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159 条记录 (耗时 0.043 秒)

    Gate Structure, Semiconductor Device and Methods for Forming the Same
    36.
    发明申请
    Gate Structure, Semiconductor Device and Methods for Forming the Same 审中-公开
    门结构，半导体器件及其形成方法

    公开(公告)号：US20140015068A1

    公开(公告)日：2014-01-16

    申请号：US13699731

    申请日：2012-07-24

    申请人： Hong Yang ,  Wenwu Wang ,  Huaxiang Yin ,  Jiang Yan ,  Xueli Ma

    发明人： Hong Yang ,  Wenwu Wang ,  Huaxiang Yin ,  Jiang Yan ,  Xueli Ma

    IPC分类号： H01L29/49 ,  H01L21/28

    CPC分类号： H01L29/495 ,  H01L21/28008 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

    摘要： The disclosure relates to a gate structure, a semiconductor device and methods for forming the same. An embodiment of the disclosure provides a method for forming a gate structure, including: providing a substrate; forming an interface layer on the substrate; forming a gate dielectric layer on the interface layer; forming a gate dielectric capping layer on the gate dielectric layer; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming an oxygen scavenging element capping layer on the oxygen scavenging element layer; performing Post-Metallization Annealing; performing etching until the etching stop layer is exposed; forming a work function adjustment layer on the etching stop layer; and forming a gate layer on the work function adjustment layer.

    摘要翻译： 本公开涉及一种栅极结构，半导体器件及其形成方法。 本公开的实施例提供了一种用于形成栅极结构的方法，包括：提供基板; 在衬底上形成界面层; 在界面层上形成栅介电层; 在所述栅极电介质层上形成栅介电覆盖层; 在所述栅极电介质覆盖层上形成蚀刻停止层; 在所述蚀刻停止层上形成氧清除元件层; 在除氧元件层上形成氧清除元件盖层; 执行金属后退火; 进行蚀刻，直到蚀刻停止层露出为止; 在所述蚀刻停止层上形成功函数调整层; 以及在所述功函数调整层上形成栅极层。

    Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device
    37.
    发明申请
    Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device 有权
    形成栅极结构的方法，形成半导体器件的方法和半导体器件

    公开(公告)号：US20140015063A1

    公开(公告)日：2014-01-16

    申请号：US13699734

    申请日：2012-07-24

    申请人： Hong Yang ,  Xueli Ma ,  Wenwu Wang ,  Kai Han ,  Xiaolei Wang ,  Huaxiang Yin ,  Jiang Yan

    发明人： Hong Yang ,  Xueli Ma ,  Wenwu Wang ,  Kai Han ,  Xiaolei Wang ,  Huaxiang Yin ,  Jiang Yan

    IPC分类号： H01L21/8238 ,  H01L27/092

    CPC分类号： H01L21/8238 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092

    摘要： A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches.

    摘要翻译： 一种用于形成栅极结构的方法，包括：提供衬底，其中所述衬底包括nMOSFET区域和pMOSFET区域，nMOSFET区域和pMOSFET区域中的每一个具有栅极沟槽，并且每个栅极沟槽设置在 底部具有栅极电介质层; 在所述衬底上形成栅介电覆盖层; 在所述栅极电介质覆盖层上形成蚀刻停止层; 在所述蚀刻停止层上形成氧清除元件层; 在除氧元件层上形成第一功函数调整层; 蚀刻nMOSFET区域上方的第一功函数调整层; 在所述基板的表面上形成第二功函数调整层; 金属层沉积和退火以用金属层填充栅极沟槽; 以及去除栅极沟槽外的金属层。

    Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device
    38.
    发明申请
    Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device 审中-公开
    形成栅极结构的方法，形成半导体器件的方法和半导体器件

    公开(公告)号：US20140015062A1

    公开(公告)日：2014-01-16

    申请号：US13699732

    申请日：2012-07-24

    申请人： Hong Yang ,  Xueli Ma ,  Wenwu Wang ,  Kai Han ,  Xiaolei Wang ,  Huaxiang Yin ,  Jiang Yan

    发明人： Hong Yang ,  Xueli Ma ,  Wenwu Wang ,  Kai Han ,  Xiaolei Wang ,  Huaxiang Yin ,  Jiang Yan

    IPC分类号： H01L21/8238 ,  H01L27/092

    CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L27/092

    摘要： An embodiment of the present disclosure provides a method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on a surface of the substrate; forming an oxygen scavenging element layer on the gate dielectric capping layer; forming an etching stop layer on the oxygen scavenging element layer; forming a work function adjustment layer on the etching stop layer; performing metal layer deposition and annealing process to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches.

    摘要翻译： 本公开的实施例提供了一种用于形成栅极结构的方法，包括：提供衬底，其中衬底包括nMOSFET区域和pMOSFET区域，nMOSFET区域和pMOSFET区域中的每一个具有栅极沟槽，并且 栅极沟槽在底部设置有栅极电介质层; 在所述衬底的表面上形成栅介电覆盖层; 在所述栅介质顶盖层上形成氧清除元件层; 在除氧元件层上形成蚀刻停止层; 在所述蚀刻停止层上形成功函数调整层; 执行金属层沉积和退火工艺以用金属层填充栅极沟槽; 以及去除栅极沟槽外的金属层。