公开(公告)号：US07374346B2

公开(公告)日：2008-05-20

申请号：US11046551

申请日：2005-01-28

申请人： Tsuyoshi Tanaka ,  Tomoyuki Hirose ,  Kaichiro Nakashima ,  Michifumi Shoda

发明人： Tsuyoshi Tanaka ,  Tomoyuki Hirose ,  Kaichiro Nakashima ,  Michifumi Shoda

IPC分类号： G02B6/26 ,  G02B6/42

CPC分类号： G02B6/421 ,  G02B6/4209 ,  G02B6/4292

摘要： In a semiconductor laser module with an optical isolator where the form of a metal holder for holding a fiber stub varies, optical-isolator parts are miniaturized and unified, simplifying product management, reducing delivery time and cost. A fiber stub with an optical isolator is provided in such a manner that a stepped surface is formed on an end surface of a ferrule, where an optical fiber has been inserted and secured to a through hole formed at the center of the ferrule. The fiber stub is formed by attaching an optical isolator element composed of a polarizer and a Faraday rotator to the stepped surface.

摘要翻译： 在具有用于保持光纤短截线的金属保持器的形式的光隔离器的半导体激光器模块中，光隔离器部件被小型化和统一化，简化了产品管理，减少了交付时间和成本。 提供了具有光隔离器的光纤短截线，使得在套圈的端面上形成台阶表面，其中光纤被插入并固定到形成在套圈中心的通孔。 通过将由偏振器和法拉第旋转器组成的光隔离器元件附接到台阶表面来形成光纤短截线。

公开(公告)号：US20080087915A1

公开(公告)日：2008-04-17

申请号：US11878352

申请日：2007-07-24

申请人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L21/336 ,  H01L29/772 ,  H01L31/00

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US07339207B2

公开(公告)日：2008-03-04

申请号：US11455631

申请日：2006-06-20

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

IPC分类号： H01L31/0328

CPC分类号： H01L29/7787 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766

摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

摘要翻译： 半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。

公开(公告)号：US20080034366A1

公开(公告)日：2008-02-07

申请号：US11905517

申请日：2007-10-02

申请人： Tsuyoshi Tanaka ,  Naoki Hamanaka ,  Toshiaki Tarui

发明人： Tsuyoshi Tanaka ,  Naoki Hamanaka ,  Toshiaki Tarui

IPC分类号： G06F9/455 ,  G06F9/50

CPC分类号： G06F9/5083 ,  G06F9/5077 ,  G06F11/3433 ,  G06F2201/81 ,  G06F2201/815 ,  G06F2201/88

摘要： A virtual computer system including a reallocation means, in which a plurality of LPAR are operated by logically dividing physical resources composing a physical computer exclusively or in time dividing manner so as to dynamically change reallocation of physical resources among each of LPARs. Based on load conditions measured by an application or an OS of each LPAR, physical resource allocation to each LPAR is determined, thereby conducting reallocation of LPAR.

摘要翻译： 一种虚拟计算机系统，包括重新分配装置，其中通过逻辑地分离构成物理计算机的物理资源来专门地或以时间分割方式来操作多个LPAR，以动态地改变每个LPAR之间的物理资源的重新分配。 基于由每个LPAR的应用或OS测量的负载条件，确定对每个LPAR的物理资源分配，从而进行LPAR的重新分配。

公开(公告)号：US07290259B2

公开(公告)日：2007-10-30

申请号：US09942611

申请日：2001-08-31

申请人： Tsuyoshi Tanaka ,  Naoki Hamanaka ,  Toshiaki Tarui

发明人： Tsuyoshi Tanaka ,  Naoki Hamanaka ,  Toshiaki Tarui

IPC分类号： G06F9/455 ,  G06F9/50

CPC分类号： G06F9/5083 ,  G06F9/5077 ,  G06F11/3433 ,  G06F2201/81 ,  G06F2201/815 ,  G06F2201/88

摘要： A virtual computer system including a reallocation means, in which a plurality of LPAR are operated by logically dividing physical resources composing a physical computer exclusively or in time dividing manner so as to dynamically change reallocation of physical resources among each of LPARs. Based on load conditions measured by an application or an OS of each LPAR, physical resource allocation to each LPAR is determined, thereby conducting reallocation of LPAR.

摘要翻译： 一种虚拟计算机系统，包括重新分配装置，其中通过逻辑地分离构成物理计算机的物理资源来专门地或以时间分割方式来操作多个LPAR，以动态地改变每个LPAR之间的物理资源的重新分配。 基于由每个LPAR的应用或OS测量的负载条件，确定对每个LPAR的物理资源分配，从而进行LPAR的重新分配。

公开(公告)号：US20070210876A1

公开(公告)日：2007-09-13

申请号：US11570254

申请日：2005-04-28

申请人： Kazuhiro Yahata ,  Tsuyoshi Tanaka ,  Motonori Ishii

发明人： Kazuhiro Yahata ,  Tsuyoshi Tanaka ,  Motonori Ishii

IPC分类号： H03H9/54

CPC分类号： H01P5/10 ,  H01L2224/16227 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01P1/268 ,  H01P5/19 ,  H03H7/422 ,  H03H9/0023 ,  H03H11/32 ,  H03H2009/0019

摘要： An FBAR filter added with a balance-unbalance conversion function is provided. The FBAR filter includes: an FBAR filter device having two unbalanced terminals, and which performs filtering of a signal between such terminals; and a balance-unbalance converter having one unbalanced terminal and one pair of balanced terminals, and which performs balance-unbalance conversion of the signal. The unbalanced terminal and the unbalanced terminal are connected, and filtering and balance-unbalance conversion of the signal is performed between the unbalanced terminal and the balanced terminals. The characteristics of the FBAR filter device are brought forth in the filtering of the signal. The FBAR filter device 108 and the balance-unbalance converter are integrated, and provided as a single component which is compact and low-cost,

摘要翻译： 添加了平衡不平衡转换功能的FBAR滤波器。 FBAR滤波器包括：具有两个不平衡端子并且在这些端子之间执行信号滤波的FBAR滤波器装置; 以及具有一个不平衡端子和一对平衡端子的平衡 - 不平衡转换器，其执行信号的平衡不平衡转换。 连接不平衡端子和不平衡端子，在不平衡端子和平衡端子之间进行信号的滤波和平衡不平衡转换。 在信号滤波中引入了FBAR滤波器的特性。 FBAR滤波器装置108和平衡不平衡转换器被集成，并且作为紧凑且低成本的单个部件提供，

公开(公告)号：US20070126115A1

公开(公告)日：2007-06-07

申请号：US11593617

申请日：2006-11-07

申请人： Manabu Yanagihara ,  Hiroaki Ueno ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Manabu Yanagihara ,  Hiroaki Ueno ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L23/34

CPC分类号： H05K3/28 ,  H01L21/563 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83951 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H05K1/0209 ,  H05K2201/0179 ,  H05K2201/0323 ,  H05K2201/09045 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A package substrate has a substrate body on which an electronic component is mounted. The substrate body is formed at its top or back surface with a diamond film, a diamond-like carbon film or a carbon film.

摘要翻译： 封装基板具有安装电子部件的基板主体。 基板主体在其顶部或背面形成有金刚石膜，类金刚石碳膜或碳膜。

公开(公告)号：US07217960B2

公开(公告)日：2007-05-15

申请号：US11325340

申请日：2006-01-05

申请人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

发明人： Hiroaki Ueno ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara ,  Yutaka Hirose ,  Masahiro Hikita

IPC分类号： H01L33/00

CPC分类号： H01L29/7786 ,  H01L29/2003

摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.

摘要翻译： 本发明的一个目的是提供一种半导体器件，其可以同时实现HFET的常闭模式和改进的最大值，并进一步实现gm的改善 和栅极漏电流的减小。 为了在栅电极正下方的基板11的操作层12上保持薄势垒层13，主要用于实现常关模式并且还实现高I max， 配置成使得栅极和源极区域之间以及栅极和漏极区域之间的半导体层17可以增加阻挡层13的厚度。 因此与阻挡层的厚度被设计为均匀的FET相比，可以实现常关模式和I 的改善。 介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而改善gm和栅极漏电流的减小 可以实现。

公开(公告)号：US20070096151A1

公开(公告)日：2007-05-03

申请号：US11602267

申请日：2006-11-21

申请人： Manabu Yanagihara ,  Naohiro Tsurumi ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Manabu Yanagihara ,  Naohiro Tsurumi ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L31/00 ,  H01L29/739

CPC分类号： H01L29/66318 ,  H01L29/0817 ,  H01L29/42304 ,  H01L29/7371

摘要： A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitive film is provided on the extrinsic base region using the same semiconductor material as that for the second semiconductor layer. A base electrode is formed on the first semiconductor layer to cover the capacitive film and the extrinsic base region.

摘要翻译： 双极晶体管包括：具有本征基极区域和外部基极区域的第一半导体层; 以及第二半导体层，其具有位于本征基极区上的作为发射极区域或集电极区域的部分。 使用与第二半导体层相同的半导体材料在非本征基极区域上提供电容膜。 在第一半导体层上形成基极以覆盖电容膜和外部基极区。

公开(公告)号：US20070064147A1

公开(公告)日：2007-03-22

申请号：US11520977

申请日：2006-09-14

申请人： Tetsujiro Kondo ,  Yasushi Tatehira ,  Ichiro Katagiri ,  Tsuyoshi Tanaka

发明人： Tetsujiro Kondo ,  Yasushi Tatehira ,  Ichiro Katagiri ,  Tsuyoshi Tanaka

IPC分类号： H04N9/12 ,  H04N5/44

CPC分类号： H04N9/12 ,  H04N5/4403 ,  H04N21/4122 ,  H04N21/42206 ,  H04N21/4221 ,  H04N21/42218 ,  H04N21/485

摘要： A multi-screen television receiver remote control system includes a multi-screen television receiver including a plurality of television receivers, and a remote controller for controlling the multi-screen television receiver. In the multi-screen television receiver remote control system, the remote controller includes a determining section, a manipulating section, a remote control command generating section, and a transmitting section. The multi-screen television receiver includes a receiving section, a recognizing section, and an executing section.

摘要翻译： 多屏幕电视接收机遥控系统包括具有多个电视接收机的多屏幕电视接收机和用于控制多屏幕电视接收机的遥控器。 在多画面电视接收机遥控系统中，遥控器包括判定部，操纵部，遥控指令生成部以及发送部。 多画面电视接收机包括接收部分，识别部分和执行部分。