Light emitting diode for display and display apparatus having the same

    公开(公告)号:US12142602B2

    公开(公告)日:2024-11-12

    申请号:US17844653

    申请日:2022-06-20

    Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

    Light emitting device
    37.
    发明授权

    公开(公告)号:US11876156B2

    公开(公告)日:2024-01-16

    申请号:US17115783

    申请日:2020-12-08

    CPC classification number: H01L33/62 H01L33/08 H01L33/382 H01L33/44

    Abstract: A light emitting device including first, second, and third light emitting parts disposed near each other and each including a first-type semiconductor layer, a first active layer, and a second-type semiconductor layer, a first pad electrically coupled with the second-type semiconductor layer of the first light emitting part, a second pad electrically coupled with the second-type semiconductor layer of the second light emitting part, a third pad electrically coupled with the second-type semiconductor layer of the third light emitting part, and a common pad electrically coupled with the first-type semiconductor layer of the first, second, and third light emitting parts, in which, in a current density per light emitting part of about 20 A/cm2, one of the first, second, and third light emitting parts that is configured to emit light having the longest peak wavelength has a largest normalized external quantum efficiency.

    LIGHT EMITTING DEVICE WITH LED STACK FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20230033645A1

    公开(公告)日:2023-02-02

    申请号:US17963147

    申请日:2022-10-10

    Abstract: A light emitting diode pixel for a display includes a first subpixel including a first LED sub-unit, a second subpixel including a second LED sub-unit, a third subpixel including a third LED sub-unit, and a bonding layer overlapping the first, second, and third subpixels, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, each of the first, second, and third LED sub-units is disposed on a different plane, and light generated from the second subpixel is configured to be emitted to an outside of the light emitting diode pixel by passing through a lesser number of LED sub-units than light generated from the first subpixel and emitted to the outside.

    LIGHT EMITTING DIODE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20220392879A1

    公开(公告)日:2022-12-08

    申请号:US17844653

    申请日:2022-06-20

    Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

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