公开(公告)号：US20160216465A1

公开(公告)日：2016-07-28

申请号：US15091439

申请日：2016-04-05

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02B6/42 ,  G02B6/26 ,  G02B6/30

CPC classification number: G02B6/4251 ,  G02B6/12 ,  G02B6/25 ,  G02B6/255 ,  G02B6/262 ,  G02B6/305 ,  G02B6/424

Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.

Abstract translation: 公开了在光纤和芯片的光学元件之间提供密封的光学连接的方法以及使用这种方法制造的光子集成芯片。

公开(公告)号：US09356096B2

公开(公告)日：2016-05-31

申请号：US14803662

申请日：2015-07-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Song Guo ,  Yushi Hu ,  Roy Meade ,  Sanh D. Tang ,  Michael P. Violette ,  David H. Wells

IPC: H01L29/04 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L29/32

CPC classification number: H01L29/0649 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L29/04 ,  H01L29/32

Abstract: Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material.

公开(公告)号：US09318321B2

公开(公告)日：2016-04-19

申请号：US14588659

申请日：2015-01-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade

IPC: H01L21/336 ,  H01L21/02 ,  H01L29/423 ,  H01L29/51 ,  H01L29/792 ,  H01L27/115 ,  H01L29/78

CPC classification number: H01L27/11568 ,  H01L21/02112 ,  H01L21/02318 ,  H01L21/28176 ,  H01L21/326 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/78 ,  H01L29/7883 ,  H01L29/792

Abstract: Methods for fabricating memory devices having charged species. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material.

Abstract translation: 用于制造具有带电物种的存储器件的方法。 在一种这样的方法中，与半导体相邻地形成电介质材料。 将电荷物质引入电介质材料中，其中带电物质具有大于约0.5eV至约3.0eV范围内的能量势垒。 控制栅极与电介质材料相邻地形成。

公开(公告)号：US20160054520A1

公开(公告)日：2016-02-25

申请号：US14467531

申请日：2014-08-25

Applicant: Micron Technology, Inc. ,  Massachusetts Institute of Technology

Inventor： Roy Meade ,  Jason Orcutt ,  Milos Popovic ,  Jeffrey Shainline ,  Zvi Sternberg ,  Vladimir Stojanovic ,  Ofer Tehar-Zahav

IPC: G02B6/12 ,  G02B6/122

CPC classification number: G02B6/1228 ,  G02B6/12004 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12142 ,  G02F1/025 ,  G02F2201/06 ,  G02F2202/104

Abstract: An integrated structure and method of formation provide a lower level waveguide having a core of a first material and a higher level waveguide having a core of a second material and a coupling region for coupling the two waveguides together. The different core materials provided different coupled waveguides having different light loss characteristics.

Abstract translation: 集成结构和形成方法提供了具有第一材料的芯和具有第二材料的芯的较高级波导的低级波导和用于将两个波导耦合在一起的耦合区域。 不同的芯材料提供了具有不同光损失特性的不同耦合波导。

公开(公告)号：US09184191B2

公开(公告)日：2015-11-10

申请号：US14055990

申请日：2013-10-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade

IPC: H01L31/0232 ,  H01L31/107 ,  H01L21/00 ,  H01L21/76 ,  H01L27/144 ,  H01L31/18 ,  H01L21/64 ,  H01L27/146

CPC classification number: H01L27/1446 ,  G02B6/12004 ,  H01L21/64 ,  H01L27/14625 ,  H01L31/103 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming a photonic device and resulting structure are described in which the photonic device is epitaxially grown over a substrate surface vertically, and laterally over trench isolation regions formed in the substrate surface.

Abstract translation: 描述了形成光子器件和所得结构的方法，其中光子器件在衬底表面上垂直地外延生长，并横向地形成在衬底表面中形成的沟槽隔离区域上。

公开(公告)号：US20150177470A1

公开(公告)日：2015-06-25

申请号：US14632434

申请日：2015-02-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade

IPC: G02B6/42 ,  H01L31/0232 ,  H01L31/101

CPC classification number: G02B6/4295 ,  G02B6/4203 ,  G02B6/4289 ,  G02B6/4291 ,  H01L31/02327 ,  H01L31/101

Abstract: Described embodiments include optical connections for electronic-photonic devices, such as optical waveguides and photonic detectors for receiving optical waves from the optical waveguides and directing the optical waves to a common point. Methods of fabricating such connections are also described.

Abstract translation: 描述的实施例包括用于电子光子器件的光学连接，例如用于从光波导接收光波并将光波引导到公共点的光波导和光子检测器。 还描述了制造这种连接的方法。

公开(公告)号：US08861978B2

公开(公告)日：2014-10-14

申请号：US14220316

申请日：2014-03-20

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H04B10/50 ,  H04Q11/00 ,  H04J14/02

CPC classification number: H04Q11/0005 ,  H04B10/506 ,  H04J14/02

Abstract: A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit.

Abstract translation: 公开了一种波分复用（WDM）系统，其通过使用每个光通信信道中的至少两个载波和分别与每个光调制器内的载波相关联的至少两个谐振调制器电路来适应光调制器的谐振频率的偏移。 当至少两个谐振光调制器电路的谐振频率发生偏移时，第一谐振调制器电路与第一载波谐振，而第二谐振调制器电路与第二载波谐振。 开关电路控制哪个载波被其相应的谐振调制器电路调制。

公开(公告)号：US20140185983A1

公开(公告)日：2014-07-03

申请号：US13732557

申请日：2013-01-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/32

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract translation: 用于将光纤与光子器件光学对准的结构及其制造方法。 该结构将光纤与光子器件光学对准，使用透镜之间的两个可由致动器头移动的透镜。 透镜可以通过与致动器头相关联的相应的动力源移动。

公开(公告)号：US20140175596A1

公开(公告)日：2014-06-26

申请号：US14151083

申请日：2014-01-09

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

公开(公告)号：US11536915B2

公开(公告)日：2022-12-27

申请号：US17153482

申请日：2021-01-20

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02B6/42 ,  G02B6/30 ,  G02B6/12 ,  G02B6/25 ,  G02B6/255 ,  G02B6/26

Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.