公开(公告)号：US07449064B2

公开(公告)日：2008-11-11

申请号：US11682385

申请日：2007-03-06

申请人： Makoto Iwai ,  Katsuhiro Imai

发明人： Makoto Iwai ,  Katsuhiro Imai

IPC分类号： C30B11/02

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/403

摘要： An AlN single crystal is grown by pressurizing a melt including at least gallium, aluminum and sodium in an atmosphere containing nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature in a range of 850° C. to 1200° C.

摘要翻译： 通过在包含氮气的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。 优选地，AlN单晶在50atms或更低的氮分压下和在850℃至1200℃的温度范围内生长。

公开(公告)号：US20110287222A1

公开(公告)日：2011-11-24

申请号：US13136056

申请日：2011-07-21

申请人： Takayuki Hirao ,  Makoto Iwai ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Makoto Iwai ,  Katsuhiro Imai

IPC分类号： C01B21/06 ,  B32B3/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  Y10T428/24355

摘要： A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.

摘要翻译： 制备其上形成有氮化镓薄膜的表面上的蓝宝石衬底作为晶种衬底并置于生长容器中。 称量镓和钠金属以达到25至32:68至75的摩尔比并加入容器中。 将容器放入反应容器中。 入口管连接到反应容器。 从氮气罐通过压力控制器引入氮气以填充反应容器。 当将反应容器的内部压力控制为预定的氮气压力并且设定目标温度使得下部加热器的温度高于上部加热器的温度时，生长氮化镓晶体。 结果，提供了具有大晶粒尺寸和低位错密度的13族氮化物晶体。

公开(公告)号：US20070144427A1

公开(公告)日：2007-06-28

申请号：US11682385

申请日：2007-03-06

申请人： Makoto Iwai ,  Katsuhiro Imai

发明人： Makoto Iwai ,  Katsuhiro Imai

IPC分类号： C30B11/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/403

摘要： An AlN single crystal is grown by pressurizing a melt comprising at least gallium, aluminum and sodium in an atmosphere comprising nitrogen. Preferably, the AIN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature of 850° C. or higher and 1200° C. or lower.

摘要翻译： 通过在包含氮气的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。 优选地，将AIN单晶在50atms以下的氮分压下，在850℃以上且1200℃以下的温度下生长。

公开(公告)号：US08241422B2

公开(公告)日：2012-08-14

申请号：US10594846

申请日：2005-03-30

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B25/12

CPC分类号： C30B9/10 ,  C30B29/406

摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

公开(公告)号：US20120111264A1

公开(公告)日：2012-05-10

申请号：US13344809

申请日：2012-01-06

申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai

发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai

IPC分类号： C30B9/04

CPC分类号： H01L21/02639 ,  C30B9/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0265

摘要： A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface 1b is 100 μm or more and 1 mm or less.

摘要翻译： 属于III族的金属的氮化物的单晶的多个晶种膜形成在基板上，而在衬底上形成未被晶种膜覆盖的非生长表面。 属于III族的金属的氮化物的单晶生长在籽晶膜上。 多个晶种膜由非生长面分离，并且沿至少两个方向X和Y排列。晶种膜的最大内接圆直径“A”为50μm以上且6mm以下， 晶种膜的外接圆直径“B”为50μm以上且10mm以下，非生长面1b的最大内切圆直径“C”为100μm以上且1mm以下。

公开(公告)号：US09290861B2

公开(公告)日：2016-03-22

申请号：US13496982

申请日：2010-10-15

申请人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

IPC分类号： C30B29/40 ,  C30B33/08 ,  H01L21/02

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254

摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。

公开(公告)号：US07839471B2

公开(公告)日：2010-11-23

申请号：US11686229

申请日：2007-03-14

申请人： Mutsumi Matsuo ,  Katsuhiro Imai ,  Tomohiko Kojima ,  Yoshio Yamaguchi

发明人： Mutsumi Matsuo ,  Katsuhiro Imai ,  Tomohiko Kojima ,  Yoshio Yamaguchi

IPC分类号： G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/134309 ,  G02F1/13439

摘要： A liquid crystal device has a plurality of pixels arranged. The liquid crystal device includes a first substrate, a second substrate opposing the first substrate, liquid crystal provided between the first substrate and the second substrate, wires formed on the first substrate, and a reflective layer formed on the first substrate. Each pixel has a reflective display region formed by the reflective layer and a transparent display region without the reflective layer, and each wire is routed between two pixels in the transparent display region and in the reflective display region.

摘要翻译： 液晶装置具有多个像素排列。 液晶装置包括第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的液晶，形成在第一基板上的布线，以及形成在第一基板上的反射层。 每个像素具有由反射层形成的反射显示区域和没有反射层的透明显示区域，并且每条导线在透明显示区域和反射显示区域中的两个像素之间布线。

公开(公告)号：US07371972B2

公开(公告)日：2008-05-13

申请号：US10833258

申请日：2004-04-27

申请人： Satoshi Taguchi ,  Kazuo Oike ,  Hideki Uehara ,  Katsuhiro Imai ,  Chihiro Tanaka

发明人： Satoshi Taguchi ,  Kazuo Oike ,  Hideki Uehara ,  Katsuhiro Imai ,  Chihiro Tanaka

IPC分类号： H01R12/14

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/1365 ,  Y10T29/49174 ,  Y10T29/49194 ,  Y10T29/49208

摘要： An electrical wiring structure is provided which can be formed simultaneously when non-linear elements containing corrosion resistant metal wires and non-corrosion resistant metal wires are formed. In addition, a manufacturing method of the electrical wiring structure, an electro-optical device substrate provided with the electrical wiring structure, an electro-optical device, and a manufacturing method thereof are also provided. In particular, an oxide layer and the non-corrosion resistant metal wire are sequentially formed on a surface of the corrosion resistant metal wire. An exposed portion of the corrosion resistant metal wire is formed by removing part of the oxide layer. An electrical connection auxiliary member, such as a through-hole formed at the exposed portion or a conductive inorganic oxide film formed on the corrosion resistant metal wire and the exposed portion, is formed to electrically connect the corrosion resistant metal wire and the non-corrosion resistant metal wire.

摘要翻译： 提供了一种电气布线结构，当形成包含耐腐蚀金属线和不耐腐蚀金属线的非线性元件时，可以同时形成。 此外，还提供了电气布线结构的制造方法，设置有电布线结构的电光装置基板，电光装置及其制造方法。 特别地，在耐腐蚀金属线的表面上依次形成氧化物层和非耐腐蚀金属线。 通过去除部分氧化物层形成耐腐蚀金属线的暴露部分。 形成在暴露部分处形成的通孔的电连接辅助构件或形成在耐腐蚀金属线和暴露部分上的导电无机氧化物膜，以形成电连接耐腐蚀金属线和非腐蚀性 耐金属丝。

公开(公告)号：US20070076146A1

公开(公告)日：2007-04-05

申请号：US11524255

申请日：2006-09-21

申请人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

发明人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133345 ,  G02F1/133555 ,  G02F1/133711

摘要： A liquid crystal device includes a pair of substrates, a liquid crystal layer provided between the substrates, and a plurality of sub-pixels each having a transmissive display region and a reflective display region. One of the substrates includes switching elements corresponding to the sub-pixels, lines connected to the switching elements, and an insulating film provided on the switching elements and the lines. The insulating film includes first recesses provided in the transmissive display regions, and second recesses provided along boundaries between the adjoining sub-pixels. At least a part of the insulating film other than the first and second recesses planarly overlaps with the reflective display regions. The thickness of the liquid crystal layer is smaller in the reflective display regions than in the transmissive display regions having the first recesses. The depth of the second recesses is smaller than the depth of the first recesses.

摘要翻译： 液晶装置包括一对基板，设置在基板之间的液晶层和分别具有透射显示区域和反射显示区域的多个子像素。 其中一个基板包括对应于子像素的开关元件，连接到开关元件的线，以及设置在开关元件和线上的绝缘膜。 绝缘膜包括设置在透射显示区域中的第一凹部和沿着邻接的子像素之间的边界设置的第二凹部。 除了第一和第二凹部以外的绝缘膜的至少一部分与反射显示区域平面地重叠。 反射显示区域中的液晶层的厚度比具有第一凹部的透射显示区域的厚度小。 第二凹部的深度小于第一凹部的深度。

公开(公告)号：US06036775A

公开(公告)日：2000-03-14

申请号：US358066

申请日：1999-07-21

申请人： Minoru Imaeda ,  Akihiko Honda ,  Katsuhiro Imai ,  Yuichiro Imanishi ,  Nobuyuki Kokune ,  Shoji Sogo ,  Kazuaki Yamaguchi ,  Tetsuo Taniuchi

发明人： Minoru Imaeda ,  Akihiko Honda ,  Katsuhiro Imai ,  Yuichiro Imanishi ,  Nobuyuki Kokune ,  Shoji Sogo ,  Kazuaki Yamaguchi ,  Tetsuo Taniuchi

IPC分类号： C30B15/00 ,  C30B15/08 ,  C30B35/00

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1064

摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

摘要翻译： 公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物 单晶体向下移动。