公开(公告)号：US08526476B2

公开(公告)日：2013-09-03

申请号：US12598747

申请日：2008-04-24

申请人： Karl Engl ,  Lutz Hoeppel ,  Christoph Eichler ,  Matthias Sabathil ,  Andreas Weimar

发明人： Karl Engl ,  Lutz Hoeppel ,  Christoph Eichler ,  Matthias Sabathil ,  Andreas Weimar

IPC分类号： H01S5/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/387 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18391 ,  H01S5/3095 ,  H01L2924/00

摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.

摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。

公开(公告)号：US08436394B2

公开(公告)日：2013-05-07

申请号：US13124145

申请日：2009-10-16

申请人： Peter Brick ,  Matthias Sabathil ,  Hagen Luckner

发明人： Peter Brick ,  Matthias Sabathil ,  Hagen Luckner

IPC分类号： H01L33/62

CPC分类号： H01L33/387 ,  F21S41/155 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

摘要： A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

摘要翻译： 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下，通过沿着主要平面的接触区域的面积密度的不均匀分布，在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。

公开(公告)号：US08841685B2

公开(公告)日：2014-09-23

申请号：US13056589

申请日：2009-06-29

申请人： Lutz Hoeppel ,  Matthias Sabathil

发明人： Lutz Hoeppel ,  Matthias Sabathil

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40

CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).

摘要翻译： 给出了包括半导体层序列（2）的光电子半导体芯片（1）的描述，该半导体层序列（2）具有用于产生电磁辐射的有源区（4），并且包括结构化电流扩散层（6），其包含透明导电 并且布置在半导体层序列（2）的主区域（12）上，其中电流扩展层（6）覆盖主区域（12）的至少30％且至多60％。

公开(公告)号：US08354682B2

公开(公告)日：2013-01-15

申请号：US11891783

申请日：2007-08-13

申请人： Franz Eberhard ,  Stefan Grötsch ,  Norbert Linder ,  Jürgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

发明人： Franz Eberhard ,  Stefan Grötsch ,  Norbert Linder ,  Jürgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

摘要翻译： 一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2） （A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程 或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

公开(公告)号：US20120133908A1

公开(公告)日：2012-05-31

申请号：US13378308

申请日：2010-06-15

申请人： Stefan Grötsch ,  Simon Kocur ,  Matthias Sabathil

发明人： Stefan Grötsch ,  Simon Kocur ,  Matthias Sabathil

IPC分类号： G03B21/26 ,  G03B21/14

CPC分类号： H04N9/3111 ,  G03B21/2013 ,  G03B21/204 ,  G03B33/08 ,  H01L25/0756 ,  H01L27/15 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H04N9/3164 ,  H01L2924/00

摘要： An optical projection apparatus includes a first light source, a second light source, and an imaging element, which is illuminated by the first light source and the second light source during operation. The light source includes a light-emitting diode chip that emits red light during operation. The second light source includes a first light-emitting diode chip, which emits green light during operation. A second light-emitting diode chip emits blue light during operation. The second light-emitting diode chip is arranged on the first light-emitting diode chip at a radiation exit surface of the first light-emitting diode chip. Electromagnetic radiation generated in the first light-emitting diode chip during operation passes through the second light-emitting diode chip.

摘要翻译： 光学投影设备包括第一光源，第二光源和成像元件，其在操作期间由第一光源和第二光源照射。 光源包括在操作期间发出红光的发光二极管芯片。 第二光源包括在操作期间发出绿光的第一发光二极管芯片。 第二个发光二极管芯片在运行期间发出蓝光。 第二发光二极管芯片被布置在第一发光二极管芯片的第一发光二极管芯片的辐射出射表面处。 在操作中在第一发光二极管芯片中产生的电磁辐射通过第二发光二极管芯片。

公开(公告)号：US20110215369A1

公开(公告)日：2011-09-08

申请号：US13124145

申请日：2009-10-16

申请人： Peter Brick ,  Matthias Sabathil ,  Hagen Luckner

发明人： Peter Brick ,  Matthias Sabathil ,  Hagen Luckner

IPC分类号： H01L33/62

CPC分类号： H01L33/387 ,  F21S41/155 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

摘要： A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

摘要翻译： 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下，通过沿着主要平面的接触区域的面积密度的不均匀分布，在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。

公开(公告)号：US20080035944A1

公开(公告)日：2008-02-14

申请号：US11891783

申请日：2007-08-13

申请人： Franz Eberhard ,  Stefan Grotsch ,  Norbert Linder ,  Jurgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

发明人： Franz Eberhard ,  Stefan Grotsch ,  Norbert Linder ,  Jurgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

摘要翻译： 一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2） （A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程 或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

公开(公告)号：US08969900B2

公开(公告)日：2015-03-03

申请号：US13883346

申请日：2011-11-02

申请人： Matthias Sabathil ,  Alexander Linkov ,  Christopher Kölper ,  Martin Straβburg ,  Norwin von Malm

发明人： Matthias Sabathil ,  Alexander Linkov ,  Christopher Kölper ,  Martin Straβburg ,  Norwin von Malm

IPC分类号： H01L29/22 ,  H01L33/02 ,  H01L33/20 ,  H01L33/50 ,  H01L33/08 ,  H01L33/24 ,  B82Y40/00

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/42 ,  H01L33/501 ,  H01L33/505 ,  H01L33/508 ,  H01L2933/0041 ,  H01L2933/0083

摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

摘要翻译： 光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分 由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。

公开(公告)号：US08530923B2

公开(公告)日：2013-09-10

申请号：US12922830

申请日：2009-04-28

申请人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

发明人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

IPC分类号： H01L33/38

CPC分类号： H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

摘要翻译： 描述了具有半导体层序列（2）的发光二极管芯片（1），其经由电流扩展层（3）由触点（5）电接触。 触点（5）覆盖半导体层序列（2）的表面的约1％-8％。 触点（5）例如由单独的接触点（51）组成，它们布置在栅格常数为12μm的规则网格（52）的节点处。 电流扩展层（3）包含例如氧化铟锡，氧化铟锌或氧化锌，其厚度在15nm至60nm的范围内。

公开(公告)号：US08502267B2

公开(公告)日：2013-08-06

申请号：US13142885

申请日：2010-01-05

申请人： Alexander Behres ,  Matthias Sabathil

发明人： Alexander Behres ,  Matthias Sabathil

IPC分类号： H01L33/00

CPC分类号： H01L33/0062 ,  H01L33/0075 ,  H01L33/30 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/32341 ,  H01L2924/00

摘要： An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.

摘要翻译： 光电子半导体部件包括发射辐射的有源层，由包覆层包围的有源层，其中包层和/或有源层包括含铟磷化合物半导体材料，并且磷化物半导体材料包含在 元素Bi或Sb中的至少一种作为主要组V的附加元素。