公开(公告)号：US20140225182A1

公开(公告)日：2014-08-14

申请号：US14253690

申请日：2014-04-15

Applicant: Soitec

Inventor： Mohamad A. Shaheen ,  Frederic Allibert ,  Gweltaz Gaudin ,  Fabrice Lallement ,  Didier Landru ,  Karine Landry ,  Carlos Mazure

IPC: H01L29/786

CPC classification number: H01L29/78603 ,  H01L29/32 ,  H01L29/7841 ,  H01L31/0248

Abstract: A substrate comprises a base wafer, an insulating layer over the base wafer, and a top semiconductor layer over the insulating layer on a side thereof opposite the base wafer. The insulating layer comprises a charge-confining layer confined on one or both sides with diffusion barrier layers, wherein the charge-confining layer has a density of charges in absolute value higher than 1010 charges/cm2. Alternatively, the insulating layer comprises charge-trapping islands embedded therein, wherein the charge-trapping islands have a total density of charges in absolute value higher than 1010 charges/cm2.

Abstract translation: 衬底包括基底晶片，在基底晶片上方的绝缘层，以及在与基底晶片相对的一侧上的绝缘层上的顶部半导体层。 绝缘层包括限制在具有扩散阻挡层的一侧或两侧的电荷限制层，其中电荷限制层的绝对值的电荷密度高于1010电荷/ cm 2。 或者，绝缘层包括嵌入其中的电荷捕获岛，其中电荷捕获岛具有高于1010电荷/ cm 2的绝对值的电荷的总密度。

公开(公告)号：US20240266172A1

公开(公告)日：2024-08-08

申请号：US18004594

申请日：2021-06-08

Applicant: Commissariat À L'énergie Atomique Et Aux Énergies Alternatives ,  Soitec

Inventor： Frédéric Allibert ,  Didier Landru ,  Oleg Kononchuk ,  Eric Guiot ,  Gweltaz Gaudin ,  Julie Widiez ,  Franck Fournel

IPC: H01L21/18 ,  H01L21/02 ,  H01L21/04 ,  H01L21/324 ,  H01L23/00

CPC classification number: H01L21/187 ,  H01L21/02016 ,  H01L21/0485 ,  H01L21/324 ,  H01L24/83 ,  H01L2224/83894 ,  H01L2224/83948 ,  H01L2924/10253 ,  H01L2924/10272

Abstract: The invention relates to a semiconductor structure (100) that comprises a useful layer (10) made of monocrystalline semiconductor material and extending along a main plane (x, y), a support substrate (30) made of semiconductor material, and an interface area (20) between the useful layer (10) and the support substrate (30), the support substrate extending parallel to the main plane (x, y), the structure (100) being characterised in that the interface area (20) comprises nodules (21) that:—are electrically conductive, in that they contain a metal material forming ohmic contact with the useful layer (10) and the support substrate (30);—have a thickness, along an axis (z) normal to the main plane (x, y) , of less than or equal to 30 nm;—are separate or adjoining, the separate nodules (21) being separated from each other by regions (22) of direct contact between the useful layer (10) and the support substrate (30). The invention also relates to a method for manufacturing the structure (100).

公开(公告)号：US20240030061A1

公开(公告)日：2024-01-25

申请号：US18255574

申请日：2021-11-19

Applicant: Commissariat À L'énergie Atomique Et Aux Énergies Alternatives ,  Soitec

Inventor： Larry Vincent ,  Shay Reboh ,  Lucie Le Van-Jodin ,  Frédéric Milesi ,  Ludovic Ecarnot ,  Gweltaz Gaudin ,  Didier Landru

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/76254 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/76218

Abstract: A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. The donor substrate comprises: —a buried weakened plane delimiting an upper portion and a lower portion of the donor substrate, —in the upper portion, a first layer, a second layer adjacent to the buried weakened plane, and a stop layer between the first layer and the second layer the first layer composed of the first material, the stop layer being formed of a second material, —an amorphized sub-portion, made amorphous by ion implantation, having a thickness less than that of the upper portion, and including at least the first layer; the second layer comprising at least one single-crystal sub-layer, adjacent to the buried weakened plane. Two embodiments of a method may be used for transferring a single-crystal thin layer from the donor substrate.

公开(公告)号：US11742817B2

公开(公告)日：2023-08-29

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H01L21/02 ,  H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20230230868A1

公开(公告)日：2023-07-20

申请号：US18001033

申请日：2021-04-26

Applicant: Soitec

Inventor： Hugo Biard ,  Gweltaz Gaudin ,  Séverin Rouchier ,  Didier Landru

IPC: H01L21/683 ,  H01L21/324 ,  H01L21/322 ,  H01L21/18

CPC classification number: H01L21/6835 ,  H01L21/324 ,  H01L21/3221 ,  H01L21/187 ,  H01L2221/68381 ,  H01L2221/68368

Abstract: A temporary substrate, which is detachable at a detachment temperature higher than 1000° C. comprises:



a semiconductor working layer extending along a main plane,
a carrier substrate,
an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate,
a bonding interface located in or adjacent the intermediate layer,
gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

公开(公告)号：US11424156B2

公开(公告)日：2022-08-23

申请号：US16969346

申请日：2019-01-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Rénald Guerin ,  Norbert Colombet

IPC: H01L21/762 ,  H01L21/20

Abstract: A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

公开(公告)号：US20220172983A1

公开(公告)日：2022-06-02

申请号：US17436532

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer from a donor substrate to a carrier substrate comprises: a) providing the donor substrate, the donor substrate including a buried weakened plane; b) providing the carrier substrate; c) joining the donor substrate to the carrier substrate to form a bonded structure; and d) annealing the bonded structure in order to increase the level of weakening of the buried weakened plane. A predetermined stress is applied to the buried weakened plane during the annealing for a period of time, the predetermined stress being selected so as to initiate the splitting wave once a given level of weakening has been reached. At the end of the period of time, the given level of weakening having been reached, the predetermined stress causes initiation and self-sustained propagation of the splitting wave along the buried weakened plane, resulting in the useful layer being transferred to the carrier substrate.

公开(公告)号：US20220059370A1

公开(公告)日：2022-02-24

申请号：US17438866

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/687

Abstract: A holding device for a fracturable assembly, which is intended to separate along a fracture plane defined between an upper part and a lower part of the fracturable assembly, comprises at least two protrusions configured to hold keep the fracturable assembly suspended in a substantially horizontal holding position, the protrusions being intended to be located between the upper part and the lower part, against a peripheral chamfer of the upper part; a support located below and at a distance from the, protrusions so as to gravitationally receive the lower part when the fracturable assembly is separated, and to keep it at a distance from the upper part held by the protrusions.

公开(公告)号：US20210118717A1

公开(公告)日：2021-04-22

申请号：US17135340

申请日：2020-12-28

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US20210028036A1

公开(公告)日：2021-01-28

申请号：US17042755

申请日：2019-03-22

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Énergies Alternatives

Inventor： François Rieutord ,  Frédéric Mazen ,  Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/66 ,  G01N29/14 ,  G01N29/46

Abstract: A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.