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    Devices, systems and methods for electrostatic force enhanced semiconductor bonding
    31.
    发明授权
    Devices, systems and methods for electrostatic force enhanced semiconductor bonding 有权

    公开(公告)号：US11114328B2

    公开(公告)日：2021-09-07

    申请号：US16206895

    申请日：2018-11-30

    Applicant: Micron Technology, Inc.

    Inventor： Shu Qin ,  Ming Zhang

    IPC: H01L21/683 ,  H01L21/762

    Abstract: Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

    PLASMA DOPING OF GAP FILL MATERIALS
    32.
    发明申请
    PLASMA DOPING OF GAP FILL MATERIALS 有权

    公开(公告)号：US20210202243A1

    公开(公告)日：2021-07-01

    申请号：US15930875

    申请日：2020-05-13

    Applicant: Micron Technology, Inc.

    Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

    IPC: H01L21/02 ,  H01L21/3105

    Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

    Phase change memory stack with treated sidewalls
    33.
    发明授权
    Phase change memory stack with treated sidewalls 有权

    公开(公告)号：US10720574B2

    公开(公告)日：2020-07-21

    申请号：US16266777

    申请日：2019-02-04

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

    Phase change memory stack with treated sidewalls
    34.
    发明授权
    Phase change memory stack with treated sidewalls 有权

    公开(公告)号：US10546895B2

    公开(公告)日：2020-01-28

    申请号：US16241525

    申请日：2019-01-07

    Applicant: Micron Technology, Inc.

    Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC: H01L27/24 ,  H01L45/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    Integrated Assemblies and Methods of Forming Assemblies
    35.
    发明申请
    Integrated Assemblies and Methods of Forming Assemblies 审中-公开

    公开(公告)号：US20190198324A1

    公开(公告)日：2019-06-27

    申请号：US16292021

    申请日：2019-03-04

    Applicant: Micron Technology, Inc.

    Inventor： Yushi Hu ,  Shu Qin

    IPC: H01L21/225 ,  H01L21/28 ,  H01L27/11556 ,  H01L27/11582

    CPC classification number: H01L21/2253 ,  H01L21/28 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/11582

    Abstract: Some embodiments include an integrated assembly having a first semiconductor structure containing heavily-doped silicon, a germanium-containing interface material over the first semiconductor structure, and a second semiconductor structure over the germanium-containing interface material. The second semiconductor structure has a heavily-doped lower region adjacent the germanium-containing interface material and has a lightly-doped upper region above the heavily-doped lower region. The lightly-doped upper region and heavily-doped lower region are majority doped to a same dopant type, and join to one another along a boundary region. Some embodiments include an integrated assembly having germanium oxide between a first silicon-containing structure and a second silicon-containing structure. Some embodiments include methods of forming assemblies.

    Phase change memory stack with treated sidewalls
    36.
    发明授权
    Phase change memory stack with treated sidewalls 有权

    公开(公告)号：US10177198B2

    公开(公告)日：2019-01-08

    申请号：US15613823

    申请日：2017-06-05

    Applicant: Micron Technology, Inc.

    Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC: H01L27/24 ,  H01L45/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    Integrated Assemblies and Methods of Forming Assemblies
    39.
    发明申请
    Integrated Assemblies and Methods of Forming Assemblies 审中-公开

    公开(公告)号：US20170125426A1

    公开(公告)日：2017-05-04

    申请号：US14927217

    申请日：2015-10-29

    Applicant: Micron Technology, Inc.

    Inventor： Yushi Hu ,  Shu Qin

    IPC: H01L27/115

    CPC classification number: H01L21/2253 ,  H01L21/28 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/11582

    Abstract: Some embodiments include an integrated assembly having a first semiconductor structure containing heavily-doped silicon, a germanium-containing interface material over the first semiconductor structure, and a second semiconductor structure over the germanium-containing interface material. The second semiconductor structure has a heavily-doped lower region adjacent the germanium-containing interface material and has a lightly-doped upper region above the heavily-doped lower region. The lightly-doped upper region and heavily-doped lower region are majority doped to a same dopant type, and join to one another along a boundary region. Some embodiments include an integrated assembly having germanium oxide between a first silicon-containing structure and a second silicon-containing structure. Some embodiments include methods of forming assemblies.

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