Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control informastion needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
A first integrated circuit is coupled to a first connector. A second connector is coupled to the first connector through multiple conductors, in which alternating pairs of conductors are reversed. A second integrated circuit is coupled to the second connector through a second group of conductors. The first integrated circuit includes multiple differential drivers and the second integrated circuit includes multiple differential receivers. The inductive coupling coefficient of the first device is modified to be substantially the same as the inductive coupling coefficient of the second device.
Abstract:
A current controller for a multi-level current mode driver. The current controller includes a multi-level voltage reference and at least one source calibration signal. A comparator is coupled by a coupling network to the multi-level voltage reference and the at least one source calibration signal. A selected voltage is applied from the multi-level voltage reference and a selected source calibration signal is applied from the at least one source calibration signal to the comparator.
Abstract:
A synchronous integrated circuit memory device including an array of memory cells. The memory device includes a clock receiver to receive an external clock signal, and a plurality of sense amplifiers, coupled to the array of memory cells, to sense data. A first portion of the data is output from the memory device in response to a first operation code bit specifying a read operation. In addition, the memory device includes a first input receiver to sample the first operation code bit in response to a first transition of the external clock signal. Furthermore, the memory device includes a second input receiver to sample a second operation code bit in response to the first transition of the external clock signal. The second operation code bit indicates whether precharging the plurality of sense amplifiers occurs automatically after the data has been sensed. Moreover, the memory device includes a plurality of output drivers to output the portion of the data synchronously with respect to the external clock signal.
Abstract:
A synchronous memory device and methods of operation and controlling such a device. The method of controlling the memory device includes providing block size information to the memory device, synchronously with respect to an external clock signal, wherein the block size information defines an amount of data to be output by the memory device in response to a read request. The method further includes issuing a first read request to the memory device, wherein the memory device receives the first read request synchronously with respect to a transition of the external clock signal.
Abstract:
A method of operating a synchronous memory device, wherein the memory device includes a plurality of memory cells and a register for storing an identification value which identifies the memory device on a bus. Block size information is provided to the memory device, wherein the block size information specifies an amount of data to be output onto a bus in response to a read request. The read request is issued to the memory device, and includes identification information, wherein in response to the read request, the memory device determines whether the identification information corresponds to the identification value stored in the register. When the identification information corresponds to the identification value, the memory device outputs an amount of data corresponding to the block size information onto the bus synchronously with respect to at least a first external clock. The memory device may further include a programmable register. An access time value may be provided to the memory device wherein, in response, the memory device stores the access time value in the programmable register. Here, the access time value is representative of a delay to transpire before data is output onto the bus in response to the read request.
Abstract:
A system for use in a computer, the system comprises a memory device and a controller or master to generate a request to provide data. The memory device includes at least one section of memory, having a plurality of memory cells, and a programmable register to store a value which is representative of a number of clock cycles of a first external clock signal to transpire before the memory device outputs data onto the bus in response to the request to provide data. The memory device may further include a plurality of output drivers and a delay lock loop circuitry wherein the delay lock loop circuitry generates a first internal clock signal using the first external clock signal. The plurality of output drivers, in response to the first internal clock signal, output data onto the bus. The plurality of output drivers output data on the bus after the number of clock cycles of the first external clock signal transpire and synchronously with respect to the first external clock signal. The delay lock loop circuitry may also generate the first internal clock signal using the first external clock signal and a second external clock signal.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
A dynamic random access memory (DRAM). The DRAM comprises a first circuit for providing a clock signal and a conductor for coupling the DRAM to a bus. A receiver circuit is coupled to the conductor and the first circuit for latching information received from the conductor in response to detecting each of a rising edge of the clock signal and a falling edge of the clock signal. The receiver circuit may include a first input receiver for latching information in response to the rising edge of the clock signal and a second input receiver for latching information in response to the falling edge of the clock signal.
Abstract:
An apparatus for storing and retrieving data is described. The apparatus includes a circuitry for initiating data transmission, a first memory, a second memory, and a multiline bus for transferring control information, addresses, and the data. The control information includes information for selecting one of the first and second memories without using any separate memory select line. Configuration circuitry is provided for assigning a first identification value to the first memory and a second identification value to the second memory. The configuration circuitry includes a first reset line for coupling the circuitry for initiating data transmission to the first memory, a second reset line for coupling the first memory to the second memory, a first identification register for the first memory, a second identification register for the second memory, circuitry for generating a first reset signal and a second reset signal and for sending the first and second reset signals to the first identification register, circuitry for propagating the first and second reset signals from the first identification register to the second identification register, circuitry for resetting the first and second identification registers in response to the first reset signal, and circuitry for setting the first identification register to the first identification value and the second identification register to the second identification value in response to the second reset signal.