公开(公告)号：US20190371579A1

公开(公告)日：2019-12-05

申请号：US16538637

申请日：2019-08-12

Applicant: Lam Research Corporation

Inventor： Daniel Arthur Brown ,  John Patrick Holland ,  Michael C. Kellogg ,  James E. Tappan ,  Jerrel K. Antolik ,  Ian Kenworthy ,  Theo Panagopoulos ,  Zhigang Chen

IPC: H01J37/32

Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

公开(公告)号：US10283330B2

公开(公告)日：2019-05-07

申请号：US15636519

申请日：2017-06-28

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

公开(公告)号：US20190057839A1

公开(公告)日：2019-02-21

申请号：US16165950

申请日：2018-10-19

Applicant: Lam Research Corporation

Inventor： Michael C. Kellogg ,  Alexei Marakhtanov ,  John Patrick Holland ,  Zhigang Chen ,  Felix Kozakevich ,  Kenneth Lucchesi

IPC: H01J37/32 ,  H01J37/147

Abstract: Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

公开(公告)号：US20180323044A1

公开(公告)日：2018-11-08

申请号：US16039229

申请日：2018-07-18

Applicant: Lam Research Corporation

Inventor： Daniel Arthur Brown ,  John Patrick Holland ,  Michael C. Kellogg ,  James E. Tappan ,  Jerrel K. Antolik ,  Ian Kenworthy ,  Theo Panagopoulos ,  Zhigang Chen

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32651 ,  H01J37/32724

Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

公开(公告)号：US10037869B2

公开(公告)日：2018-07-31

申请号：US14880088

申请日：2015-10-09

Applicant: Lam Research Corporation

Inventor： Daniel A. Brown ,  Michael C. Kellogg ,  Leonard J. Sharpless ,  Allan K. Ronne ,  James E. Tappan

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32513 ,  H01J37/32816 ,  H01J37/32834

Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

公开(公告)号：US20160108523A1

公开(公告)日：2016-04-21

申请号：US14884575

申请日：2015-10-15

Applicant: Lam Research Corporation

Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John E. Daugherty

IPC: C23C16/455 ,  B24B37/04 ,  C23C16/04

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract translation: 提供一种用于安装用于半导体处理装置的气体输送系统的气体供应部件的气体输送基板。 衬底可以包括多个层，其主表面结合在一起，形成具有用于在第一，第二，第三和第四气体供应部件的外表面上接收和安装的开口的层压板。 衬底可以包括延伸穿过内部主表面的第一气体通道，其至少部分地与延伸穿过不同内部主表面的第二气体通道重叠。 衬底可以包括第一气体管道，其包括将第一气体供应部件连接到第二气体供应部件的第一气体通道，以及包括将第三气体供应部件连接到第四气体供应部件的第二通道的第二气体管道。 还公开了用于制造气体输送基板的各种技术。

公开(公告)号：US20160050781A1

公开(公告)日：2016-02-18

申请号：US14923560

申请日：2015-10-27

Applicant: Lam Research Corporation

Inventor： Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

IPC: H05K5/02 ,  H01B5/04 ,  H01L21/687 ,  H01J37/32

CPC classification number: H05K5/0247 ,  C23C16/4585 ,  H01B5/04 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32733 ,  H01L21/68735

Abstract: A movable ground ring of a movable substrate support assembly that includes a step configured to support a consumable isolation ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly.

Abstract translation: 可动基板支撑组件的可移动接地环，其包括被配置为支撑可消耗隔离环的台阶。 消耗性隔离环被构造成将可移动接地环与可移动衬底支撑组件的介质环电隔离。

公开(公告)号：US20150047785A1

公开(公告)日：2015-02-19

申请号：US13965796

申请日：2013-08-13

Applicant: Lam Research Corporation

Inventor： Michael C. Kellogg ,  Daniel A. Brown ,  Leonard J. Sharpless ,  Allan K. Ronne

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J37/32816 ,  H01J37/32834

Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

Abstract translation: 等离子体处理装置可以包括等离子体处理室，等离子体电极组件，晶片台，等离子体产生气体入口，多个真空端口，至少一个真空泵和多端口阀组件。 多口阀组件可以包括位于等离子体处理室中的可移动密封板。 可移动密封板可以包括横向端口密封表面，该横向端口密封表面的形状和尺寸在闭合状态下与多个真空端口完全重叠，以在部分打开的状态下部分地重叠多个真空端口，并且避免了 处于打开状态的多个真空口。 多端口阀组件可以包括耦合到可移动密封板的横向致动器和联接到可移动密封板的密封致动器。

公开(公告)号：US08796153B2

公开(公告)日：2014-08-05

申请号：US13793278

申请日：2013-03-11

Applicant: Lam Research Corporation

Inventor： Roger Patrick ,  Gregory R. Bettencourt ,  Michael C. Kellogg

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/45565 ,  C23C16/4557 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  Y10S403/12 ,  Y10S403/13

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

Abstract translation: 用于等离子体反应室的电极组件，用于半导体衬底处理。 该组件包括上部喷头电极，其通过一系列间隔开的凸轮锁定机械地附接到背板。 保护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从电极的上表面延伸的锁定销。