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156 条记录 (耗时 0.039 秒)

    Method for producing semiconductor substrate
    33.
    发明授权
    Method for producing semiconductor substrate 失效
    半导体衬底的制造方法

    公开(公告)号：US5854123A

    公开(公告)日：1998-12-29

    申请号：US729722

    申请日：1996-10-07

    申请人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    发明人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762 ,  H01L27/12 ,  H01L31/18 ,  H01L21/76

    CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L31/1892 ,  Y02E10/50

    摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

    摘要翻译： 提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。 为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。 通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。 此时，在多孔Si层上外延生长无孔单晶Si层。 此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。 随后，进行选择性蚀刻以去除多孔Si层。

    Method for producing semiconductor substrate by wafer bonding
    36.
    发明授权
    Method for producing semiconductor substrate by wafer bonding 失效
    通过晶片接合制造半导体衬底的方法

    公开(公告)号：US5763288A

    公开(公告)日：1998-06-09

    申请号：US881250

    申请日：1997-06-24

    申请人： Kiyofumi Sakaguchi ,  Takao Yonehara

    发明人： Kiyofumi Sakaguchi ,  Takao Yonehara

    IPC分类号： C30B33/06 ,  H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  H01L27/12 ,  H01L21/76

    CPC分类号： H01L21/187 ,  H01L21/2007

    摘要： A semiconductor substrate is produced by bonding a pair of substrate materials together, at least one of which comprises a semiconductor substrate material with or without an insulating layer on a surface thereof. The production includes treating the substrate materials with a suitable liquid such that the pair of substrate materials are immersed in the liquid, the substrate materials are superimposed on each other in the liquid, the substrate materials in their superimposed position are lifted from the liquid, and a portion of the liquid captured between the substrate materials is removed so as to bond the substrate materials together.

    摘要翻译： 通过将一对基板材料结合在一起而制造半导体基板，其中至少一个包括在其表面上具有或不具有绝缘层的半导体基板材料。 生产包括用合适的液体处理基板材料，使得一对基板材料浸入液体中，基板材料在液体中彼此重叠，基板材料叠加位置从液体中提起，并且 在衬底材料之间捕获的液体的一部分被去除，以将衬底材料粘合在一起。

    Process for production of semiconductor substrate
    38.
    发明授权
    Process for production of semiconductor substrate 有权
    半导体基板的制造方法

    公开(公告)号：US07148119B1

    公开(公告)日：2006-12-12

    申请号：US09161774

    申请日：1998-09-29

    申请人： Kiyofumi Sakaguchi ,  Takao Yonehara

    发明人： Kiyofumi Sakaguchi ,  Takao Yonehara

    IPC分类号： H01L23/12

    CPC分类号： H01L21/6835 ,  H01L21/76259 ,  H01L2221/68363

    摘要： A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

    摘要翻译： 提供了一种制造半导体衬底的方法，其包括在第一衬底上形成多孔层的步骤，在第一衬底的多孔层上形成无孔单晶半导体层，将无孔单晶层接合到第二衬底上， 在多孔层上的基底，去除第二基底上的多孔层，以及去除构成第一基底的多孔层。