公开(公告)号：US20180294792A1

公开(公告)日：2018-10-11

申请号：US15876791

申请日：2018-01-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul LEE ,  Tah Joon PARK ,  Jae Chang LEE ,  Tae Yoon KIM ,  Chang Hyun LIM ,  Hwa Sun LEE ,  Tae Hun LEE ,  Hyun Min HWANG ,  Tae Kyung LEE

IPC: H03H9/02 ,  H03H9/60

Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.

公开(公告)号：US20180278230A1

公开(公告)日：2018-09-27

申请号：US15788062

申请日：2017-10-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US20180062620A1

公开(公告)日：2018-03-01

申请号：US15462110

申请日：2017-03-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Yong Jin KANG ,  Moon Chul LEE ,  Jae Hyoung GIL ,  Chang Hyun LIM ,  Tae Yoon KIM

IPC: H03H9/60 ,  H03H9/54 ,  H01L41/047

CPC classification number: H03H9/60 ,  H01L41/0477 ,  H03H3/02 ,  H03H9/547

Abstract: A bulk-acoustic wave filter device includes: a lower electrode layer disposed on the substrate; a bonding part disposed on the lower electrode layer, at an edge of the substrate; a ground part spaced apart from the bonding part; and a flow suppressing part disposed between the bonding part and the ground part, and offset with respect to the bonding part and the ground part.

公开(公告)号：US20170244021A1

公开(公告)日：2017-08-24

申请号：US15271483

申请日：2016-09-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Dae Hun JEONG ,  Jae Chang LEE ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H01L41/047 ,  H01L41/29

CPC classification number: H01L41/0475 ,  H01L41/047 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021

Abstract: An acoustic resonator includes a resonating part including a piezoelectric layer located on a first electrode and a second electrode located on the piezoelectric layer; and a frame located on the second electrode along an edge of the resonating part, wherein the frame includes an inner surface and an outer surface, and the inner surface includes two inclined surfaces.

公开(公告)号：US20190253036A1

公开(公告)日：2019-08-15

申请号：US16193529

申请日：2018-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Sang Uk SON ,  Tae Yoon KIM ,  Jong Woon KIM

IPC: H03H9/17 ,  H03H9/13

CPC classification number: H03H9/177 ,  H03H9/132

Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

公开(公告)号：US20190199319A1

公开(公告)日：2019-06-27

申请号：US16292715

申请日：2019-03-05

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Jae Chang LEE ,  Duck Hwan KIM

IPC: H03H9/13 ,  H03H3/02 ,  H03H9/10

CPC classification number: H03H9/131 ,  H03H3/02 ,  H03H9/1007

Abstract: A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

公开(公告)号：US20190058455A1

公开(公告)日：2019-02-21

申请号：US15996921

申请日：2018-06-04

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon KIM ,  Won HAN ,  Chang Hyun LIM

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/05

Abstract: A bulk-acoustic wave resonator includes a substrate; a lower electrode formed on the substrate, and at least a portion of the lower electrode is formed on a cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a membrane layer formed below the lower electrode and forming the cavity together with the substrate; and a protruding portion formed on the membrane layer and further formed in the cavity in a direction that extends away from the membrane layer.

公开(公告)号：US20180205360A1

公开(公告)日：2018-07-19

申请号：US15812842

申请日：2017-11-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Dae Ho KIM ,  Yong Suk KIM ,  Seung Hun HAN ,  Moon Chul LEE ,  Chang Hyun LIM ,  Sung Jun LEE ,  Sang Kee YOON ,  Tae Yoon KIM ,  Sang Uk SON

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13

CPC classification number: H03H9/02118 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02157 ,  H03H9/132 ,  H03H9/17 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023

Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

公开(公告)号：US20180152168A1

公开(公告)日：2018-05-31

申请号：US15789024

申请日：2017-10-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Chang Hyun LIM ,  Yong Suk KIM ,  Seung Hun HAN ,  Sung Jun LEE ,  Sang Kee YOON ,  Tae Yoon KIM

IPC: H03H9/02 ,  H03H9/17 ,  H01L41/047

CPC classification number: H03H9/02007 ,  H01L41/047 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/17 ,  H03H9/173 ,  H03H9/174 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.

公开(公告)号：US20180048281A1

公开(公告)日：2018-02-15

申请号：US15487620

申请日：2017-04-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul LEE ,  Jae Chang LEE ,  Chang Hyun LIM ,  Tae Hun LEE ,  Tae Kyung LEE ,  Tae Yoon KIM

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/54

CPC classification number: H03H9/02102 ,  H01L41/047 ,  H03H9/173 ,  H03H9/542 ,  H03H9/564

Abstract: A bulk acoustic filter device includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.