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    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    32.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 审中-公开
    具有电极板的发光二极管芯片

    公开(公告)号：US20170047483A1

    公开(公告)日：2017-02-16

    申请号：US15336510

    申请日：2016-10-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/08 ,  H01L33/46 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42

    CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    Abstract translation: 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

    LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
    34.
    发明申请
    LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
    具有改进的光提取效率的发光二极管

    公开(公告)号：US20150280074A1

    公开(公告)日：2015-10-01

    申请号：US14740131

    申请日：2015-06-15

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/22 ,  H01L33/42

    CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

    Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

    LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME
    36.
    发明申请
    LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME 审中-公开
    具有改进的光提取效率的发光二极管及其制造方法

    公开(公告)号：US20150014702A1

    公开(公告)日：2015-01-15

    申请号：US14383470

    申请日：2013-02-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Tae Gyun Kim

    IPC: H01L33/22 ,  H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0058

    Abstract: Disclosed are a light-emitting diode having improved light extraction efficiency and a method for manufacturing same. This light-emitting diode includes: a gallium nitride substrate having an upper surface and a lower surface; and a gallium nitride semiconductor multilayer structure disposed on the lower surface of the substrate, and having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Herein, the gallium nitride substrate has a main pattern having a protruding portion and a concave portion on the upper surface, and a rough surface formed on the protruding portion of the main pattern. The light-emitting diode is capable of improving light extraction efficiency through the upper surface thereof since the rough surface is formed along with the main pattern on the upper surface of the gallium nitride substrate.

    Abstract translation: 公开了一种具有改进的光提取效率的发光二极管及其制造方法。 该发光二极管包括：具有上表面和下表面的氮化镓衬底; 以及设置在所述基板的下表面上并具有第一导电半导体层，有源层和第二导电半导体层的氮化镓半导体多层结构。 这里，氮化镓衬底具有在上表面上具有突出部分和凹入部分的主图案，以及形成在主图案的突出部分上的粗糙表面。 发光二极管能够通过其上表面提高光提取效率，因为粗糙表面与氮化镓衬底的上表面上的主图案一起形成。

    LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY
    37.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
    发光二极管具有提高的光效

    公开(公告)号：US20140299905A1

    公开(公告)日：2014-10-09

    申请号：US14309658

    申请日：2014-06-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jeong Hee YANG ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

    IPC: H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

    Abstract: A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses.

    Abstract translation: 发光二极管包括基板和设置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 包括凹部和凸部的透明电极层设置在第二导电型半导体层上。 微透镜设置在透明电极层上并完全覆盖凹部，并且仅部分地覆盖设置在微透镜之间的凸部。

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