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    Thermal acid generators and photoresist pattern trimming compositions and methods
    36.
    发明授权
    Thermal acid generators and photoresist pattern trimming compositions and methods 有权

    公开(公告)号：US10241407B2

    公开(公告)日：2019-03-26

    申请号：US15297545

    申请日：2016-10-19

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder Kaur ,  Cong Liu ,  Kevin Rowell ,  Gerhard Pohlers ,  Mingqi Li

    IPC: G03F7/004 ,  G03F7/40 ,  G03F7/039 ,  C07D213/61 ,  C07C309/58 ,  C07D239/26

    Abstract: Provided are ionic thermal acid generators of the following general formula (I): wherein: Ar1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

    PATTERN TRIMMING METHODS
    39.
    发明申请
    PATTERN TRIMMING METHODS 有权

    公开(公告)号：US20170255103A1

    公开(公告)日：2017-09-07

    申请号：US15062695

    申请日：2016-03-07

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Kevin Rowell ,  Cong Liu ,  Cheng Bai Xu ,  Irvinder Kaur ,  Jong Keun Park

    IPC: G03F7/42 ,  G03F7/20 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027 ,  H01L21/02

    CPC classification number: G03F7/425 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/36 ,  G03F7/405 ,  H01L21/02057 ,  H01L21/0273 ,  H01L21/0274

    Abstract: Methods of trimming a photoresist pattern comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern trimming composition over the photoresist pattern, wherein the pattern trimming composition comprises a second polymer and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of 50 wt % or more based on the solvent system; (d) heating the coated semiconductor substrate, thereby causing a change in solubility of a surface region of the photoresist pattern in a rinsing agent to be applied; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

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