Liquid development electrophotographic device
    31.
    发明授权
    Liquid development electrophotographic device 失效
    液体显影电子照相装置

    公开(公告)号:US06898404B2

    公开(公告)日:2005-05-24

    申请号:US10466485

    申请日:2002-08-05

    IPC分类号: G03G15/11 G03G15/10

    摘要: A liquid-development electrophotographic apparatus forms on a toner-image-bearing body a plurality of color images developed by a plurality of developing units, one for each color, that use liquid toner. One or more carrier-removing units for removing excessive carrier from a toner layer that forms a toner image are disposed downstream of each developing unit and upstream of the next developing unit disposed upstream of the former developing unit with respect to a process progress direction. Each carrier-removing unit includes two or more conductive collection rollers to which a bias voltage is applied in such a direction as to press toner against the toner-image-bearing body and which is brought into contact with the toner-image-bearing body. The upstream roller is rotated in the same direction as the direction of surface movement of the toner-image-bearing body, whereas the downstream roller is rotated in the opposite direction. The result is that influence of carrier on the already transferred image is suppressed, and hence occurrences of irregular transfer of the images and occurrences of disturbance of the already transferred image are minimized.

    摘要翻译: 液体显影电子照相设备在调色剂图像承载体上形成由多个显影单元显影的多个彩色图像,每个显影单元一个用于各种颜色,使用液体调色剂。 一个或多个用于从形成调色剂图像的调色剂层除去过量载体的载体去除单元设置在每个显影单元的下游,并且相对于处理进行方向设置在位于前显影单元上游的下一个显影单元的上游。 每个载体移除单元包括两个或更多个导电收集辊,偏压在该方向上施加,以将调色剂压靠在调色剂图像承载体上并与调色剂图像承载体接触。 上游辊沿着与调色剂图像承载体的表面运动方向相同的方向旋转,而下游辊沿相反方向旋转。 结果是,载波对已经传送的图像的影响被抑制,因此图像的不规则传送和已经传送的图像的干扰出现的发生被最小化。

    Method for fabricating semiconductor integrated circuit device

    公开(公告)号:US06417114B1

    公开(公告)日:2002-07-09

    申请号:US09752736

    申请日:2001-01-03

    IPC分类号: C23C1600

    摘要: A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

    Photovoltaic device and process for producing photovoltaic device
    36.
    发明授权
    Photovoltaic device and process for producing photovoltaic device 有权
    光伏器件及其制造方法

    公开(公告)号:US08859887B2

    公开(公告)日:2014-10-14

    申请号:US12997418

    申请日:2009-07-08

    摘要: A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

    摘要翻译: 由于n层和背面透明电极层或中间接触层之间的接触特性的改善,显示出增加的开路电压和改善的填充因子的光电器件,以及用于制造光伏器件的工艺。 光伏器件包括具有层叠在衬底顶部上的p层,i层和n层的光电转换层,其中n层包括含氮的n层和形成在衬底上的界面处理层 含氮n层相对于基板的相对表面,含氮n层包含原子浓度为1%以上且20%以下的氮原子,结晶化比例不小于 0但小于3,并且界面处理层的结晶比不小于1且不大于6。

    Vehicle light
    37.
    发明授权
    Vehicle light 有权
    车灯

    公开(公告)号:US08550676B2

    公开(公告)日:2013-10-08

    申请号:US12901485

    申请日:2010-10-08

    IPC分类号: F21V11/00

    摘要: A vehicle light can include a light emitting diode (LED) serving as a light source and an optical system for controlling a light distribution pattern of the light beams from the LED light source utilizing a light guide (such as a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low beam light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line. Among the light beams, perpendicularly incident light beams not subjected to refraction can be projected toward the bright-dark boundary line while obliquely incident light beams that are subjected to refraction can be corrected to be directed in a lower angular direction than the bright-dark boundary line and to be mixed with the other light beams, thereby preventing color shading of illumination light from the vehicle light.

    摘要翻译: 车灯可以包括用作光源的发光二极管(LED)和用于控制来自LED光源的光束的配光图案的光学系统,其利用光导(例如具有内部反射的透镜体 表面)。 车灯可投射具有近光配光图案的照明光。 车辆灯可以包括LED光源和用作光导的透镜体。 透镜体可以包括光入射表面,反射表面和光出射表面。 LED光源可以具有最后端发光点,光束从该发光点发射以形成明暗的边界线。 在光束中,不会受到折射的垂直入射光束可以投射到明暗边界线,而可以将经受折射的倾斜入射光束校正为比明暗边界更低的角度方向 并且与其他光束混合,从而防止来自车辆灯的照明光的颜色阴影。

    Vehicle light
    38.
    发明授权
    Vehicle light 有权
    车灯

    公开(公告)号:US08388202B2

    公开(公告)日:2013-03-05

    申请号:US12901486

    申请日:2010-10-08

    IPC分类号: F21V5/00 F21V7/00

    摘要: A vehicle light can include an optical system for controlling a light distribution pattern, and the optical system is a light guide (being a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low bean light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line. Among the light beams, perpendicularly incident light beams not subjected to refraction can be projected toward the bright-dark boundary line while obliquely incident light beams being subjected to refraction can be corrected to be directed in a lower angular direction than the bright-dark boundary line to be mixed with the other light beams emitted from other light emitting points of the LED light source, thereby preventing the color shading of illumination light.

    摘要翻译: 车灯可以包括用于控制配光图案的光学系统,并且光学系统是光导(是具有内部反射面的透镜体)。 车灯可以投射具有低光分布图案的照明光。 车辆灯可以包括LED光源和用作光导的透镜体。 透镜体可以包括光入射表面,反射表面和光出射表面。 LED光源可以具有最后端发光点,光束从该发光点发射以形成明暗的边界线。 在这些光束中,不会受到折射的垂直入射光束可以投射到明暗边界线上,而被折射的倾斜入射光束可以被校正为比明暗边界线更低的角度方向 与从LED光源的其他发光点发射的其他光束混合,从而防止照明光的着色。

    SOLID-STATE IMAGING APPARATUS
    39.
    发明申请
    SOLID-STATE IMAGING APPARATUS 有权
    固态成像装置

    公开(公告)号:US20130049156A1

    公开(公告)日:2013-02-28

    申请号:US13547452

    申请日:2012-07-12

    IPC分类号: H01L31/12

    摘要: In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.

    摘要翻译: 在弱内部电场的区域中,在比光电二极管更深的区域产生的光电荷被横向扩散,从而通过流入相邻像素的光电子等(串扰)降低灵敏度。 在光电二极管形成部分中,在像素区域和外围电路区域之间设置抗串扰层。 像素与像素之间或像素区域与外围电路区域之间的串扰减小,以提高光敏性。

    PHOTOELECTRIC-CONVERSION-DEVICE FABRICATION METHOD
    40.
    发明申请
    PHOTOELECTRIC-CONVERSION-DEVICE FABRICATION METHOD 失效
    光电转换器制造方法

    公开(公告)号:US20120135561A1

    公开(公告)日:2012-05-31

    申请号:US13388297

    申请日:2010-05-07

    IPC分类号: H01L31/18

    摘要: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

    摘要翻译: 目的在于获得在光电转换层中具有晶体硅i层的高效光电转换元件。 公开了一种光电转换装置的制造方法,其包括在基板上形成具有主要由晶体硅形成的i层的光电转换层的步骤。 该方法包括根据i层的拉曼比确定i层中的杂质浓度的上限的步骤; 并且形成i层,使其具有等于或小于确定的杂质浓度的上限的值。 或者,根据i层的拉曼比来确定成膜气氛中的杂质浓度的上限,同时在控制杂质 - 气体浓度的同时形成i层,使其具有相等的值 达到或小于确定的上限。