公开(公告)号：US20160013061A1

公开(公告)日：2016-01-14

申请号：US14858227

申请日：2015-09-18

Applicant: Texas Instruments Incorporated

Inventor： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC: H01L21/28 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

Abstract translation: 可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。 氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。 维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

公开(公告)号：US08822236B2

公开(公告)日：2014-09-02

申请号：US13949581

申请日：2013-07-24

Applicant: Texas Instruments Incorporated

Inventor： Bo-Yang Lin ,  Yen Lee ,  Haowen Bu ,  Mark Robert Visokay

IPC: H01L21/00 ,  H01L49/02 ,  H01L27/115 ,  H01L21/02

CPC classification number: H01L21/02225 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57

Abstract: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

Abstract translation: 通过等离子体增强化学气相沉积（PECVD）沉积氮化硅的无氨方法。 将硅烷（SiH4）和氮（N2）的源气体提供给平行板等离子体反应器，其中能量电容耦合到等离子体，并且其中正在处理的晶片已经被放置在支撑电极处。 将低频RF能量（例如，360kHz）施加到支撑电极; 可选地，将高频RF能量（例如，13.56MHz）提供给并联电极。 工艺温度高于350℃，压力约为2.5托。 存在于所得氮化硅膜中的任何氢由N-H键而不是Si-H键结合，因此与膜更牢固地结合。 氮化硅可用作铁电材料的钝化剂，如果被氢气污染，则可能会电解。

公开(公告)号：US20140225226A1

公开(公告)日：2014-08-14

申请号：US14169120

申请日：2014-01-30

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Brian E. Goodlin ,  Haowen Bu ,  Mark Visokay

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/409 ,  C23C18/1216 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02263 ,  H01L28/56

Abstract: Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in combination with an oxidizing gas. Following deposition of the PZT material at the low flow rate, the remainder of the PZT film is deposited at a high deposition rate, attained by changing one or more of precursor and solvent flow rate, oxygen concentration in the oxidizing gas, A/B ratio of the precursors, temperature, and the like.

Abstract translation: 钛酸锆（PZT）铁电材料的多步沉积。 PZT材料的初始部分通过金属有机化学气相沉积（MOCVD）以低沉积速率沉积，例如在低于约640℃的温度下从铅，锆和钛的汽化液体前体和溶剂中沉积 与约1.1ml / min的组合流速与氧化气体组合。 在PZT材料以低流速沉积之后，PZT膜的其余部分以高沉积速率沉积，通过改变前体和溶剂流速，氧化气体中的氧浓度，A / B比 的前体，温度等。

公开(公告)号：US20130309783A1

公开(公告)日：2013-11-21

申请号：US13949581

申请日：2013-07-24

Applicant: Texas Instruments Incorporated

Inventor： Bo-Yang Lin ,  Yen Lee ,  Haowen Bu ,  Mark Robert Visokay

IPC: H01L21/02

CPC classification number: H01L21/02225 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57

Abstract: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

Abstract translation: 通过等离子体增强化学气相沉积（PECVD）沉积氮化硅的无氨方法。 将硅烷（SiH 4）和氮（N 2）的源气体提供给平行板等离子体反应器，其中能量电容耦合到等离子体，并且其中正在处理的晶片已经被放置在支撑电极处。 将低频RF能量（例如，360kHz）施加到支撑电极; 可选地，将高频RF能量（例如，13.56MHz）提供给并联电极。 工艺温度高于350℃，压力约为2.5托。 存在于所得氮化硅膜中的任何氢由N-H键而不是Si-H键结合，因此与膜更牢固地结合。 氮化硅可用作铁电材料的钝化剂，如果被氢气污染，则可能会电解。