公开(公告)号：US11422423B2

公开(公告)日：2022-08-23

申请号：US16667948

申请日：2019-10-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC: H01L27/32 ,  G02F1/1368 ,  H01L51/52 ,  H05B33/04 ,  G02F1/1333 ,  G02F1/1362

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

公开(公告)号：US11101299B2

公开(公告)日：2021-08-24

申请号：US16107536

申请日：2018-08-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

IPC: H01L27/12 ,  H01L33/52 ,  G02F1/1362 ,  H01L27/32 ,  H01L51/52 ,  H01L27/13

Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

公开(公告)号：US10103211B2

公开(公告)日：2018-10-16

申请号：US15669296

申请日：2017-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

IPC: H01L27/12 ,  H01L27/32 ,  H01L21/768 ,  H01L33/00 ,  H01L51/52

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

公开(公告)号：US10096795B2

公开(公告)日：2018-10-09

申请号：US15262629

申请日：2016-09-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Murakami ,  Hisashi Ohtani ,  Shunpei Yamazaki

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

公开(公告)号：US09966390B2

公开(公告)日：2018-05-08

申请号：US15361724

申请日：2016-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

IPC: H01L29/04 ,  H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786 ,  H01L51/52

CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

Abstract: A display device includes first to fifth insulating films, first to third conductive films, semiconductor film, a planarization layer, an organic resin film, a pixel electrode, an opposing electrode and a light-emitting member. The first insulating film includes nitrogen. The second and third insulating films include oxygen. The fifth insulating film is an inorganic insulating film. The fourth insulating film, the fifth insulating film, the planarization layer and the organic resin film include first to fourth opening, respectively. An edge portion of the third opening and an edge portion of the fourth opening are rounded. Part of the third conductive film and part of the planarization layer are located in the second opening. Part of the pixel electrode and part of the organic resin film are located in the third opening. Part of the light-emitting member and part of the opposing electrode are located in the fourth opening.

公开(公告)号：US09520410B2

公开(公告)日：2016-12-13

申请号：US14446934

申请日：2014-07-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Motomu Kurata ,  Hiroyuki Hata ,  Mitsuhiro Ichijo ,  Takashi Ohtsuki ,  Aya Anzai ,  Masayuki Sakakura

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L33/60 ,  H01L51/00 ,  H01L51/56

CPC classification number: H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

公开(公告)号：US09508756B2

公开(公告)日：2016-11-29

申请号：US14884257

申请日：2015-10-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

IPC: H01L33/40 ,  H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786 ,  H01L51/52

CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

Abstract: Disclosed is a display device including a seal material and a sealing material. The seal material surrounds a pixel portion and the sealing material overlaps with at least any of a driver circuit and a protective circuit. The pixel portion includes a planarization layer and an organic resin film each having an opening, an end portion of which is rounded. The pixel portion further includes a first electrode, a light-emitting member over the first electrode, and a second electrode over the light-emitting member. Part of the first electrode and part of the organic resin film are located in the opening of the planarization layer. Part of the light-emitting member and Part of the second electrode are located in the opening of the organic resin film.

Abstract translation: 公开了一种包括密封材料和密封材料的显示装置。 密封材料围绕像素部分，密封材料与驱动电路和保护电路中的至少任何一个重叠。 像素部分包括平坦化层和每个具有开口的有机树脂膜，其端部是圆形的。 像素部分还包括第一电极，位于第一电极上方的发光部件和发光部件上的第二电极。 第一电极的一部分和部分有机树脂膜位于平坦化层的开口内。 发光部件的一部分和第二电极的一部分位于有机树脂膜的开口部。

公开(公告)号：US09444069B2

公开(公告)日：2016-09-13

申请号：US13731129

申请日：2012-12-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Murakami ,  Hisashi Ohtani ,  Shunpei Yamazaki

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5246 ,  H01L27/3225 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3276 ,  H01L27/3295 ,  H01L27/3297 ,  H01L51/0005 ,  H01L51/5203 ,  H01L51/5237 ,  H01L51/525 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/5323

Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

Abstract translation: 本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。 在本发明中，在像素电极上形成间隔物，从而在形成电致发光层时保护像素电极层免受掩模的影响。 此外，由于包含具有透水性的有机材料的层被密封在具有密封材料的显示装置中，并且密封材料和包含有机材料的层不接触，所以发光元件的劣化由于 可以防止诸如水的污染物。 密封材料形成在显示装置中的驱动电路区域的一部分中，因此也可以实现显示装置的较窄的边缘。

公开(公告)号：US09431431B2

公开(公告)日：2016-08-30

申请号：US14070976

申请日：2013-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC: H01L27/14 ,  H01L27/12 ,  G02F1/1345 ,  H01L29/45 ,  H01L29/786 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

Abstract: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

公开(公告)号：US08963161B2

公开(公告)日：2015-02-24

申请号：US14026369

申请日：2013-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

IPC: H01L27/00 ,  H01L29/04 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1362

CPC classification number: H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

Abstract translation: 在半导体器件中，栅极信号线在结晶半导体膜之上彼此间隔开。 因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。 在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。 由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。 从而防止了驱动电路TFT遭受静电放电损坏。