公开(公告)号：US20070297103A1

公开(公告)日：2007-12-27

申请号：US11472126

申请日：2006-06-21

申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

IPC分类号： G11B5/127

CPC分类号： G11B5/3983 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/183 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.

摘要翻译： 公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。 因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。 插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个附加的FeCo层，以得到由FeCo / [HA / IL] N HA表示的构型，[HA / IL] N < HA / FeCo或FeCo / [HA / IL] N / HACo，其中n为整数> = 1，HA为Heusler合金层，IL为插入层。 任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。 例如，Co 2 MnSi可以与Al或FeCo靶或与Co 2 N 2 MnAl或Co 2 FeSi靶共溅射。

公开(公告)号：US20070047159A1

公开(公告)日：2007-03-01

申请号：US11209231

申请日：2005-08-23

申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T428/1121

摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。 这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。 在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。 所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

公开(公告)号：US20060132989A1

公开(公告)日：2006-06-22

申请号：US11016507

申请日：2004-12-17

申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

公开(公告)号：US20060061919A1

公开(公告)日：2006-03-23

申请号：US11268076

申请日：2005-11-07

申请人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3268 ,  H01F41/305 ,  Y10T29/49044

摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

公开(公告)号：US06998150B2

公开(公告)日：2006-02-14

申请号：US10388289

申请日：2003-03-12

申请人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

IPC分类号： C23C8/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3268 ,  H01F41/305 ,  Y10T29/49044

摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

摘要翻译： 已经发现，在CoFe或CoFe / NiFe复合材料中插入铜层压体导致CPP GMR和DRA的值更高。 然而，这种类型的结构在高-10 -6至-10 -5范围内表现出非常负的磁致伸缩。 通过给铜层压板进行氧曝光解决了这个问题。当这样做时，发现自由层具有非常低的正磁致伸缩常数。 此外，磁致伸缩常数的值可以通过改变自由层的厚度和/或氧处理的铜层压板的位置和数量来调节。

公开(公告)号：US20050219773A1

公开(公告)日：2005-10-06

申请号：US10812695

申请日：2004-03-30

申请人： Min Li ,  Youfeng Zheng ,  Kunliang Zhang ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Youfeng Zheng ,  Kunliang Zhang ,  Simon Liao ,  Kochan Ju

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3272 ,  H01F41/308 ,  Y10T29/49034 ,  Y10T428/1143

摘要： A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FM1 and FM2 separated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM1)]/t(FM2)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.

摘要翻译： 一种用于制造其自由层的堆叠稳定化的缝合CPP合成自旋阀传感器的方法。 该方法还可以应用于缝合隧道磁阻传感器的形成。 通过使用包括在传感器的柱部分中表示为LBL的铁磁性层的纵向偏压结构和在传感器的缝合部分内的合成交换耦合三层的静电耦合，自由层被强烈地稳定。 三层由两个铁磁层组成，FM 1和FM 2由耦合层分开，并沿反向平行方向纵向磁化。 层的磁性厚度的标准：CoFe的[t（LBL）+ t（FM 1）] / t（FM 2）= 70/90埃确保了强的交换耦合。 三层的磁化是在不影响铁磁自由层的先前磁化的低场退火中进行的。

公开(公告)号：US20050052789A1

公开(公告)日：2005-03-10

申请号：US10657504

申请日：2003-09-08

申请人： Kunliang Zhang ,  Kochan Ju ,  Min Li ,  Youfeng Zheng ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Kochan Ju ,  Min Li ,  Youfeng Zheng ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/31 ,  G11B5/33 ,  G11B5/127

CPC分类号： G11B5/332 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/398

摘要： Increases in the AP1 and AP2 thickness cause the free layer to be off-center in a CPP magnetic read head. This problem has been overcome by inserting supplementary magnetic shields within the spin valve, located as close as possible to the stack. These supplementary shields enable the read gap width to be reduced by about 430 Å and the free layer to shift back towards the center by about 30 Å.

摘要翻译： AP1和AP2厚度的增加导致CPP磁头中的自由层偏心。 通过在辅助磁屏蔽件内插入尽可能靠近堆叠的位置来克服这个问题。 这些辅助屏蔽使得读取间隙宽度可以减小约430埃，而自由层向中心向后移动大约30埃。

公开(公告)号：US20160284983A1

公开(公告)日：2016-09-29

申请号：US15162059

申请日：2016-05-23

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01L43/10 ,  G11C11/16 ,  G11B5/39 ,  H01L27/22 ,  H01L43/02

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

摘要翻译： 公开了具有种子/ FGL /间隔物/ SIL /封盖结构的自旋转移振荡器（STO），其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强垂直磁各向异性 （A1 / A2）YFeCo层叠场产生层（FGL）中的（PMA）。 自旋注入层（SIL）可以层叠有（A1 / A2）XFeCo构型。 SIL中的FeCo层与（A1 / A2）X层叠体交换（x为5〜50），以提高坚固性。 FGL中的（A1 / A2）Y层叠体（y = 5〜30）可以与高B层交换耦合，以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO通常形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US09222994B2

公开(公告)日：2015-12-29

申请号：US13200148

申请日：2011-09-19

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

IPC分类号： G01R23/02 ,  G01R33/12 ,  G11B5/39 ,  H01L43/08 ,  G11C11/16

CPC分类号： G01R33/1284 ,  G11B5/3903 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

摘要翻译： 公开了一种用于测量至少具有磁振荡层（MOL），结层和磁参考层（MRL）的自旋转矩振荡器中的频率的方法。 在第一实施例中，在施加DC电流以将MOL激发到振荡状态之后，将小的面内磁场施加到STO。 MRL具有稍微倾斜的垂直磁化，以产生面内磁化分量，用作用于测量MOL面内磁化分量的振荡频率的参考层。 作为可变STO电阻的结果，在DC电流中产生AC电压变化，并直接与MOL振荡频率相关。 或者，具有垂直和平面内部分量的场可以在外部施加，或者通过在两个磁极之间形成STO，从而在MRL中产生面内磁化参考分量。

公开(公告)号：US08692343B2

公开(公告)日：2014-04-08

申请号：US12799468

申请日：2010-04-26

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01L43/08 ,  H01L29/82

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

摘要： The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as AP1, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.

摘要翻译： 通过将一个或多个磁阻增强层（MREL）插入到一个或多个有源层（例如AP1，SIL，FGL和自由层）的大约中心，改善了MR器件的性能。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。