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    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
    33.
    发明申请
    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices 失效
    磁性分组存储器存储设备，包括这种设备的存储器系统以及控制这些设备的方法

    公开(公告)号：US20100208381A1

    公开(公告)日：2010-08-19

    申请号：US12658807

    申请日：2010-02-16

    Applicant: Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    Inventor： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    IPC: G11B19/02

    CPC classification number: G11C11/15 ,  G11C5/04

    Abstract: A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

    Abstract translation: 存储器件由将磁信息存储在磁结构的多个域中的磁结构构成。 写单元响应于控制信号向磁结构施加写入电流，将信息写入磁结构的多个域中的至少一个。 读取单元通过响应于控制信号向磁性结构施加读取电流，从磁性结构的多个域中的至少一个域读取信息。 畴壁移动控制单元耦合到磁结构的一部分，并且响应于控制信号将存储在磁结构中的多个域中的信息移动到磁结构中的其他区域。 写单元，读单元和域壁移动控制单元都耦合到提供控制信号的相同控制信号线。

    Data storage device having magnetic domain wall motion and method of forming the same
    37.
    发明申请
    Data storage device having magnetic domain wall motion and method of forming the same 失效
    具有磁畴壁运动的数据存储装置及其形成方法

    公开(公告)号：US20080137521A1

    公开(公告)日：2008-06-12

    申请号：US11984478

    申请日：2007-11-19

    Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

    Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

    IPC: G11B9/00

    CPC classification number: G11C11/15 ,  G11C19/0841

    Abstract: A data storage device using magnetic domain wall motion may include a first magnetic layer having a plurality of magnetic domains. A second magnetic layer may be connected to the first magnetic layer, and a connection layer may be disposed between the first and second magnetic layers. A resistive magnetic layer may be disposed between each of the first and second magnetic layers and the connection layer. Accordingly, when current is supplied to the data storage device to move a magnetic domain wall, the leakage of current in a connection between the magnetic layers may be reduced or prevented, thus conserving power.

    Abstract translation: 使用磁畴壁运动的数据存储装置可以包括具有多个磁畴的第一磁性层。 第二磁性层可以连接到第一磁性层，并且连接层可以设置在第一和第二磁性层之间。 电阻性磁性层可以设置在第一和第二磁性层和连接层中的每一个之间。 因此，当向数据存储装置提供电流以移动磁畴壁时，可以减少或防止磁层之间的连接中的电流泄漏，从而节省功率。

    Semiconductor device using magnetic domain wall movement and method of manufacturing the same
    38.
    发明申请
    Semiconductor device using magnetic domain wall movement and method of manufacturing the same 失效
    使用磁畴壁运动的半导体器件及其制造方法

    公开(公告)号：US20080094887A1

    公开(公告)日：2008-04-24

    申请号：US11727689

    申请日：2007-03-28

    Applicant: In-jun Hwang ,  Sung-chul Lee

    Inventor： In-jun Hwang ,  Sung-chul Lee

    IPC: G11C11/14

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    Abstract: A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.

    Abstract translation: 提供了使用磁畴壁移动的半导体器件和制造该半导体器件的方法。 半导体器件包括形成在基板上并具有多个磁畴的磁性层，以及提供能量以移动磁性层中的磁畴壁的单元。 磁性层与基板平行地形成，并且包括沿其长度方向交替形成的多个凸起和多个凹陷。 磁性层具有阶梯形状，其以一位为单位确保磁畴壁的可靠移动。

    Magnetic memory devices and methods of writing data to the same
    40.
    发明授权
    Magnetic memory devices and methods of writing data to the same 有权
    磁存储器件和数据写入方法

    公开(公告)号：US09236105B2

    公开(公告)日：2016-01-12

    申请号：US14184043

    申请日：2014-02-19

    Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

    Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

    IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

    Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

    Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

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