摘要:
In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer. The x-ray beam then moves to that location on the pad of interest to be measured and begins the XRD scan on the pad of interest to ultimately determine the strain of the top silicon germanium layer of the pad of interest.
摘要:
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
摘要:
An integrated circuit system that includes: providing a PFET device including a doped epitaxial layer; and forming a source/drain extension by employing an energy source to diffuse a dopant from the doped epitaxial layer.
摘要:
The present invention relates to a semiconductor device comprising at least one n-channel field effect transistor (n-FET). Specifically, the n-FET comprises first and second patterned stressor layers that both contain a carbon-substituted and tensilely stressed single crystal semiconductor. The first patterned stressor layer has a first carbon concentration and is located in source and drain (S/D) extension regions of the n-FET at a first depth. The second patterned stressor layer has a second, higher carbon concentration and is located in S/D regions of the n-FET at a second, deeper depth. Such an n-FET with the first and second patterned stressor layers of different carbon concentration and different depths provide improved stress profile for enhancing electron mobility in the channel region of the n-FET.
摘要:
The present invention relates to a semiconductor device comprising at least one n-channel field effect transistor (n-FET). Specifically, the n-FET comprises first and second patterned stressor layers that both contain a carbon-substituted and tensilely stressed single crystal semiconductor. The first patterned stressor layer has a first carbon concentration and is located in source and drain (S/D) extension regions of the n-FET at a first depth. The second patterned stressor layer has a second, higher carbon concentration and is located in S/D regions of the n-FET at a second, deeper depth. Such an n-FET with the first and second patterned stressor layers of different carbon concentration and different depths provide improved stress profile for enhancing electron mobility in the channel region of the n-FET.
摘要:
When forming a silicon nitride film from a nitrogen precursor, using a silicon precursor combination rather than a single silane precursor advantageously increases the deposition rate. For example, adding silane during formation of a silicon nitride film made using BTBAS and ammonia improves (increases) the deposition rate while still yielding a film with a favorably high stress.