公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US20180098008A1

公开(公告)日：2018-04-05

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

公开(公告)号：US20170347047A1

公开(公告)日：2017-11-30

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

CPC classification number: H04N5/374 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/23229 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452 ,  H04N5/37457

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US20240348946A1

公开(公告)日：2024-10-17

申请号：US18298975

申请日：2023-04-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao

IPC: H04N25/771 ,  H04N25/59

CPC classification number: H04N25/771 ,  H04N25/59

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is coupled between the photodiode and a floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a pixel voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network includes a first LOFIC coupled between the floating diffusion and the first bias voltage source, and a second LOFIC coupled between the floating diffusion and the second bias voltage source. The first LOFIC is configured to be forward biased and the second LOFIC is configured to be reverse biased at an end of an integration period, and image charge discharged from the first LOFIC and image charge discharged from the second LOFIC compensate each other during a readout period.

公开(公告)号：US12096141B2

公开(公告)日：2024-09-17

申请号：US18154715

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yifei Du ,  Zhiqiang Lin ,  Bill Phan ,  Woon Il Choi

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/771

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/771

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

公开(公告)号：US12087792B2

公开(公告)日：2024-09-10

申请号：US17572413

申请日：2022-01-10

Applicant: OmniVision Technologies, Inc.

Inventor： Seong Yeol Mun ,  Bill Phan ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627

Abstract: A reduced cross-talk pixel-array substrate includes a semiconductor substrate, a buffer layer, a metal annulus, and an attenuation layer. The semiconductor substrate includes a first photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first photodiode region. The buffer layer is on the back surface and has a feature located above the first photodiode region with the feature being one of a recess and an aperture. The metal annulus is on the buffer layer and covers the trench. The attenuation layer is above the first photodiode region.

公开(公告)号：US12062670B2

公开(公告)日：2024-08-13

申请号：US17243024

申请日：2021-04-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Yuanliang Liu ,  Keiji Mabuchi ,  Gang Chen ,  Bill Phan ,  Duli Mao ,  Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/1463

Abstract: An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.

公开(公告)号：US20240244350A1

公开(公告)日：2024-07-18

申请号：US18154770

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bill Phan ,  Duli Mao ,  Yuanliang Liu ,  Heesoo Kang ,  Yifei Du ,  Woon Il Choi

IPC: H04N25/77

CPC classification number: H04N25/77

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A plurality of capacitor-switch pairs is coupled between the reset transistor and a bias voltage source. Each of the plurality of capacitor-switch pairs includes a lateral overflow integration capacitor (LOFIC) and a switch transistor coupled to the LOFIC.

公开(公告)号：US11876110B2

公开(公告)日：2024-01-16

申请号：US17343553

申请日：2021-06-09

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Heesoo Kang ,  Bill Phan ,  Seong Yeol Mun

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/1463 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14689

Abstract: SiGe photodiode for crosstalk reduction. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes. The plurality of pixels are configured to receive an incoming light through an illuminated surface of the semiconductor material. Each pixel includes a first photodiode comprising a silicon (Si) material; and a second photodiode having the Si material and a silicon germanium (SiGe) material.

公开(公告)号：US20230307478A1

公开(公告)日：2023-09-28

申请号：US17705133

申请日：2022-03-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Qin Wang ,  Bill Phan ,  Shiyu Sun ,  Hui Zang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14629

Abstract: Image sensors, isolation structures, and techniques of fabrication are provided. An image sensor includes a source of electromagnetic radiation disposed on a substrate, a pixel array disposed on the substrate and thermally coupled with source of electromagnetic radiation, and an isolation structure disposed on the substrate between the source of electromagnetic radiation and the pixel array. The isolation structure can define a first reflective surface oriented on a first bias relative to a lateral axis of the pixel array and a second reflective surface oriented on a second bias relative to the lateral axis. The isolation structure can be configured to attenuate residual electromagnetic radiation reaching a proximal region of the pixel array by pairing a first reflection and a second reflection of the electromagnetic radiation by the first reflective surface and the second reflective surface.