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公开(公告)号：US06881681B2
公开(公告)日：2005-04-19
申请号：US10301993
申请日：2002-11-22
IPC分类号： C23C16/44 , H01L21/31 , H01L21/44 , H01L21/469
CPC分类号： C23C16/4401
摘要： Heating a reaction chamber or other apparatus in the absence of product wafers to a “curing” temperature above a deposition temperature between the deposition of a film on a first set of semiconductor product wafers and the deposition of a film on a second set of semiconductor product wafers. In some embodiments, a boat with filler wafers is in the reaction chamber when the reaction chamber is heated to the curing temperature. In some examples, the films are deposited by a low pressure chemical vapor deposition (LPCVD) process. With some processes, if the deposition of a film on product wafers is at a temperature below a certain temperature, the film deposited with the product wafer on a boat, filler wafers, and/or other structures in the reaction chamber can cause contamination of product wafers subsequently deposited with a film in the presence of the boat and filler wafers. Contamination from these previously deposited films is inhibited by applying a curing temperature to the deposited fillers in the absence of the product wafers before a film is deposited on the next set of product wafers.
摘要翻译： 在不存在产品晶片的情况下将反应室或其它装置加热到高于第一组半导体产品晶片上的膜的沉积和第二组半导体产品上的膜的沉积之后的沉积温度的“固化”温度 晶圆 在一些实施例中，当反应室被加热到固化温度时，具有填充物晶片的舟皿在反应室中。 在一些实例中，通过低压化学气相沉积（LPCVD）工艺沉积膜。 通过一些方法，如果在产品晶片上的膜沉积处于低于某一温度的温度，则沉积在产品晶片上的膜在反应室中的船，填料晶片和/或其它结构上可能导致产物污染 随后在存在船和填料晶片的情况下沉积薄膜。 在将膜沉积在下一组产品晶片之前，通过在不存在产品晶片的情况下将沉积的填料施加固化温度来抑制来自这些先前沉积的膜的污染。
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公开(公告)号：US08659087B2
公开(公告)日：2014-02-25
申请号：US12639394
申请日：2009-12-16
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/28194 , H01L21/82345 , H01L21/823842 , H01L29/517 , H01L29/518 , H01L29/7833
摘要： A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
摘要翻译： 电子器件的晶体管结构可以包括栅极介电层和栅电极。 栅极电极可以在栅极电介质层和栅电极的其余部分之间具有表面部分。 表面部分可以形成为使得栅电极的另一部分主要在最终晶体管结构中设置有效功函数。
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公开(公告)号：US08426310B2
公开(公告)日：2013-04-23
申请号：US12787296
申请日：2010-05-25
申请人： Olubunmi O. Adetutu , Ted R. White , Mark D. Hall
发明人： Olubunmi O. Adetutu , Ted R. White , Mark D. Hall
IPC分类号： H01L21/44
CPC分类号： H01L21/76895 , H01L21/76807 , H01L21/76808
摘要： A method for forming a shared contact in a semiconductor device having a gate electrode corresponding to a first transistor and a source/drain region corresponding to a second transistor is provided. The method includes forming a first opening in a dielectric layer overlying the gate electrode and the source/drain region, wherein the first opening extends substantially to the gate electrode corresponding to the first transistor. The method further includes after forming the first opening, forming a second opening, contiguous with the first opening, in the overlying dielectric layer, wherein the second opening extends substantially to the source/drain region corresponding to the second transistor. The method further includes forming the shared contact between the gate electrode corresponding to the first transistor and the source/drain region corresponding to the second transistor by filling the first opening and the second opening with a conductive material.
摘要翻译： 提供一种用于在具有对应于第一晶体管的栅电极和对应于第二晶体管的源/漏区的半导体器件中形成共用触点的方法。 该方法包括在覆盖栅电极和源极/漏极区的电介质层中形成第一开口，其中第一开口基本上延伸到对应于第一晶体管的栅电极。 该方法还包括在形成第一开口之后，在覆盖介质层中形成与第一开口邻接的第二开口，其中第二开口基本上延伸到对应于第二晶体管的源极/漏极区域。 该方法还包括通过用导电材料填充第一开口和第二开口来形成对应于第一晶体管的栅电极与对应于第二晶体管的源极/漏极区之间的共用接触。
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34.发明授权Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities 有权电子器件包括含有含有一种或多种杂质的含金属层的栅电极公开(公告)号：US07868389B2
公开(公告)日：2011-01-11
申请号：US11928314
申请日：2007-10-30
IPC分类号： H01L29/76
CPC分类号： H01L21/823857 , H01L21/823842
摘要： One or more impurities may be incorporated within a metal-containing layer of a metal-containing gate electrode to modify the work function of the metal-containing gate electrode of a transistor can affect the threshold voltage of the transistor. In one embodiment, the impurity can be used in a p-channel transistor to allow the work function of a metal-containing gate electrode to be closer to the valence band for silicon. In another embodiment, the impurity can be used in an n-channel transistor to allow the work function of a metal-containing gate electrode to be closer to the conduction band for silicon. In a particular embodiment, a boron-containing species is implanted into a metal-containing layer within the metal-containing gate electrode within a p-channel transistor, so that the metal-containing gate electrode has a work function closer to the valence band for silicon as compared to the metal-containing gate electrode without the boron-containing species.
摘要翻译： 可以在含金属的栅电极的含金属层内并入一种或多种杂质以改变晶体管的含金属栅电极的功函数可影响晶体管的阈值电压。 在一个实施例中，杂质可用于p沟道晶体管，以允许含金属的栅电极的功函数更接近硅的价带。 在另一实施例中，杂质可用于n沟道晶体管，以允许含金属的栅电极的功函数更接近于硅的导带。 在一个具体的实施方案中，将含硼物质注入到在p沟道晶体管内的含金属栅电极内的含金属层中，使得含金属栅电极具有更接近价带的功函数 与没有含硼物质的含金属栅电极相比。
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公开(公告)号：US20100090287A1
公开(公告)日：2010-04-15
申请号：US12639394
申请日：2009-12-16
IPC分类号： H01L27/088 , H01L29/51
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/28194 , H01L21/82345 , H01L21/823842 , H01L29/517 , H01L29/518 , H01L29/7833
摘要： A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
摘要翻译： 电子器件的晶体管结构可以包括栅极介电层和栅电极。 栅极电极可以在栅极电介质层和栅电极的其余部分之间具有表面部分。 表面部分可以形成为使得栅电极的另一部分主要在最终晶体管结构中设置有效功函数。
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公开(公告)号：US20090142895A1
公开(公告)日：2009-06-04
申请号：US11948209
申请日：2007-11-30
IPC分类号： H01L21/8234
CPC分类号： H01L21/823871 , H01L21/76897 , H01L21/823468 , H01L21/823475 , H01L29/665
摘要： A method for forming a via includes forming a gate electrode over a semiconductor substrate, forming a source/drain region in the semiconductor substrate adjacent the gate electrode, forming a silicide region in the source/drain region, forming a post-silicide spacer adjacent the gate electrode after forming the silicide region, forming an interlayer dielectric layer over the gate electrode, the post-silicide spacer, and the silicide region, and forming a conductive via in the interlayer dielectric layer, extending to the silicide region.
摘要翻译： 形成通孔的方法包括在半导体衬底上形成栅电极，在与栅电极相邻的半导体衬底中形成源极/漏极区域，在源/漏区域中形成硅化物区域，形成邻近硅化物间隔区 在形成硅化物区域之后形成栅电极，在栅电极，硅化物间隔物和硅化物区域之上形成层间电介质层，并且在层间电介质层中形成延伸到硅化物区域的导电通孔。
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公开(公告)号：US20080248649A1
公开(公告)日：2008-10-09
申请号：US11697106
申请日：2007-04-05
IPC分类号： H01L21/311
CPC分类号： H01L21/31612 , H01L21/02164 , H01L21/02271 , H01L21/02362 , H01L21/31116 , H01L21/31144 , H01L21/3221 , H01L21/76816 , H01L21/76829 , H01L21/76832 , H01L21/76837 , H01L27/115 , H01L27/11521 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus are described for forming a first inter-layer dielectric (ILD0) stack having a protective gettering layer (72) with a substantially uniform thickness. After forming device components (32, 33) on a substrate (31), a gap fill dielectric layer of SATEOS (52) is deposited over an etch stop layer of PEN ESL (42) and then planarized before sequentially depositing a gettering layer of BPTEOS (72) and capping dielectric layer (82) on the planarized gap fill dielectric layer (52). Once the ILD0 stack is formed, one or more contact openings (92, 94, 96) are etched through the ILD0 stack, thereby exposing the etch stop layer (42) over the intended contact regions.
摘要翻译： 描述了一种用于形成具有基本均匀厚度的保护性吸气层（72）的第一层间电介质（ILD0）堆叠的方法和装置。 在衬底（31）上形成器件部件（32,33）之后，将SATEOS（52）的间隙填充电介质层沉积在PEN ESL（42）的蚀刻停止层上，然后在顺序沉积BPTEOS吸气层之前进行平坦化 （72）和在平坦化间隙填充介电层（52）上的覆盖电介质层（82）。 一旦形成了ILD0堆叠，就通过ILD0堆叠蚀刻一个或多个接触开口（92,94,96），从而将蚀刻停止层（42）暴露在预期的接触区域上。
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38.发明授权Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same 有权包括具有反掺杂沟道区的晶体管的半导体器件及其形成方法公开(公告)号：US07432164B2
公开(公告)日：2008-10-07
申请号：US11342025
申请日：2006-01-27
IPC分类号： H01L21/8236 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/823807 , H01L21/823842
摘要： A method for making a semiconductor device includes providing a first substrate region and a second substrate region, wherein at least a part of the first substrate region has a first conductivity type and at least a part of the second substrate region has a second conductivity type different from the first conductivity type. The method further includes forming a dielectric layer over at least a portion of the first substrate region and at least a portion of the second substrate region. The method further includes forming a metal-containing gate layer over at least a portion of the dielectric layer overlying the first substrate region. The method further includes introducing dopants into at least a portion of the first substrate region through the metal-containing gate layer.
摘要翻译： 一种制造半导体器件的方法包括提供第一衬底区域和第二衬底区域，其中第一衬底区域的至少一部分具有第一导电类型，并且第二衬底区域的至少一部分具有不同的第二导电类型 从第一导电类型。 该方法还包括在第一衬底区域的至少一部分和第二衬底区域的至少一部分上形成电介质层。 该方法还包括在覆盖第一衬底区域的介电层的至少一部分上形成含金属的栅极层。 该方法还包括通过含金属的栅极层将掺杂剂引入到第一衬底区域的至少一部分中。
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39.发明授权公开(公告)号：US07297588B2
公开(公告)日：2007-11-20
申请号：US11046079
申请日：2005-01-28
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823842
摘要： One or more impurities may be incorporated within a metal-containing layer of a metal-containing gate electrode to modify the work function of the metal-containing gate electrode of a transistor can affect the threshold voltage of the transistor. In one embodiment, the impurity can be used in a p-channel transistor to allow the work function of a metal-containing gate electrode to be closer to the valence band for silicon. In another embodiment, the impurity can be used in an n-channel transistor to allow the work function of a metal-containing gate electrode to be closer to the conduction band for silicon. In a particular embodiment, a boron-containing species is implanted into a metal-containing layer within the metal-containing gate electrode within a p-channel transistor, so that the metal-containing gate electrode has a work function closer to the valence band for silicon as compared to the metal-containing gate electrode without the boron-containing species.
摘要翻译： 可以在含金属的栅电极的含金属层内并入一种或多种杂质以改变晶体管的含金属栅电极的功函数可影响晶体管的阈值电压。 在一个实施例中，杂质可用于p沟道晶体管，以允许含金属的栅电极的功函数更接近硅的价带。 在另一实施例中，杂质可用于n沟道晶体管，以允许含金属的栅电极的功函数更接近于硅的导带。 在一个具体的实施方案中，将含硼物质注入到在p沟道晶体管内的含金属栅电极内的含金属层中，使得含金属栅电极具有更接近价带的功函数 与没有含硼物质的含金属栅电极相比。
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40.发明授权Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) 有权用局部绝缘体半导体（SOI）形成半导体器件的方法公开(公告)号：US07045432B2
公开(公告)日：2006-05-16
申请号：US10771855
申请日：2004-02-04
CPC分类号： H01L29/66772 , H01L29/785 , H01L29/78603
摘要： A semiconductor on insulator transistor is formed beginning with a bulk silicon substrate. An active region is defined in the substrate and an oxygen-rich silicon layer that is monocrystalline is formed on a top surface of the active region. On this oxygen-rich silicon layer is grown an epitaxial layer of silicon. After formation of the epitaxial layer of silicon, the oxygen-rich silicon layer is converted to silicon oxide while at least a portion of the epitaxial layer of silicon remains as monocrystalline silicon. This is achieved by applying high temperature water vapor to the epitaxial layer. The result is a silicon on insulator structure useful for making a transistor in which the gate dielectric is on the remaining monocrystalline silicon, the gate is on the gate dielectric, and the channel is in the remaining monocrystalline silicon under the gate.
摘要翻译： 半导体绝缘体晶体管以体硅衬底开始形成。 在衬底中限定有源区，并且在有源区的顶表面上形成单晶的富氧硅层。 在该富氧硅层上生长硅的外延层。 在形成硅的外延层之后，将富氧硅层转化为氧化硅，而硅的外延层的至少一部分保留为单晶硅。 这通过将高温水蒸气施加到外延层来实现。 结果是用于制造晶体管的绝缘体上硅结构，其中栅极电介质位于剩余的单晶硅上，栅极位于栅极电介质上，沟道位于栅极之下的剩余单晶硅中。
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