公开(公告)号：US11670730B2

公开(公告)日：2023-06-06

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US11171255B2

公开(公告)日：2021-11-09

申请号：US16386170

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Giovanni Condorelli ,  Lucio Renna

IPC: H01L31/14 ,  H01L27/144 ,  H01L31/024 ,  H01L31/0352 ,  H01L31/107 ,  G01J1/44 ,  H01L31/18 ,  G01J1/42

Abstract: A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

公开(公告)号：US11049990B2

公开(公告)日：2021-06-29

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US10797196B2

公开(公告)日：2020-10-06

申请号：US16386163

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/14 ,  H01L27/14 ,  H01L31/024 ,  H01L31/0216 ,  H01L31/107 ,  H01L31/18 ,  G01J1/44 ,  H01L31/0352 ,  H01L27/144

Abstract: A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.

公开(公告)号：US20180284090A1

公开(公告)日：2018-10-04

申请号：US15782626

申请日：2017-10-12

Applicant: STMicroelectronics S.R.L. ,  Consiglio Nazionale delle Ricerche - CNR

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01N33/00 ,  G01N21/84 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/101

CPC classification number: G01N33/0047 ,  G01N21/251 ,  G01N21/255 ,  G01N21/31 ,  G01N21/33 ,  G01N21/8422 ,  G01N27/4141 ,  G01N33/0031 ,  G01N33/0067 ,  H01L27/1443 ,  H01L31/02024 ,  H01L31/02327 ,  H01L31/1013 ,  H01L31/103

Abstract: An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.

公开(公告)号：US09933301B2

公开(公告)日：2018-04-03

申请号：US14960131

申请日：2015-12-04

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L27/146 ,  H01L31/101 ,  H01L31/108

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

公开(公告)号：US09899557B2

公开(公告)日：2018-02-20

申请号：US15045384

申请日：2016-02-17

Applicant: STMicroelectronics S.r.l.

Inventor： Anna Muscara' ,  Massimo Cataldo Mazzillo

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0232

CPC classification number: H01L31/107 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

公开(公告)号：US09725308B2

公开(公告)日：2017-08-08

申请号：US14303522

申请日：2014-06-12

Applicant: STMicroelectronics S.r.l.

Inventor： Alfio Russo ,  Massimo Cataldo Mazzillo ,  Ferenc Nagy

IPC: G01H9/00 ,  B81C1/00 ,  G01H3/06

CPC classification number: B81C1/0015 ,  B81C2203/075 ,  G01H3/06 ,  G01H9/00

Abstract: A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes.

公开(公告)号：US09671351B2

公开(公告)日：2017-06-06

申请号：US14659038

申请日：2015-03-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Alfio Russo

IPC: G01N21/85 ,  G01N21/31 ,  G01N21/05 ,  H01L31/18 ,  H01L31/0216 ,  G01N21/61 ,  H01L31/00 ,  G01N21/33

CPC classification number: H01L27/1443 ,  G01M15/108 ,  G01N21/05 ,  G01N21/31 ,  G01N21/314 ,  G01N21/33 ,  G01N21/61 ,  G01N21/85 ,  G01N2021/3137 ,  G01N2021/8578 ,  G01N2201/0612 ,  H01L31/00 ,  H01L31/02162 ,  H01L31/0312 ,  H01L31/1035 ,  H01L31/1037 ,  H01L31/108 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

公开(公告)号：US09299873B2

公开(公告)日：2016-03-29

申请号：US14270760

申请日：2014-05-06

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Anna Muscara'

IPC: H01L31/107 ,  H01L27/144

CPC classification number: H01L31/107 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract translation: 雪崩光电二极管包括阴极区域和阳极区域。 包括阻挡区域和绝缘区域的横向绝缘区域围绕阳极区域。 阴极区域在阴极区域的核心内形成平面光导，引导件构造成引导在雪崩期间产生的光子。 阻挡区域具有延伸穿过平面光引导件的厚度以围绕芯部并且防止光子传播超出阻挡区域。 核心形成了在核心内产生的少数载体的电气限制区域。