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    Bimorph MEMS devices
    32.
    发明申请
    Bimorph MEMS devices 失效
    双压电晶片MEMS器件

    公开(公告)号：US20050104478A1

    公开(公告)日：2005-05-19

    申请号：US11017498

    申请日：2004-12-20

    申请人： Baomin Xu ,  William Wong

    发明人： Baomin Xu ,  William Wong

    IPC分类号： H01L41/09 ,  H01L41/24 ,  H02N2/04 ,  H01L41/08

    CPC分类号： B81B3/0024 ,  B81B2201/032 ,  H01L41/094 ,  H01L41/22 ,  H01L41/313 ,  H01L41/314 ,  H01L41/337 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49156

    摘要： A micro-electromechanical dimensioned bimorph structure includes a first element layer structure, and a second element layer structure. The element layer structures are provided in various combinations, including piezoelectric/piezoelectric, antiferroelectric/antiferroelectric or antiferroelectric/piezoelectric. The layer thickness of the element structure is less than 100 μm. A bonding layer bonds the first element structure directly to the second element structure and the bonding layer thickness is less than 10 μm. The bimorph structure can be made in various forms including a cantilever or a diaphragm. Microfluidic devices using the bimorph structures may also be constructed.

    摘要翻译： 微机电尺寸双压电晶片结构包括第一元件层结构和第二元件层结构。 元件层结构以各种组合提供，包括压电/压电，反铁电/反铁电或反铁电/压电。 元件结构的层厚小于100μm。 结合层将第一元件结构直接结合到第二元件结构，并且结合层厚度小于10μm。 双压电晶片结构可以以各种形式制成，包括悬臂或隔膜。 也可以构造使用双压电晶片结构的微流体装置。

    N-type silicon solar cell with contact/protection structures
    33.
    发明授权
    N-type silicon solar cell with contact/protection structures 有权
    具有接触/保护结构的N型硅太阳能电池

    公开(公告)号：US08962424B2

    公开(公告)日：2015-02-24

    申请号：US13040098

    申请日：2011-03-03

    申请人： Baomin Xu

    发明人： Baomin Xu

    IPC分类号： H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/0216

    CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/02245 ,  H01L31/068 ,  Y02E10/547

    摘要： A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.

    摘要翻译： 通过在发射极层上形成间隔开的接触/保护结构，在具有p +发射极层的n型半导体衬底上形成太阳能电池，在衬底的上表面上沉积覆盖电介质钝化层，利用激光烧蚀形成接触开口 通过暴露对应的接触/保护结构的电介质层，然后在电介质层的上表面上形成金属网格线，所述网格线通过延伸穿过相关联的接触开口的金属通孔结构电连接到接触结构。 接触/保护结构在接触开口形成过程中（即防止由所需的高能量激光脉冲引起的p +发射极层的损坏）同时作为防止基板损伤的保护，并且还用作促进最佳接触的可选的硅化物源 在金属网格线和p +发射极层之间。

    Method of forming micromachined fluid ejectors using piezoelectric actuation
    34.
    发明授权
    Method of forming micromachined fluid ejectors using piezoelectric actuation 有权
    使用压电驱动形成微机械流体喷射器的方法

    公开(公告)号：US08359748B2

    公开(公告)日：2013-01-29

    申请号：US12273573

    申请日：2008-11-19

    申请人： Baomin Xu ,  Steven A. Buhler ,  Stephen D. White ,  Scott Jong Ho Limb

    发明人： Baomin Xu ,  Steven A. Buhler ,  Stephen D. White ,  Scott Jong Ho Limb

    IPC分类号： B21D53/76 ,  H04R17/00

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1643 ,  B41J2/1646 ,  B41J2002/14475 ,  Y10T29/42 ,  Y10T29/49401

    摘要： A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area. The thin layer structure and the recess portion of the nozzle plate define a depth of a fluid cavity defined by the thin layer structure, the recess portion of the nozzle plate and the sidewalls of the silicon wafer.

    摘要翻译： 形成流体喷射器的方法包括在硅晶片的第一侧上将凹槽形成凹槽，并用牺牲材料填充凹槽。 在覆盖填充的凹槽的硅晶片的第一侧上沉积薄层结构。 然后，薄膜压电体被结合或沉积到薄层结构上，并且在该薄层结构中形成一个露出至少一部分牺牲材料的孔。 牺牲材料从凹槽中移除，其中凹槽中的薄层中的孔与除去牺牲材料的孔形成流体入口。 硅晶片的开口区域形成在硅晶片的第二侧上。 然后形成在凹部内具有凹部和孔的喷嘴板。 喷嘴板附接到硅晶片的第二侧，凹部位于开放区域内。 喷嘴板的薄层结构和凹部限定由薄层结构，喷嘴板的凹部和硅晶片的侧壁限定的流体腔的深度。

    N-Type Silicon Solar Cell With Contact/Protection Structures
    35.
    发明申请
    N-Type Silicon Solar Cell With Contact/Protection Structures 有权
    带接触/保护结构的N型硅太阳能电池

    公开(公告)号：US20120222735A1

    公开(公告)日：2012-09-06

    申请号：US13040098

    申请日：2011-03-03

    申请人： Baomin Xu

    发明人： Baomin Xu

    IPC分类号： H01L31/0216 ,  H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/02245 ,  H01L31/068 ,  Y02E10/547

    摘要： A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.

    摘要翻译： 通过在发射极层上形成间隔开的接触/保护结构，在具有p +发射极层的n型半导体衬底上形成太阳能电池，在衬底的上表面上沉积覆盖电介质钝化层，利用激光烧蚀形成接触开口 通过暴露对应的接触/保护结构的电介质层，然后在电介质层的上表面上形成金属网格线，所述网格线通过延伸穿过相关联的接触开口的金属通孔结构电连接到接触结构。 接触/保护结构在接触开口形成过程中（即防止由所需的高能量激光脉冲引起的p +发射极层的损坏）同时作为防止基板损伤的保护，并且还用作促进最佳接触的可选的硅化物源 在金属网格线和p +发射极层之间。

    Interdigitated Back Contact Silicon Solar Cells With Separating Grooves
    37.
    发明申请
    Interdigitated Back Contact Silicon Solar Cells With Separating Grooves 有权
    带有分离沟槽的硅片太阳能电池

    公开(公告)号：US20110070681A1

    公开(公告)日：2011-03-24

    申请号：US12954234

    申请日：2010-11-24

    申请人： Kenta Nakayashiki ,  Baomin Xu

    发明人： Kenta Nakayashiki ,  Baomin Xu

    IPC分类号： H01L31/0352

    CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.

    摘要翻译： 交叉反向接触（IBC）太阳能电池通过在衬底上沉积具有第一掺杂剂材料（例如，硼）的间隔开的平行焊盘来产生，加热衬底以将第一掺杂剂扩散到相应的第一（例如p +）扩散 并且在第一扩散区上形成扩散阻挡层（例如，硼硅酸盐玻璃），然后将衬底设置在含有第二掺杂剂（例如磷）的气氛中，使得第二掺杂剂通过衬底的暴露表面区域扩散形成 第一（p +）扩散区之间的第二（例如，n +）扩散区（扩散阻挡层防止第二掺杂剂扩散到第一（p +）扩散区）。 然后去除相邻的第一（p +）和第二（n +）扩散区之间的每个界面的衬底材料（例如，使用激光烧蚀），使得在相邻扩散区之间形成延伸到衬底中比扩散掺杂剂更深的细长槽 地区。