公开(公告)号：US20150129993A1

公开(公告)日：2015-05-14

申请号：US14171574

申请日：2014-02-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang Eun Lee

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 自由层包括混合垂直磁各向异性（PMA）结构和四方体体垂直磁各向异性（B-PMA）结构中的至少一种。 自由层和被钉扎层中的至少一个具有大于面外退磁能的垂直磁各向异性能。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20150041933A1

公开(公告)日：2015-02-12

申请号：US14048164

申请日：2013-10-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Roman Chepulskyy ,  Dmytro Apalkov ,  Xueti Tang ,  Keith Chan ,  Mohamad Towfik Krounbi

IPC: H01L43/02

CPC classification number: H01F10/3254 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes body-centered cubic Co. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括体心立方公司。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20140264671A1

公开(公告)日：2014-09-18

申请号：US14048329

申请日：2013-10-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

IPC: H01L43/02 ,  H01L43/10

CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

公开(公告)号：US11348715B2

公开(公告)日：2022-05-31

申请号：US16535933

申请日：2019-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong Sik Jung ,  Xueti Tang

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01F41/32

Abstract: A perpendicular bottom-free-layer STT-MRAM cell includes a bottom-free-layer magnetic tunnel junction (BMTJ). The BMTJ includes a composite metal oxide seed layer, and a free layer comprising boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer; a metal oxide layer on the first metal layer; and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.

公开(公告)号：US10439133B2

公开(公告)日：2019-10-08

申请号：US15603402

申请日：2017-05-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

IPC: H01L43/00 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

公开(公告)号：US10283701B1

公开(公告)日：2019-05-07

申请号：US15890101

申请日：2018-02-06

Applicant: Samsung Electronics Co., LTD.

Inventor： Ikhtiar ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/12 ,  H01F10/10 ,  H01F41/14 ,  G11C11/16

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

公开(公告)号：US20190067366A1

公开(公告)日：2019-02-28

申请号：US15787524

申请日：2017-10-18

Applicant: Samsung Electronics Co., LTD.

Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Gen Feng ,  Ikhtiar

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

公开(公告)号：US20180247684A1

公开(公告)日：2018-08-30

申请号：US15965563

申请日：2018-04-27

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Gen Feng ,  Vladimir Nikitin

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).

公开(公告)号：US09876164B1

公开(公告)日：2018-01-23

申请号：US15367014

申请日：2016-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Dustin Erickson ,  Donkoun Lee ,  Gen Feng

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/165 ,  H01L27/226 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes an alloy. The alloy includes [CoxFeyBz]uMgt, where u+t=1 and x+y+z=1.

公开(公告)号：US09818931B2

公开(公告)日：2017-11-14

申请号：US14981391

申请日：2015-12-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng

IPC: H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.