公开(公告)号：US20100188722A1

公开(公告)日：2010-07-29

申请号：US12688247

申请日：2010-01-15

申请人： Masato Yamada ,  Yoshihisa Suzuki

发明人： Masato Yamada ,  Yoshihisa Suzuki

IPC分类号： G02B26/08

CPC分类号： G02B26/101 ,  G01S7/4811 ,  G01S7/4817 ,  G01S17/936

摘要： An attachment lens is arranged in a stage subsequent to a scanning lens. After a laser beam is converged by the scanning lens, the laser beam is converted into a parallel beam by the attachment lens. When the scanning lens is displaced in a direction perpendicular to an optical axis of the laser beam, a traveling direction of the laser beam is bent by a predetermined angle immediately after the laser beam passes through the scanning lens. Then, the traveling direction of the laser beam is further bent by a predetermined angle in the same direction by the passage of the laser beam through the attachment lens. Accordingly, a final swing angle of the laser beam outgoing from an outgoing window is increased by a swing angle imparted by the attachment lens compared with the case where the attachment lens is not arranged. One of lens surfaces of the attachment lens is formed in a toroidal surface, which allows the laser beam to have a long outline in a vertical direction.

摘要翻译： 附着透镜布置在扫描透镜之后的阶段中。 在激光束被扫描透镜会聚之后，激光束被附着透镜转换成平行光束。 当扫描透镜在与激光束的光轴垂直的方向上移位时，激光束的行进方向在激光束通过扫描透镜之后立即弯曲预定角度。 然后，激光束的行进方向通过激光束通过附着透镜而沿相同方向进一步弯曲预定角度。 因此，与未配置附件镜头的情况相比，从出射窗口射出的激光束的最终摆动角度增加了由附着镜头施加的摆动角度。 附着透镜的透镜表面之一形成在环形表面中，这允许激光束在垂直方向上具有长轮廓。

公开(公告)号：US07570346B2

公开(公告)日：2009-08-04

申请号：US11377449

申请日：2006-03-17

申请人： Atsushi Yamaguchi ,  Shinji Kobayashi ,  Masato Yamada ,  Shuichi Ichiura

发明人： Atsushi Yamaguchi ,  Shinji Kobayashi ,  Masato Yamada ,  Shuichi Ichiura

IPC分类号： G01C3/08

CPC分类号： G01S17/936 ,  G01C3/08 ,  G01S17/46

摘要： A scan trajectory of a laser beam is controlled based on external signals each related to a driving direction and a driving speed, a result obtained by detection of an obstacle, and signals related to distances to the obstacle. For example, at the time of a right turn, a scan trajectory for increasing scan frequency on a portion shifted in a right-turn direction from a center axis in a driving direction is set. At the time of high-speed driving, a scan trajectory for increasing scan frequency on a center portion in the driving direction is set. When the obstacle is detected at a position corresponding to a distance shorter than a threshold distance, a scan trajectory for increasing scan frequency in the vicinity of the obstacle is set. Detection and monitoring are performed at the time of: changing of the driving direction, the high-speed driving, and the detection of the obstacle.

摘要翻译： 基于与驱动方向和驱动速度相关的外部信号，通过检测障碍物获得的结果以及与障碍物的距离相关的信号来控制激光束的扫描轨迹。 例如，在右转时，设定用于增加扫描频率的扫描轨迹，该扫描轨迹用于沿着驱动方向从中心轴沿右转方向移动的部分增加扫描频率。 在高速驱动时，设定用于增加驱动方向上的中心部分的扫描频率的扫描轨迹。 当在对应于比阈值距离短的距离的位置处检测到障碍物时，设置用于增加障碍物附近的扫描频率的扫描轨迹。 在改变驾驶方向，高速驾驶和障碍物的检测时进行检测和监视。

公开(公告)号：US07511314B2

公开(公告)日：2009-03-31

申请号：US10575853

申请日：2004-10-15

申请人： Masato Yamada ,  Masayuki Shinohara ,  Masanobu Takahashi ,  Keizou Adomi ,  Jun Ikeda

发明人： Masato Yamada ,  Masayuki Shinohara ,  Masanobu Takahashi ,  Keizou Adomi ,  Jun Ikeda

IPC分类号： H01L29/26

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/405 ,  Y10S438/936

摘要： Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.

摘要翻译： 公开了一种发光器件（100），其具有由III-V族化合物半导体和厚度不小于40的透明厚膜半导体层（90）组成的发光层部分（24） 形成在发光层部分（24）的至少一个主表面侧上并且由具有比从其发射波长的峰值波长的光子能量当量的能隙大的III-V族化合物半导体构成的母体 发光层部分（24）。 透明厚膜半导体层（90）具有作为化学蚀刻表面的侧表面部分（90S）。 透明厚膜半导体层（90）的掺杂浓度为5×10 16 / cm 3以上2×10 18 / cm 3以下。 发光装置可以具有透明的厚膜半导体层，同时从侧面部分的光取出效率显着提高。

公开(公告)号：US20070145405A1

公开(公告)日：2007-06-28

申请号：US10575853

申请日：2004-10-15

申请人： Masato Yamada ,  Masayuki Shinohara ,  Masanobu Takahashi ,  Keizou Adomi ,  Jun Ikeda

发明人： Masato Yamada ,  Masayuki Shinohara ,  Masanobu Takahashi ,  Keizou Adomi ,  Jun Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/405 ,  Y10S438/936

摘要： Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.

摘要翻译： 公开了一种发光器件（100），其具有由III-V族化合物半导体和厚度不小于40的透明厚膜半导体层（90）组成的发光层部分（24） 形成在发光层部分（24）的至少一个主表面侧上并且由具有比从其来源的发射光束的峰值波长的光子能量当量的能隙大的III-V族化合物半导体构成的母体 发光层部分（24）。 透明厚膜半导体层（90）具有作为化学蚀刻表面的侧面部（90S）。 透明厚膜半导体层（90）的掺杂浓度为5×10 16 / cm 3以上，2×10 18 / / cm 3。 发光装置可以具有透明的厚膜半导体层，同时从侧面部分的光取出效率显着提高。

公开(公告)号：US20060244978A1

公开(公告)日：2006-11-02

申请号：US11410049

申请日：2006-04-25

申请人： Masato Yamada ,  Shuichi Ichiura

发明人： Masato Yamada ,  Shuichi Ichiura

IPC分类号： G01B11/14

CPC分类号： G01S17/936 ,  G01S7/481 ,  G01S7/4972

摘要： An irradiation pattern of a laser beam within a target region is controlled based on external signals each related to a driving direction and a driving speed, a result obtained by detection of an obstacle, and signals related to distances to the obstacle. For example, at the time of a right turn, an irradiation pattern for increasing irradiation frequency on a portion shifted in a right-turn direction from a center axis in a driving direction is set. At the time of high-speed driving, an irradiation pattern for increasing irradiation frequency on a center portion of a forward region in the driving direction is set. When the obstacle is detected and a distance to the obstacle is shorter than a threshold distance, an irradiation pattern for increasing irradiation frequency in the vicinity of the obstacle is set. Detection of the obstacle and monitoring of a state thereof are adequately and smoothly performed at the time of changing of the driving direction, the time of high-speed driving, and the time of detection of the obstacle.

摘要翻译： 基于与驱动方向和驱动速度相关的外部信号，通过检测障碍物获得的结果以及与障碍物的距离有关的信号来控制目标区域内的激光束的照射图案。 例如，在右转时，设定用于增加沿着驱动方向的中心轴在右转方向上偏移的部分上的照射频率的照射图案。 在高速驱动时，设定用于在驱动方向的前方区域的中心部分增加照射频率的照射图案。 当检测到障碍物并且与障碍物的距离小于阈值距离时，设置用于增加障碍物附近的照射频率的照射模式。 在改变行驶方向，高速行驶时间和障碍物的检测时间时，对障碍物的检测和状态的监视能够充分而平稳地进行。

公开(公告)号：US07041529B2

公开(公告)日：2006-05-09

申请号：US10690453

申请日：2003-10-22

申请人： Masato Yamada ,  Jun-ya Ishizaki ,  Nobuhiko Noto ,  Kazunori Hagimoto ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

发明人： Masato Yamada ,  Jun-ya Ishizaki ,  Nobuhiko Noto ,  Kazunori Hagimoto ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L33/42 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0016

摘要： In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

摘要翻译： 在发光装置中，将由化合物半导体构成的发光层部分接合在透明导电半导体衬底的一个主表面上，同时将由导电氧化物构成的衬底接合导电氧化物层放置在其间。 在发光层部分和与衬底结合的导电氧化物层之间，具有用于与衬底结合导电氧化物层降低结电阻以与衬底结合导电氧化物层接触的接触层。 这是成功地提供了可以低成本生产的低发光装置，具有低串联电阻，并且尽管具有厚的电流扩展层，但是可以获得足够的发光效率。

公开(公告)号：US07026651B2

公开(公告)日：2006-04-11

申请号：US10629737

申请日：2003-07-30

申请人： Masato Yamada ,  Masanobu Takahashi

发明人： Masato Yamada ,  Masanobu Takahashi

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L25/0753 ,  F21K9/232 ,  F21S6/001 ,  F21S8/04 ,  F21S10/04 ,  F21W2121/00 ,  F21W2131/109 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/08 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2933/0091 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the conventional light sources, and a lighting apparatus using this device is provided. The light emitting device 10 is configured so that an active layer in a double hetero light emitting layer portion composed of compound semiconductors comprises a plurality of emission unit layers differing from each other in band gap energy, and so as to emit a simulatively synthesized light having a pseudo-continuous spectrum ensuring an emission intensity of 5% or more of a peak intensity over a wavelength region of 50 nm or more.

摘要翻译： 提供一种能够以低成本容易地产生覆盖宽波长区域的伪连续光谱并且完全解决常规光源中存在的各种问题的发光器件以及使用该器件的照明装置。 发光器件10被配置为使得由化合物半导体构成的双异质发光层部分中的有源层包括在带隙能量上彼此不同的多个发射单元层，并且发射模拟合成的光，其具有 确保在50nm以上的波长区域的峰值强度的发光强度为5％以上的伪连续光谱。

公开(公告)号：US20050285127A1

公开(公告)日：2005-12-29

申请号：US10523636

申请日：2003-08-06

申请人： Nobuhiko Noto ,  Masato Yamada ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

发明人： Nobuhiko Noto ,  Masato Yamada ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

IPC分类号： H01L33/10 ,  H01L33/30 ,  H01L33/36 ,  H01L29/20 ,  H01L21/00

CPC分类号： H01L33/42 ,  H01L33/30

摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.

摘要翻译： 发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。 发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以分别与ITO透明电极层接触。 接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。 这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使 接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

公开(公告)号：US06618424B1

公开(公告)日：2003-09-09

申请号：US09533975

申请日：2000-03-23

申请人： Masato Yamada ,  Yoichi Tsuchiya

发明人： Masato Yamada ,  Yoichi Tsuchiya

IPC分类号： H01S308

CPC分类号： G11B7/1378 ,  G11B7/1353 ,  G11B7/1398 ,  H01S5/005

摘要： An optical pickup device includes a semiconductor laser, a collimater lens, an optical member, a halfmirror, an objective lens, a collecting lens and a photodetector. The collimator lens collimates a laser beam from the semiconductor laser. The optical member diffracts the laser beam which has been collimated by the collimator lens outward along the direction of the shorter diameter of the laser beam, and emits a laser beam having a prescribed aspect ratio. The halfmirror passes the laser beam from optical member and reflects one half the light reflected from a signal recording surface of an optical disk to the photodetector. The objective lens focuses the laser beam on the signal recording surface. The collective lens collects the laser beam from the halfmirror. The photodetector detects the laser beam. Therefore, the optical pickup device is capable of converting the aspect ratio of the laser beam emitted from the semiconductor laser, and hence it becomes possible to irradiate the optical disk with the laser beam having sufficient power for recording a signal.

摘要翻译： 光拾取装置包括半导体激光器，准直透镜，光学部件，半透镜，物镜，聚光透镜和光电检测器。 准直透镜准直来自半导体激光器的激光束。 光学构件沿着激光束的较短直径的方向将准直透镜向前准直的激光束衍射，并发射具有规定的纵横比的激光束。 半透镜从光学构件通过激光束并将从光盘的信号记录表面反射的光的一半反射到光电检测器。 物镜将激光束聚焦在信号记录表面上。 集体透镜从半透镜收集激光束。 光电检测器检测激光束。 因此，光学拾取装置能够转换从半导体激光器发射的激光束的纵横比，因此可以用具有足够的用于记录信号的电力的激光束照射光盘。

公开(公告)号：US06552990B1

公开(公告)日：2003-04-22

申请号：US09180301

申请日：1998-11-05

申请人： Seiji Kajiyama ,  Yoichi Tsuchiya ,  Masato Yamada ,  Yasuyuki Kanou ,  Shuichi Ichiura

发明人： Seiji Kajiyama ,  Yoichi Tsuchiya ,  Masato Yamada ,  Yasuyuki Kanou ,  Shuichi Ichiura

IPC分类号： G11B700

CPC分类号： G11B7/1353 ,  G11B7/08582 ,  G11B7/123 ,  G11B7/127 ,  G11B7/1362 ,  G11B7/1367 ,  G11B7/139 ,  G11B2007/0006 ,  G11B2007/13727

摘要： An optical pickup device which includes a semiconductor laser selectively generating a laser beam with a wavelength of 635 nm, a laser beam with a wavelength of 780 nm, and an optical device having a central region in which a hologram is formed and a peripheral region in which a diffraction grating is formed. In particular, the optical device is arranged immediately below an objective lens, and the central region allows transmission of the laser beam with the wavelength of 635 nm without any diffraction but increases the diameter of the teaser beam to the wavelength of 780 nm by diffraction. On the other hand, peripheral region allows transmission of the laser beam with the wavelength of 635 nm without any diffraction, but substantially shields the laser beam with the wavelength of 780 nm by diffraction. Thus, each laser beam with the wavelength 635 nm is transmitted through objective lens and focused on a signal recording surface of a DVD. The periphery of the laser beam with the wavelength of 780 nm is significantly diffracted by peripheral region of optical device and only the central portion of the laser beam enters objective lens while increasing its diameter. Thus, the laser beam with the wavelength of 780 nm is focused on a signal recording surface of a CD-R or a CD-ROM. Therefore, the optical pickup device is capable of compatibly reproducing the DVD, CD-R and CD-ROM.

摘要翻译： 一种光拾取装置，包括选择性地产生波长为635nm的激光束的半导体激光器，波长为780nm的激光束，以及具有形成全息图的中心区域的光学元件和周边区域 形成衍射光栅。 特别地，光学装置被布置在物镜的正下方，并且中心区域允许透射具有635nm波长的激光束而没有任何衍射，但是通过衍射将前导光束的直径增加到780nm的波长。 另一方面，外围区域允许透射波长为635nm的激光束而没有衍射，但是通过衍射基本上屏蔽了波长为780nm的激光束。 因此，波长为635nm的每个激光束通过物镜透射并聚焦在DVD的信号记录表面上。 波长为780nm的激光束的周围被光学器件的周边区域显着地衍射，并且只有激光束的中心部分在增加其直径的同时进入物镜。 因此，将波长为780nm的激光束聚焦在CD-R或CD-ROM的信号记录面上。 因此，光学拾取装置能够兼容地再现DVD，CD-R和CD-ROM。