公开(公告)号：US09006024B2

公开(公告)日：2015-04-14

申请号：US13865344

申请日：2013-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto

IPC: H01L27/12 ,  H01L21/34 ,  H01L29/66 ,  H01L29/786 ,  H01L27/115 ,  H01L27/118

CPC classification number: H01L29/66765 ,  H01L27/1156 ,  H01L27/11807 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/7869

Abstract: In a semiconductor device in which transistors are formed in a plurality of layers to form a stack structure, a method for manufacturing the semiconductor device formed by controlling the threshold voltage of the transistors formed in the layers selectively is provided. Further, a method for manufacturing the semiconductor device by which oxygen supplying treatment is effectively performed is provided. First oxygen supplying treatment is performed on a first oxide semiconductor film including a first channel formation region of a transistor in the lower layer. Then, an interlayer insulating film including an opening which is formed so that the first channel formation region is exposed is formed over the first oxide semiconductor film and second oxygen supplying treatment is performed on a second oxide semiconductor film including a second channel formation region over the interlayer insulating film and the exposed first channel formation region.

Abstract translation: 在其中以多层形成晶体管以形成堆叠结构的半导体器件中，提供了通过选择性地控制形成在层中的晶体管的阈值电压而形成的制造半导体器件的方法。 此外，提供了一种用于制造有效执行氧气供应处理的半导体器件的方法。 在包括下层的晶体管的第一沟道形成区域的第一氧化物半导体膜上进行第一氧供给处理。 然后，在第一氧化物半导体膜的上方形成包括形成为露出第一沟道形成区域的开口的层间绝缘膜，在第二氧化物半导体膜上进行第二氧供给处理，该第二氧化物半导体膜包括第二沟道形成区域 层间绝缘膜和暴露的第一通道形成区域。

公开(公告)号：US08759167B2

公开(公告)日：2014-06-24

申请号：US13688598

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L29/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US08698970B2

公开(公告)日：2014-04-15

申请号：US13939468

申请日：2013-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: G02F1/136

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US08680522B2

公开(公告)日：2014-03-25

申请号：US13832479

申请日：2013-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/12

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20130228777A1

公开(公告)日：2013-09-05

申请号：US13862528

申请日：2013-04-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki ,  Hideaki Kuwabara

IPC: H01L33/00

CPC classification number: H01L33/0041 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.

Abstract translation: 在使用第一氧化物半导体层和第二氧化物半导体层的堆叠的底栅极薄膜晶体管中，形成作为沟道保护层的氧化物绝缘层，与氧化物半导体层的与 栅电极层。 在与绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的叠层的周边部分（包括侧面）的氧化物绝缘层。

公开(公告)号：US11924589B2

公开(公告)日：2024-03-05

申请号：US17779717

申请日：2020-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Seiko Inoue ,  Daichi Mishima

IPC: H04N9/43 ,  G06T3/40 ,  G06T5/30 ,  G06T7/90 ,  H04N7/18 ,  H04N9/67 ,  H04N25/76

CPC classification number: H04N9/43 ,  G06T7/90 ,  H04N7/18 ,  H04N9/67 ,  H04N25/76 ,  G06T2207/10024 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30232

Abstract: Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region.
An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. As a selection standard for reducing the amount of learning data, in an HSV color space, saturation is used, and selection is performed so that the saturation has optimal distribution. When colorization disclosed in this specification is performed, the colorization and object highlight processing can be performed at the same time.

公开(公告)号：US11574932B2

公开(公告)日：2023-02-07

申请号：US17126262

申请日：2020-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US11024516B2

公开(公告)日：2021-06-01

申请号：US16526375

申请日：2019-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L21/477 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/786

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US10998449B2

公开(公告)日：2021-05-04

申请号：US16864364

申请日：2020-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/04 ,  H01L27/32 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1-δO3(ZnO)m (0

公开(公告)号：US10734530B2

公开(公告)日：2020-08-04

申请号：US16372930

申请日：2019-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.