作为 硅原子上具有2个以上SiH基的取代基;（B）具有选自亚苯基单元，甲硅烷氧基，Si-N键，羰基，酰胺键中的至少一种结构的化合物 和氨基并且具有两个或更多个烯基;（C）氢化硅烷化催化剂; 和（D）电解质盐化合物。

公开(公告)号：US06574065B1

公开(公告)日：2003-06-03

申请号：US09311307

申请日：1999-05-14

申请人： Sri M. Sri-Jayantha ,  Arun Sharma ,  Hien Dang ,  Tetsuo Ueda ,  Kenji Okada ,  Hideo Asano ,  Tatsuya Endoh ,  Masayuki Takeuchi

发明人： Sri M. Sri-Jayantha ,  Arun Sharma ,  Hien Dang ,  Tetsuo Ueda ,  Kenji Okada ,  Hideo Asano ,  Tatsuya Endoh ,  Masayuki Takeuchi

IPC分类号： G11B2102

CPC分类号： G11B21/083 ,  G11B5/59605

摘要： A method and apparatus for adaptive resonance cancellation in a rotating storage system, includes designing a set of digitally selectable optimum resonance cancellation filters, generating a series of excitation signals for injection into the filters, generating a characteristic resonance frequency based on the excitation signals, and computing an address pointer corresponding to the resonance frequency, to select an optimum resonance cancellation filter.

摘要翻译： 一种用于旋转存储系统中自适应共振消除的方法和装置，包括设计一组数字可选择的最佳共振消除滤波器，产生一系列用于注入滤波器的激励信号，基于激励信号产生特征谐振频率，以及 计算对应于谐振频率的地址指针，以选择最佳谐振消除滤波器。

公开(公告)号：US06530034B1

公开(公告)日：2003-03-04

申请号：US09435085

申请日：1999-11-05

申请人： Kenji Okada ,  Hideo Asano ,  Kazushige Okutsu

发明人： Kenji Okada ,  Hideo Asano ,  Kazushige Okutsu

IPC分类号： H02H305

CPC分类号： G11B5/59683 ,  G11B5/012 ,  G11B19/04 ,  G11B20/1816 ,  G11B27/36 ,  G11B33/14 ,  G11B2005/0016 ,  G11B2020/183 ,  G11B2220/20

摘要： Method and apparatus are described for recovery from temporary errors in a disk drive resulting from excessive temperature or the like. After a first error recovery procedure has been executed and failed, a waiting time is selected after which a second error recovery procedure will be performed. The length of the waiting time can be determined by the measured temperature if a sensor is included in the drive. If the error still cannot be recovered after the waiting period, the location where the error had occurred is temporarily registered as defective. Subsequently the drive will retest the failing location and remove the temporary defect registration if the error has been removed by, for example, the temperature having gone down.

摘要翻译： 描述了用于从过度温度等导致的磁盘驱动器中的临时错误的恢复的方法和装置。 在执行第一个错误恢复过程并失败之后，选择等待时间，之后执行第二个错误恢复过程。 如果驱动器中包含传感器，则可以通过测量的温度来确定等待时间的长度。 如果在等待期后错误仍然无法恢复，则发生错误的位置暂时被注册为有缺陷。 随后，如果错误已经通过例如温度下降而被去除，则驱动器将重新测试故障位置并移除临时缺陷注册。

公开(公告)号：US06525544B1

公开(公告)日：2003-02-25

申请号：US09762951

申请日：2001-02-15

申请人： Kenji Okada

发明人： Kenji Okada

IPC分类号： H01H3112

CPC分类号： G01R31/2648 ,  H01L22/14

摘要： A total injected electron quantity QBD, which has reached a constant value against a variation in stress voltage applied to an insulating film for use in a semiconductor device, is obtained as a critical injected electron quantity QBDcrit. The total injected electron quantity QBD is a total quantity of electrons injected into the insulating film before the film causes a dielectric breakdown. Thereafter, a time it should take for a total quantity of electrons, injected into the insulating film under actual operating conditions of the device, to reach the critical injected electron quantity QBDcrit is estimated as the expected lifetime of the insulating film.

摘要翻译： 作为临界注入电子量QBDcrit，获得了对于施加到半导体器件中使用的绝缘膜的应力电压变化达到恒定值的总注入电子量QBD。 总注入电子量QBD是在膜引起介电击穿之前注入绝缘膜的电子总量。 此后，估计在该器件的实际工作条件下注入到绝缘膜中的达到临界注入电子量QBDcrit的电子总量的时间为绝缘膜的预期寿命。

公开(公告)号：US5612227A

公开(公告)日：1997-03-18

申请号：US401929

申请日：1995-03-09

申请人： Tsuyoshi Inoue ,  Keiichi Nakamachi ,  Takeshi Nakamura ,  Kenji Okada

发明人： Tsuyoshi Inoue ,  Keiichi Nakamachi ,  Takeshi Nakamura ,  Kenji Okada

IPC分类号： G01N33/48 ,  A61J1/05 ,  B01D17/032 ,  B01D17/12 ,  G01F23/16 ,  G01N1/16 ,  G01N35/10 ,  G05D9/12 ,  G01N1/10

CPC分类号： G01F23/165 ,  G05D9/12 ,  Y10T436/111666 ,  Y10T436/115831 ,  Y10T436/119163 ,  Y10T436/2575

摘要： A tube is inserted into a first liquid layer, and an air bubble is generated at a tip opening of the tube. The tube is then moved toward a second liquid layer while retaining the air bubble, and a change in the internal pressure of the tube caused by the air bubble reaching the boundary between the first and second liquid layers is detected. After the tip opening of the tube is raised to the top surface of the first liquid layer, the first liquid is sucked up by the tube while the tube is moved to the position where the pressure change was detected.

摘要翻译： 将管插入到第一液体层中，并且在管的尖端开口处产生气泡。 然后在保持气泡的同时将管移动到第二液体层，并且检测由气泡到达第一和第二液体层之间的边界引起的管的内部压力的变化。 在管的顶端开口升高到第一液体层的顶表面之后，当管移动到检测到压力变化的位置时，第一液体被管吸收。

公开(公告)号：US5391921A

公开(公告)日：1995-02-21

申请号：US83322

申请日：1993-06-29

申请人： Osamu Kudoh ,  Kenji Okada ,  Hiroshi Shiba ,  Takuya Katoh

发明人： Osamu Kudoh ,  Kenji Okada ,  Hiroshi Shiba ,  Takuya Katoh

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002

摘要： A semiconductor device that has a feature in the spatial relationship between the wiring in a multi-level wiring and the intermediate insulating films. In the lower part of the second and/or subsequent levels of wiring there exist intermediate insulating films that have a pattern which is the same as the pattern of the wiring. Because of this arrangement, the intermediate insulating film does not exist between the wiring on the same level. The first structure of the multi-level wiring has the intermediate insulating films formed in wall-like shape, with the lower end of the intermediate insulating films reaching an underlying insulating layer formed on the surface of the semiconductor substrate. The second structure of the multi-level wiring is a quasi air gap metallization structure. As a result of realization of such structures, in the semiconductor device according to the present invention, the parasitic capacitance due to the coupling capacitances between the wiring can be reduced compared with a semiconductor device that has a structure in which the spaces between the wiring are filled with the intermediate films.

摘要翻译： 具有多层配线中的布线与中间绝缘膜之间的空间关系特征的半导体装置。 在第二和/或随后的布线层的下部存在具有与布线图案相同的图案的中间绝缘膜。 由于这种布置，中间绝缘膜不存在于同一层的布线之间。 多层布线的第一结构具有形成为壁状形状的中间绝缘膜，中间绝缘膜的下端到达形成在半导体基板的表面上的下面的绝缘层。 多层布线的第二结构是准气隙金属化结构。 作为实现这种结构的结果，在本发明的半导体器件中，与具有这样的结构的半导体器件相比，能够减少由于布线之间的耦合电容引起的寄生电容， 填充中间膜。

公开(公告)号：US5248854A

公开(公告)日：1993-09-28

申请号：US505322

申请日：1990-04-05

申请人： Osamu Kudoh ,  Kenji Okada ,  Hiroshi Shiba

发明人： Osamu Kudoh ,  Kenji Okada ,  Hiroshi Shiba

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76885 ,  H01L23/5226 ,  H01L23/53242 ,  H01L2924/0002

摘要： An interlayer connection structure for an integrated circuit includes a substrate, a first level horizontal conductor formed on the substrate, an interlayer insulator formed to cover the first level conductor, a second level horizontal conductor formed on the interlayer insulator, and a vertical conductive pillar extending through the interlayer insulator for interconnecting the first level horizontal conductor and the second level horizontal conductor. The vertical conductive pillar has a side surface coplanar with a longitudinal side surface of the first level horizontal conductor at a position where the vertical conductive pillar is in electric contact with the first level horizontal conductor.