利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

54 条记录 (耗时 0.025 秒)

    Sense amplifier power supply circuit
    31.
    发明授权
    Sense amplifier power supply circuit 有权
    感应放大器电源电路

    公开(公告)号：US07751268B2

    公开(公告)日：2010-07-06

    申请号：US12070173

    申请日：2008-02-14

    申请人： Sang Il Park

    发明人： Sang Il Park

    IPC分类号： G11C7/00

    CPC分类号： G11C5/147 ,  G11C7/08

    摘要： A sense amplifier power supply circuit includes an overdriving unit configured to apply a first voltage to a sense amplifier in response to a first enable signal, a sense amplifier driving unit configured to apply a second voltage to the sense amplifier in response to a second enable signal, and a switching unit configured to selectively apply the first voltage or the second voltage to the sense amplifier in response to the first enable signal and the second enable signal.

    摘要翻译： 读出放大器电源电路包括：过驱动单元，被配置为响应于第一使能信号向读出放大器施加第一电压;读出放大器驱动单元，被配置为响应于第二使能信号向读出放大器施加第二电压 以及开关单元，被配置为响应于所述第一使能信号和所述第二使能信号而选择性地将所述第一电压或所述第二电压施加到所述读出放大器。

    Semiconductor memory device to reduce off-current in standby mode
    32.
    发明申请
    Semiconductor memory device to reduce off-current in standby mode 有权
    半导体存储器件在待机模式下减少截止电流

    公开(公告)号：US20100085817A1

    公开(公告)日：2010-04-08

    申请号：US12319088

    申请日：2008-12-31

    申请人： Sang Il Park

    发明人： Sang Il Park

    IPC分类号： G11C7/00 ,  G11C8/08 ,  G11C8/00

    CPC分类号： G11C8/14 ,  G11C5/147 ,  G11C7/22 ,  G11C2207/2227

    摘要： A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals.

    摘要翻译： 提供能够在待机模式下减少截止电流的半导体存储器件。 半导体存储器件包括：使能信号生成单元，被配置为接收多个地址解码信号，并产生第一使能信号以选择第一单元块和第二使能信号以选择第二单元块;以及内部电压产生单元， 通过根据第一或第二使能信号控制第一电压的供应来产生内部电压。

    Sense amplifier power supply circuit
    33.
    发明申请
    Sense amplifier power supply circuit 有权
    感应放大器电源电路

    公开(公告)号：US20090109777A1

    公开(公告)日：2009-04-30

    申请号：US12070173

    申请日：2008-02-14

    申请人： Sang Il Park

    发明人： Sang Il Park

    IPC分类号： G11C7/06 ,  G11C5/14

    CPC分类号： G11C5/147 ,  G11C7/08

    摘要： A sense amplifier power supply circuit includes an overdriving unit configured to apply a first voltage to a sense amplifier in response to a first enable signal, a sense amplifier driving unit configured to apply a second voltage to the sense amplifier in response to a second enable signal, and a switching unit configured to selectively apply the first voltage or the second voltage to the sense amplifier in response to the first enable signal and the second enable signal.

    摘要翻译： 读出放大器电源电路包括：过驱动单元，被配置为响应于第一使能信号向读出放大器施加第一电压;读出放大器驱动单元，被配置为响应于第二使能信号向读出放大器施加第二电压 以及开关单元，被配置为响应于所述第一使能信号和所述第二使能信号而选择性地将所述第一电压或所述第二电压施加到所述读出放大器。

    Active matrix display device and manufacturing method thereof
    36.
    发明授权
    Active matrix display device and manufacturing method thereof 有权
    有源矩阵显示装置及其制造方法

    公开(公告)号：US07176493B2

    公开(公告)日：2007-02-13

    申请号：US10736703

    申请日：2003-12-17

    申请人： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

    发明人： Woo Young So ,  Kyung Jin Yoo ,  Sang Il Park

    IPC分类号： H01L21/84

    CPC分类号： G02F1/136227 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757

    摘要： The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering the semiconductor layer; c) forming a gate electrode on the gate insulating layer over the semiconductor layer; d) forming spacers on both side wall portions of the gate electrode while exposing both end portions of the semiconductor layer; e) ion-implaing a high-density impurity into the semiconductor layer to form high-density source and drain regions in the semiconductor layer; f) depositing sequentially a transparent conductive layer and a metal layer on the inter insulating layer; g) patterning the transparent conductive layer and the metal layer to form the source and drain electrodes, the source and drain electrodes directly contacting the high-density source and drain regions and having a dual-layered structure; h) forming a passivation layer over the whole surface of the substrate; i) etching the passivation layer and the metal layer to form an opening portion exposing a portions of the transparent conductive layer, thereby forming a pixel electrode; and j) performing a reflow process to cover the metal layer in the opening portion by the passivation layer.

    摘要翻译： 本发明公开了一种制造有源矩阵显示装置的方法，包括：a）在绝缘基板上形成半导体层; b）在半导体层会聚的同时在衬底的整个表面上形成栅极绝缘层; c）在半导体层上的栅极绝缘层上形成栅电极; d）在露出半导体层的两个端部部分的同时，在栅电极的两个侧壁部分上形成间隔物; e）将高密度杂质离子注入到半导体层中以在半导体层中形成高密度源极和漏极区; f）在所述绝缘层上依次沉积透明导电层和金属层; g）图案化透明导电层和金属层以形成源极和漏极，源极和漏极直接接触高密度源极和漏极区并具有双层结构; h）在衬底的整个表面上形成钝化层; i）蚀刻钝化层和金属层以形成露出透明导电层的一部分的开口部分，从而形成像素电极; 和j）进行回流处理以通过钝化层覆盖开口部分中的金属层。

    Bag with anti-theft function cross reference to related application
    37.
    发明授权
    Bag with anti-theft function cross reference to related application 有权
    手提袋具有防盗功​​能，交叉参考相关应用

    公开(公告)号：US09345300B2

    公开(公告)日：2016-05-24

    申请号：US14297560

    申请日：2014-06-05

    申请人： Sang Il Park

    发明人： Sang Il Park

    IPC分类号： G08B13/14 ,  A45C13/18

    CPC分类号： A45C13/18 ,  A45C13/20 ,  E05B65/52 ,  E05B73/0005 ,  G08B13/14 ,  G08B13/149

    摘要： Disclosed herein is a bag with an anti-theft function which is used to temporarily store various valuables (a wallet, a cellular phone, a camera, a watch, etc.) or clothes in a crowded place, for example, a water play area such as a beach or a water park, and is configured such that the stored valuables or the bag itself can be prevented from being stolen. The bag according to the present invention includes an anti-theft device which fastens first and second zippers that openably close an opening of the bag body to each other and binds the bag body to a surrounding structure, whereby valuables (a wallet, a cellular phone, a camera, a watch, etc.) stored in the bag body not only can be prevented from being stolen but the bag itself can also be prevented from being stolen because it is bound to the surrounding structure.

    摘要翻译： 本文公开了一种具有防盗功​​能的袋子，其用于临时存储各种贵重物品（钱包，手机，相机，手表等）或衣服在拥挤的地方，例如水上游乐区域 例如海滩或水上公园，并且被配置为使得可以防止存储的贵重物品或袋本身被盗。 根据本发明的袋子包括一个防盗装置，该防盗装置将第一和第二拉链紧固在一起，使第一和第二拉链可打开地将袋体的开口彼此靠近并将袋体绑在周围的结构上，由此贵重物品（钱包，蜂窝电话 ，相机，手表等）不仅可以防止被盗，而且还可以防止袋本身因为与周围结构的束缚而被盗。

    Semiconductor memory device and method for repairing the same
    39.
    发明授权
    Semiconductor memory device and method for repairing the same 有权
    半导体存储器件及其修复方法

    公开(公告)号：US08570821B2

    公开(公告)日：2013-10-29

    申请号：US13191625

    申请日：2011-07-27

    申请人： Sun Young Hwang ,  Sang Il Park

    发明人： Sun Young Hwang ,  Sang Il Park

    IPC分类号： G11C29/00

    CPC分类号： G11C29/4401 ,  G11C29/789

    摘要： A semiconductor memory device includes a latch address generation unit configured to latch row addresses to generate first and second latch addresses when at least one of memory cells coupled to sub word lines is faulty, wherein the first and second latch addresses select different main word lines, and a repair unit configured to perform a repair operation on memory cells coupled to the main word lines selected by the first and second latch addresses.

    摘要翻译： 半导体存储器件包括锁存地址生成单元，其被配置为当耦合到子字线的存储器单元中的至少一个有故障时，锁存行地址以产生第一和第二锁存器地址，其中第一和第二锁存器地址选择不同的主字线， 以及修复单元，被配置为对与由第一和第二锁存器地址选择的主字线耦合的存储器单元执行修复操作。