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    Photoresist System and Method
    31.
    发明申请
    Photoresist System and Method 审中-公开
    光刻胶系统和方法

    公开(公告)号：US20150086924A1

    公开(公告)日：2015-03-26

    申请号：US14559723

    申请日：2014-12-03

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chen-Hau Wu ,  Ching-Yu Chang

    IPC: G03F7/038

    CPC classification number: G03F7/038 ,  G03F7/0382 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

    Abstract: A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.

    Abstract translation: 提供了一种用于光致抗蚀剂的系统和方法。 在一个实施方案中，交联或偶联试剂包括在光致抗蚀剂组合物内。 交联或偶联试剂将与光致抗蚀剂组合物内的聚合物树脂反应，将聚合物交联或连接在一起，产生分子量较大的聚合物。 这种较大的分子量将导致光致抗蚀剂的溶解速率降低，导致该线更好的聚焦深度。

    Method and Apparatus for Planarization of Substrate Coatings
    32.
    发明申请
    Method and Apparatus for Planarization of Substrate Coatings 有权
    基材涂层平面化方法与装置

    公开(公告)号：US20140273509A1

    公开(公告)日：2014-09-18

    申请号：US13800627

    申请日：2013-03-13

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Wen-Yun Wang ,  Cheng-Han Wu ,  Yu-Chung Su ,  Ching-Yu Chang

    IPC: H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/67063 ,  B05B12/02 ,  B05B13/0228 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/67028 ,  H01L21/6715

    Abstract: Disclosed herein is a method of forming a coating, comprising applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the coating after planarizing the top surface of the first coating. The first coating may be applied over the plurality of topographical features, and substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating and a solvent applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The coating may have a planar surface prior to the drying the first coating and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating.

    Abstract translation: 本文公开了一种形成涂层的方法，包括将第一涂层施加到具有多个形貌特征的基底上，平面化第一涂​​层的顶表面，以及在平坦化第一涂层的顶表面之后干燥涂层。 第一涂层可以施加在多个形貌特征上，并且在施用期间基本上是液体的。 第一涂层可以任选地是基底的形貌特征上的保形涂层。 在平坦化第一涂层的顶表面和施加到保形涂层的溶剂之前，保形涂层可以被干燥，在施加溶剂之后，保形涂层的顶表面基本上是平面的。 在干燥第一涂层之前，涂层可以具有平坦的表面，并且可以通过改变第一涂层的环境来干燥第一涂层而无需实质的旋转干燥。

    Anti-Reflective Layer and Method
    33.
    发明申请
    Anti-Reflective Layer and Method 有权
    防反射层和方法

    公开(公告)号：US20140273457A1

    公开(公告)日：2014-09-18

    申请号：US14056737

    申请日：2013-10-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yu-Chung Su ,  Ching-Yu Chang ,  Wen-Yun Wang

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/22 ,  G03F7/091 ,  G03F7/40 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/0276 ,  H01L21/31111

    Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.

    Abstract translation: 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动部件，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动区域。 漂浮的组分可以是漂浮的交联剂，漂浮的聚合物树脂或漂浮的催化剂。 浮动交联剂，漂浮聚合物树脂或浮动催化剂可以包含氟原子。

    MIDDLE LAYER COMPOSITION FOR TRILAYER PATTERNING STACK
    34.
    发明申请
    MIDDLE LAYER COMPOSITION FOR TRILAYER PATTERNING STACK 有权
    三层堆叠堆叠中层组合物

    公开(公告)号：US20140272709A1

    公开(公告)日：2014-09-18

    申请号：US14014185

    申请日：2013-08-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Chen-Yu Liu ,  Ching-Yu Chang

    IPC: G03F7/09 ,  G03F7/20

    CPC classification number: G03F7/092 ,  G03F7/0045 ,  G03F7/095 ,  G03F7/11 ,  G03F7/20

    Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a middle layer (ML) of a patterning stack (e.g., a tri-layer patterning stack such as a tri-layer resist) and forming a photoresist layer directly on the middle layer. The middle layer includes an additive component having a photo base generator (PBG). The substrate including the photoresist layer and the middle layer is then exposed to a radiation. A covalent bond between the ML and the photoresist layer may be formed.

    Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括形成图案化叠层的中间层（ML）（例如三层图案化叠层，例如三层抗蚀剂），并直接在中间层上形成光致抗蚀剂层。 中间层包括具有光源产生器（PBG）的添加剂组分。 然后将包括光致抗蚀剂层和中间层的基板暴露于辐射。 可以形成ML和光致抗蚀剂层之间的共价键。

    Photo-Resist with Floating Acid
    35.
    发明申请
    Photo-Resist with Floating Acid 有权
    耐光浮选

    公开(公告)号：US20140255850A1

    公开(公告)日：2014-09-11

    申请号：US13791992

    申请日：2013-03-09

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Ching-Yu Chang ,  Ming-Feng Shieh ,  Wen-Hung Tseng

    IPC: G03F7/004

    CPC classification number: G03F7/0045 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/32 ,  H01L21/0274

    Abstract: A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.

    Abstract translation: 一种制造半导体产品的方法包括将光致抗蚀剂层施加到基底上，所述光致抗蚀剂层在光致抗蚀剂层的上部比在光致抗蚀剂层的下部具有更高的酸浓度。 该方法还包括通过包括特征的掩模将光致抗蚀剂层暴露于光源，该光致抗蚀剂层包括将扩散到受特征影响的光致抗蚀剂层的区域中的浮动扩散酸，而不是 扩散到由掩模形成的特征中。

    Patterning Process and Chemical Amplified Photoresist Composition
    36.
    发明申请
    Patterning Process and Chemical Amplified Photoresist Composition 有权
    图案化工艺和化学放大光刻胶组合物

    公开(公告)号：US20140134538A1

    公开(公告)日：2014-05-15

    申请号：US14080430

    申请日：2013-11-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang

    IPC: G03F7/038

    CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

    Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer., and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about. 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.

    Abstract translation: 光刻方法包括在基板上形成感光层，曝光感光层，烘烤感光层，以及显影曝光的感光层。 感光层包括响应于与酸的反应而变成可溶于碱溶液的聚合物，响应于辐射能而分解形成酸的多个光酸发生剂（PAG），和多个具有沸点分布的猝灭剂 约200℃至约。 淬灭剂还具有分布在300道尔顿和约20000道尔顿之间的分子量，并且垂直分布在感光层中，使得感光层顶部的第一浓度C1大于底部的第二浓度C2 感光层的一部分。

    Method of manufacturing a semiconductor device
    37.
    发明授权
    Method of manufacturing a semiconductor device 有权

    公开(公告)号：US12300507B2

    公开(公告)日：2025-05-13

    申请号：US18438047

    申请日：2024-02-09

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yen-Hao Chen ,  Wei-Han Lai ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/321

    Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

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