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    COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
    31.
    发明申请
    COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME 有权

    公开(公告)号：US20250006739A1

    公开(公告)日：2025-01-02

    申请号：US18345467

    申请日：2023-06-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Ming Lin ,  Chun-I Wu ,  Tsung-Kai Chiu ,  Wei-Yen Woon ,  Szuya Liao

    IPC: H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775

    Abstract: A method of forming a complementary field-effect transistor (CFET) device includes: forming a plurality of channel regions stacked vertically over a fin; forming an isolation structure between a first subset of the plurality of channel regions and a second subset of the plurality of channel regions; forming a gate dielectric material around the plurality of channel regions and the isolation structure; forming a work function material around the gate dielectric material; forming a silicon-containing passivation layer around the work function material; after forming the silicon-containing passivation layer, removing a first portion of the silicon-containing passivation layer disposed around the first subset of the plurality of channel regions and keeping a second portion of the silicon-containing passivation layer disposed around the second subset of the plurality of channel regions; and after removing the first portion of the silicon-containing passivation layer, forming a gate fill material around the plurality of channel regions.

    Self-aligned metal compound layers for semiconductor devices
    38.
    发明授权
    Self-aligned metal compound layers for semiconductor devices 有权

    公开(公告)号：US11139397B2

    公开(公告)日：2021-10-05

    申请号：US16572255

    申请日：2019-09-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Ming Lin ,  Sai-Hooi Yeong ,  Ziwei Fang ,  Chi On Chui ,  Huang-Lin Chao

    IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66

    Abstract: The present disclosure relates to methods for forming a semiconductor device. The method includes forming a substrate and forming first and second spacers on the substrate. The method includes depositing first and second self-assembly (SAM) layers respectively on sidewalls of the first and second spacers and depositing a layer stack on the substrate and between and in contact with the first and second SAM layers. Depositing the layer stack includes depositing a ferroelectric layer and removing the first and second SAM layers. The method further includes depositing a metal compound layer on the ferroelectric layer. Portions of the metal compound layer are deposited between the ferroelectric layer and the first or second spacers. The method also includes depositing a gate electrode on the metal compound layer and between the first and second spacers.

    Fabrication of field effect transistors with ferroelectric materials
    39.
    发明授权
    Fabrication of field effect transistors with ferroelectric materials 有权

    公开(公告)号：US11031490B2

    公开(公告)日：2021-06-08

    申请号：US16454854

    申请日：2019-06-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Ming Lin ,  Sai-Hooi Yeong ,  Chi On Chui ,  Ziwei Fang ,  Huang-Lin Chao

    IPC: H01L29/66 ,  H01L29/51 ,  H01L21/02

    Abstract: A method of forming a semiconductor device includes forming a sacrificial layer on sidewalls of gate spacers disposed over a semiconductor layer, forming a first hafnium-containing gate dielectric layer over the semiconductor layer in a first trench disposed between the gate spacers, removing the sacrificial layer to form a second trench between the gate spacers and the first hafnium-containing gate dielectric layer, forming a second hafnium-containing gate dielectric layer over the first hafnium-containing gate dielectric layer and on the sidewalls of the gate spacers, annealing the first and the second hafnium-containing gate dielectric layers while simultaneously applying an electric field, and subsequently forming a gate electrode over the annealed first and second hafnium-containing gate dielectric layers.

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