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公开(公告)号：US20120248448A1
公开(公告)日：2012-10-04
申请号：US13444565
申请日：2012-04-11
IPC分类号： H01L29/786
CPC分类号： H01L27/1244 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/13629 , G02F2001/136295 , G02F2201/123 , G09G3/2007 , G09G3/36 , G09G2300/0426 , G09G2310/0235 , H01L27/0255 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/1274 , H01L27/3223 , H01L27/3262 , H01L27/3276 , H01L29/78663 , H01L29/78675 , H01L2227/323 , H01L2924/13069
摘要： An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even in a case that the insulating film provided between adjacent pixels is formed by a coating method, there is a problem that thin portions are partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.
摘要翻译： 设置在相邻像素之间的绝缘膜被称为堤，隔板，阻挡层，路堤等，并且设置在用于薄膜晶体管或电源线的源极布线或漏极布线的上方。 特别地，在这些布线的交叉部分设置在不同的层中，在其中形成比其他部分更大的台阶。 即使在通过涂布法形成相邻像素之间的绝缘膜的情况下，存在由于该步骤而部分地形成薄壁部分并且耐受压力降低的问题。 在本发明中，在大台阶部分附近设置虚拟材料，特别是布置在配线的交叉部分周围，以减轻形成在其上的不均匀。 上部绞线和下部布线以不对准的方式布置，以便不使端部对齐。
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公开(公告)号：US20110084266A1
公开(公告)日：2011-04-14
申请号：US12897419
申请日：2010-10-04
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/045 , H01L29/45 , H01L29/78606 , H01L29/78696
摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.
摘要翻译： 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。
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33.发明授权Device substrate, light emitting device and driving method of light emitting device 有权装置基板，发光装置及发光装置的驱动方法公开(公告)号：US07843408B2
公开(公告)日：2010-11-30
申请号：US10803190
申请日：2004-03-18
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译： 一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。
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公开(公告)号：US20090261337A1
公开(公告)日：2009-10-22
申请号：US11995224
申请日：2006-07-20
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78645 , H01L27/12 , H01L27/124 , H01L27/283 , H01L29/42384 , H01L29/78696
摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
摘要翻译： 本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。 在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区 渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。
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公开(公告)号：US07432529B2
公开(公告)日：2008-10-07
申请号：US11142275
申请日：2005-06-02
IPC分类号： H01L29/04
CPC分类号： H01L27/3244 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L29/78621 , H01L29/78627 , H01L51/5234 , H01L51/5253 , H01L2251/5315 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements.
摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。
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公开(公告)号：US09093402B2
公开(公告)日：2015-07-28
申请号：US13099804
申请日：2011-05-03
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。
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37.发明授权Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device 有权氧化物半导体膜的制造方法及半导体装置的制造方法公开(公告)号：US08748223B2
公开(公告)日：2014-06-10
申请号：US12888846
申请日：2010-09-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
发明人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
CPC分类号： H01L29/66742 , C23C14/086 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。
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公开(公告)号：US08651911B2
公开(公告)日：2014-02-18
申请号：US13034157
申请日：2011-02-24
IPC分类号： H01J1/62
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L51/5206 , H01L51/5253 , H01L2227/323
摘要： A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
摘要翻译： 本发明的发光装置包括：形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层，形成在第一电极和第一绝缘层上，并且由选自氧化硅，氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。
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公开(公告)号：US08526216B2
公开(公告)日：2013-09-03
申请号：US13546013
申请日：2012-07-11
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
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公开(公告)号：US08492758B2
公开(公告)日：2013-07-23
申请号：US12887646
申请日：2010-09-22
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
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