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公开(公告)号:US11171636B2
公开(公告)日:2021-11-09
申请号:US16585155
申请日:2019-09-27
Applicant: Texas Instruments Incorporated
Inventor: Tolga Dinc , Salvatore Luciano Finocchiaro , Gerd Schuppener , Siraj Akhtar , Swaminathan Sankaran , Baher Haroun
Abstract: Methods, apparatus, systems and articles of manufacture are disclosed to provide phase imbalance correction. An example system includes a phase detector to obtain a first signal and generate a first output, a comparator coupled to the phase detector, the comparator to generate a second output based on the first output, and an amplifier coupled to the comparator, the amplifier to adjust a first phase response of the first signal based on the second output.
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公开(公告)号:US11128023B2
公开(公告)日:2021-09-21
申请号:US16716642
申请日:2019-12-17
Applicant: Texas Instruments Incorporated
Inventor: Hassan Omar Ali , Juan Alejandro Herbsommer , Benjamin Stassen Cook , Vikas Gupta , Athena Lin , Swaminathan Sankaran
Abstract: A device includes a multilayer substrate having a first surface and a second surface opposite the first surface. An integrated circuit is mounted on the second surface of the multilayer substrate, the integrated circuit having transmission circuitry configured to process millimeter wave signals. A substrate waveguide having a substantially solid wall is formed within a portion of the multilayer substrate perpendicular to the first surface. The substrate waveguide has a first end with the wall having an edge exposed on the first surface of the multilayer substrate. A reflector is located in one of the layers of the substrate and is coupled to an edge of the wall on an opposite end of the substrate waveguide.
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公开(公告)号:US20210203331A1
公开(公告)日:2021-07-01
申请号:US16731800
申请日:2019-12-31
Applicant: Texas Instruments Incorporated
Inventor: Salvatore Luciano Finocchiaro , Timothy Schmidl , Tolga Dinc , Gerd Schuppener , Siraj Akhtar , Swaminathan Sankaran , Baher Haroun
Abstract: In described examples, a method of operating a transceiver with a transmitter and a receiver includes generating a frequency reference. In the transmitter: A phase locked loop (PLL) generates a first voltage controlled oscillator (VCO) control voltage responsive to the frequency reference. A VCO in the transmitter generates a transmitter VCO signal responsive to the first VCO control voltage, and the PLL is locked to the transmitter VCO signal. In the receiver: A signal is received. A receiver VCO generates a receiver VCO signal responsive to the first or a second VCO control voltage. The receiver VCO signal is multiplied by the received signal to generate an I component, and by the received signal phase shifted by 90° to generate a Q component. The second VCO control signal is generated responsive to the I component and the Q component.
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公开(公告)号:US10979277B1
公开(公告)日:2021-04-13
申请号:US16731823
申请日:2019-12-31
Applicant: Texas Instruments Incorporated
Inventor: Timothy Mark Schmidl , Swaminathan Sankaran , Gerd Schuppener , Salvatore Luciano Finocchiaro , Siraj Akhtar , Tolga Dinc , Anand Ganesh Dabak , Baher Haroun
Abstract: In described examples, a method of operating a transmitter includes generating a frequency reference signal having a reference frequency and outputting the frequency reference to a phase locked loop (PLL) that includes a voltage controlled oscillator (VCO). The VCO output is locked to the frequency reference signal to form a carrier signal. The transmitter receives an I input signal, a Q input signal, and a direct current (DC) leaky carrier signal. Either the I input signal or the Q input signal is added to the leaky carrier signal. The carrier signal is modulated with the resulting two signals using an I-Q mixer to generate a modulated signal that includes an unmodulated carrier signal component. The modulated signal is then transmitted.
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公开(公告)号:US10775422B2
公开(公告)日:2020-09-15
申请号:US15695651
申请日:2017-09-05
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Adam Joseph Fruehling , Juan Alejandro Herbsommer , Benjamin Stassen Cook , Swaminathan Sankaran
Abstract: A device includes a substrate that includes a resonant cavity. The resonant cavity includes a plurality of dipolar molecules that have an absorption frequency. The resonant cavity resonates at a frequency that is equal to the absorption frequency of the dipolar molecules. The device further includes a first port on the resonant cavity configured to receive a radio frequency (RF) signal.
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公开(公告)号:US10763833B2
公开(公告)日:2020-09-01
申请号:US16235291
申请日:2018-12-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Ernst Gerog Muellner , Tobias Fritz , Bradley Kramer , Swaminathan Sankaran , Baher Haroun , Ralf Brederlow
Abstract: In described examples, a ring oscillator includes a series of N stages in a first ring. Each stage includes a respective output terminal coupled to a respective input terminal of a next one of the stages in the first ring. N is a positive odd-numbered integer of at least three. A series of N level shifters in a second ring are respectively connected to the N stages. Each level shifter receives a respective clock output from a respective output terminal of a stage to which it is connected and generates a respective boosted clock output in response thereto. The boosted clock output is coupled to control an impedance state of a next one of the level shifters in the second ring.
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公开(公告)号:US20200235786A1
公开(公告)日:2020-07-23
申请号:US16844861
申请日:2020-04-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Mark William Morgan , Swaminathan Sankaran , Benjamin Stassen Cook , Ali Djabbari , Lutz Albrecht Naumann
Abstract: A removable module includes circuitry, a near field communication (NFC) coupler to provide a data signal to the circuitry, and a second NFC coupler to supply operating voltage to the circuitry.
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公开(公告)号:US10594162B2
公开(公告)日:2020-03-17
申请号:US15292156
申请日:2016-10-13
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Bharadvaj Bhamidipati , Swaminathan Sankaran , Mark W. Morgan , Gregory E. Howard , Bradley A. Kramer
Abstract: A system on a package (SOP) can include a galvanic isolator. The galvanic isolator can include an input stage configured to transmit an input RF signal in response to receiving an input modulated signal. The galvanic isolator can also include a resonant coupler electrically isolated from the input stage by a dielectric. The resonant coupler can be configured to filter the input RF signal and transmit an output RF signal in response to the input RF signal. The galvanic isolator can further include an output stage electrically isolated from the resonant coupler by the dielectric. The output stage can be configured to provide an output modulated signal in response to receiving the output RF signal.
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公开(公告)号:US20200076374A1
公开(公告)日:2020-03-05
申请号:US16557571
申请日:2019-08-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Siraj Akhtar , Swaminathan Sankaran
Abstract: In an example apparatus, a first transistor has a base terminal, a first current terminal and a second current terminal. The base terminal is coupled to an input voltage node. A second transistor has a control terminal, a third current terminal and a fourth current terminal. The third current terminal is coupled to the second current terminal. The fourth current terminal is coupled to a first resistor. A second resistor is coupled to the control terminal. An inductor is coupled between the first resistor and a ground terminal.
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公开(公告)号:US10461075B2
公开(公告)日:2019-10-29
申请号:US14864538
申请日:2015-09-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Russell Carlton McMullan , Binu Kamblath Pushkarakshan , Subramanian J. Narayan , Swaminathan Sankaran , Keith Edmund Kunz
IPC: H01L23/522 , H01L27/06 , H01L49/02 , H01L27/08 , H01L29/66 , H01L29/872
Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.
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