公开(公告)号：USRE38339E1

公开(公告)日：2003-12-02

申请号：US09590647

申请日：2000-06-08

申请人： Masakazu Ukita ,  Akira Ishibashi

发明人： Masakazu Ukita ,  Akira Ishibashi

IPC分类号： H01S532

CPC分类号： B82Y20/00 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/028 ,  H01S5/0421 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347

摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(&OHgr;) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature To(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/To)IthVth &bgr;≡(Rt/To)RSIth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((21n t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

公开(公告)号：US06438298B1

公开(公告)日：2002-08-20

申请号：US09616687

申请日：2000-07-14

申请人： Eriko Matsui ,  Akira Ishibashi ,  Yoshifumi Mori

发明人： Eriko Matsui ,  Akira Ishibashi ,  Yoshifumi Mori

IPC分类号： G02B626

CPC分类号： G02B6/2852 ,  G02B6/125

摘要： An optical device includes a plurality of first optical waveguides (or optical fibers) arranged in the horizontal direction; a plurality of second optical waveguides (or optical fibers) arranged on the same plane as the plane on which the first optical waveguides (or optical fibers) are arranged, the second optical waveguides (or optical fibers) being perpendicular or nearly perpendicular to the first optical waveguides (or optical fibers); and elements to be excited by light rays waveguided in the first and second optical waveguides(or optical fibers), the elements being arranged at crossing portions at which the first and second optical waveguides (or optical fibers) cross each other. In this display, the elements to be excited are selected for each line by intensities of light rays in the first optical waveguides (or optical fibers) functioning as horizontal waveguides (or optical fibers), and light rays in the second waveguides (or optical fibers) functioning as vertical waveguides (or optical fibers) are modulated in intensity on the basis of data signals, and the data signal light rays whose intensities have been modulated are extracted to the outside via the selected elements to be excited.

摘要翻译： 光学装置包括沿水平方向布置的多个第一光波导（或光纤）; 布置在与其上布置有第一光波导（或光纤）的平面相同的平面上的多个第二光波导（或光纤），第二光波导（或光纤）垂直于或几乎垂直于第一光波导 光波导（或光纤）; 以及要在第一和第二光波导（或光纤）中波导的光线激发的元件，元件布置在第一和第二光波导（或光纤）彼此交叉的交叉部分。 在该显示中，通过用作水平波导（或光纤）的第一光波导（或光纤）中的光线的强度，针对每一行选择要激发的元件，并且第二波导（或光纤）中的光线 ）作为垂直波导（或光纤）的功能在数据信号的基础上进行强度调制，并且已经调制了强度的数据信号光线经由被激励的选定元件提取到外部。

公开(公告)号：US5872023A

公开(公告)日：1999-02-16

申请号：US829214

申请日：1997-03-31

申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

公开(公告)号：US5625634A

公开(公告)日：1997-04-29

申请号：US275374

申请日：1994-07-15

申请人： Masakazu Ukita ,  Akira Ishibashi

发明人： Masakazu Ukita ,  Akira Ishibashi

IPC分类号： H01S5/00 ,  H01S5/024 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/323 ,  H01S5/327 ,  H01S5/343 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/024 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0421

摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (Q) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by:.alpha..ident.(R.sub.t /T.sub.0)I.sub.th v.sub.th.beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((2ln t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

摘要翻译： 半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层，有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q） 上升之后，具有热阻Rt（K / W）和特征温度T0（K）。 当α和β的两个量定义为：α=（Rt / T0）Ithvth beta =（Rt / T0）RSIth2点（α，β）存在于由直线α= 0，直线β= 0以及具有t作为参数的曲线（（2ln t-1）/ t，（1-ln t）/ t2）。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

公开(公告)号：US5247223A

公开(公告)日：1993-09-21

申请号：US723974

申请日：1991-07-01

申请人： Yoshifumi Mori ,  Akira Ishibashi

发明人： Yoshifumi Mori ,  Akira Ishibashi

IPC分类号： H01J9/02 ,  H01J21/10 ,  H01J1/30

CPC分类号： H01J21/105 ,  H01J9/025

摘要： A quantum interference semiconductor device using the interference effect of electron waves has a cathode, an anode, and a gate which are mounted in a vacuum. An electron wave which is emitted from the cathode into the vacuum is divided into a plurality of electron waves and, subsequently, the plurality of electron waves are combined at the anode. Phase differences among the plurality of electron waves are controlled by the gate, thereby making the device operative.

摘要翻译： 使用电子束的干涉效应的量子干涉半导体器件具有安装在真空中的阴极，阳极和栅极。 从阴极发射到真空中的电子波被分成多个电子波，随后在阳极处组合多个电子波。 多个电子波之间的相位差由栅极控制，从而使器件工作。

公开(公告)号：US5204588A

公开(公告)日：1993-04-20

申请号：US819492

申请日：1992-01-10

申请人： Ryuichi Ugajin ,  Akira Ishibashi

发明人： Ryuichi Ugajin ,  Akira Ishibashi

IPC分类号： H01J3/02 ,  H01J21/10 ,  H01L29/66 ,  H01L29/772 ,  H03K17/54

CPC分类号： B82Y10/00 ,  H01J21/105 ,  H01J3/022 ,  H01L29/66977 ,  H01L29/772 ,  H03K17/545

摘要： Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the electron waves; characterized in that the gate electrode has the construction of a capacitor.

公开(公告)号：US5053526A

公开(公告)日：1991-10-01

申请号：US511945

申请日：1990-04-16

申请人： Masakatsu Shibasaki ,  Mikiko Sodeoka ,  Yuji Ogawa ,  Toshiaki Mase ,  Akira Ishibashi ,  Daijiro Horii ,  Toshiji Kanayama ,  Katsuhiko Iseki ,  Masaki Shinoda ,  Chiyoko Ishiyama ,  Yoshio Hayashi

发明人： Masakatsu Shibasaki ,  Mikiko Sodeoka ,  Yuji Ogawa ,  Toshiaki Mase ,  Akira Ishibashi ,  Daijiro Horii ,  Toshiji Kanayama ,  Katsuhiko Iseki ,  Masaki Shinoda ,  Chiyoko Ishiyama ,  Yoshio Hayashi

IPC分类号： A61K31/557 ,  C07C405/00

CPC分类号： C07C405/0083 ,  A61K31/557

摘要： Disclosed is a pharmaceutical having circulation ameliorating effect and antiulcer effect containing a prostaglandin I.sub.2 analogue represented by the formula shown below or a non-toxic salt of its salt or a cyclodextrin inclusion compound thereof as the effective ingredient: ##STR1## wherein R.sup.1 represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms or a phenyl group; A represents a pentyl group, a cyclopentyl group, a cyclohexyl group, a 1-methyl-3-hexynyl group, a 2-methyl-3-hexynyl group, a 1-methylhexyl group, a 2-phenethyl group, a 1,1-dimethylpentyl group, a 2-methylpentyl group, a 1-cyclohexylethyl group, a 2-methylhexyl group, a 1-methyl-3-pentynyl group or 1 2,6-dimethyl-5-heptenyl group; the double bond between the carbon atoms at 4- and 5-positions is E or Z or a mixture thereof, the asymmetric center in the substituent represented by A is R-configuration or S-configuration or a mixture thereof.The pharmaceuticals containing, as an active ingredient, prostaglandin I.sub.2 analogues of the present invention have potent platelet aggregation inhibiting effect, blood pressure depressing effect, vasodilative effect and antiulcer effect, and are also low in toxicity.

摘要翻译： 本发明公开了一种具有循环改善作用和抗溃疡效果的药物，其含有下述式表示的前列腺素I2类似物或其盐的无毒性盐或其环糊精包合物作为有效成分：其中R1表示氢 原子，碳原子数1〜12的烷基，碳原子数4〜7的环烷基或苯基; A表示戊基，环戊基，环己基，1-甲基-3-己炔基，2-甲基-3-己炔基，1-甲基己基，2-苯乙基，1,1 2-甲基戊基，2-甲基戊基，1-环己基乙基，2-甲基己基，1-甲基-3-戊炔基或1,6-二甲基-5-庚烯基; 在4-和5-位碳原子之间的双键是E或Z或其混合物，由A表示的取代基中的不对称中心是R-构型或S-构型或其混合物。 含有本发明的前列腺素I2类似物作为活性成分的药物具有有效的血小板聚集抑制作用，降血压作用，血管扩张作用和抗溃疡作用，毒性也低。

公开(公告)号：US4937204A

公开(公告)日：1990-06-26

申请号：US293333

申请日：1989-01-04

申请人： Akira Ishibashi ,  Yoshifumi Mori ,  Masao Itabashi

发明人： Akira Ishibashi ,  Yoshifumi Mori ,  Masao Itabashi

IPC分类号： H01L29/80 ,  H01L21/205 ,  H01L29/15 ,  H01L29/68 ,  H01L29/737

CPC分类号： H01L29/155 ,  H01L29/7376 ,  Y10S148/011 ,  Y10S148/056 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/119 ,  Y10S148/16

摘要： A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fraction or a binary compound semiconductor layers are alternately and epitaxially grown and a main current direction is selected to be in the direction perpendicular to the laminae of said superlattice layers.

公开(公告)号：US4912882A

公开(公告)日：1990-04-03

申请号：US232832

申请日：1988-08-16

申请人： Hisao Makino ,  Akira Ishibashi

发明人： Hisao Makino ,  Akira Ishibashi

IPC分类号： B23Q17/00 ,  B29D30/68 ,  G01M1/38 ,  G01M17/02

CPC分类号： G01M17/024 ,  B29D2030/0635 ,  B29D2030/0638

摘要： A method of reducing the lateral force variation of a tire by grinding one of the shoulders of tire over a semicircle thereof and the other shoulder over a remaining semicircle in accordance with grinding amount and grinding position. In order to derive the grinding amount and grinding position, the lateral force is detected over one revolution of the tire to derive a measured waveform of the lateral force of the tire, the measured waveform is transformed to derive a factor waveform in the causation of the lateral force, while the first-order time lag of the tire is taken into account, and then the grinding amount and grinding position are determined from the thus derived factor waveform in the causation of the lateral force of the tire.

公开(公告)号：US4783992A

公开(公告)日：1988-11-15

申请号：US66440

申请日：1987-06-26

申请人： Akira Ishibashi

发明人： Akira Ishibashi

IPC分类号： G01M17/02

CPC分类号： G01M17/02

摘要： In a method of detecting an outer configuration of a side wall surface of an inflated tire, a distance between a sensor and the side wall surface is detected in a non-contact manner to derive a displacement signal, the displacement signal is converted into a digital displacement signal and successive peaks of the digital displacement signal are detected. Heights h.sub.n and distances l.sub.n between successive peak points are derived and areas AS.sub.n and BS.sub.n surrounded by the displacement signal and a rectangle whose corners are coincident with adjacent peak points are derived. The heights h.sub.n, distances l.sub.n are areas AS.sub.n, BS.sub.n are compared with threshold values h.sub.R, l.sub.R and AS.sub.R, BS.sub.R, respectively. When h.sub.n >h.sub.R, l.sub.n AS.sub.R or BS.sub.n >BS.sub.R, a relevant tire is judged to be inferior.

摘要翻译： 在检测充气轮胎的侧壁面的外部结构的方法中，以非接触的方式检测传感器与侧壁面之间的距离，得到位移信号，将位移信号转换为数字 检测位移信号和数字位移信号的连续峰值。 导出高度hn和连续峰值点之间的距离ln，导出由位移信号包围的区域ASn和BSn以及其角与相邻峰值点一致的矩形。 高度hn，距离ln是区域ASn，BSn分别与阈值hR，lR和ASR，BSR进行比较。 当hn> hR，ln ASR或BSn> BSR时，判断相关轮胎较差。