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31.发明授权Surface emitting semiconductor laser, and method and apparatus for fabricating the same 有权表面发射半导体激光器及其制造方法和装置公开(公告)号：US07078257B2
公开(公告)日：2006-07-18
申请号：US10384607
申请日：2003-03-11
申请人： Akira Sakamoto , Hideo Nakayama , Yasuaki Miyamoto , Jun Sakurai
发明人： Akira Sakamoto , Hideo Nakayama , Yasuaki Miyamoto , Jun Sakurai
IPC分类号： H01L21/00
CPC分类号： H01S5/18311 , H01S5/18358 , H01S5/2086
摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.
摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。
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公开(公告)号：US20050238076A1
公开(公告)日：2005-10-27
申请号：US10978487
申请日：2004-11-02
申请人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
发明人： Yasuaki Kuwata , Hideo Nakayama , Akemi Murakami , Ryoji Ishii
CPC分类号： H01S5/0261 , H01S5/06825 , H01S5/18313 , H01S5/305 , H01S5/3054
摘要： A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.
摘要翻译： 半导体激光装置包括基板，垂直腔表面发射半导体激光二极管（VCSEL），分别包括第一和第二导电类型的第一和第二反射镜层，第一和第二反射镜层之间的有源区， 分别与第一和第二镜层电连接的第一和第二电极层和分别包括第一和第二导电类型的第一和第二半导体区域的至少一个齐纳二极管以及与第一和第二电极层电连接的第三和第四电极层 第一和第二半导体区域。 第二半导体区域形成在第一半导体区域的一部分中并与第一半导体区域形成PN结。 在衬底上形成VCSEL和齐纳二极管。 第一和第二电极层分别与第四和第三电极层电连接。
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公开(公告)号：US20050180476A1
公开(公告)日：2005-08-18
申请号：US11105450
申请日：2005-04-14
申请人： Akira Sakamoto , Hideo Nakayama , Yasuaki Miyamoto , Jun Sakurai
发明人： Akira Sakamoto , Hideo Nakayama , Yasuaki Miyamoto , Jun Sakurai
CPC分类号： H01S5/18311 , H01S5/18358 , H01S5/2086
摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.
摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。
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公开(公告)号：US06814501B2
公开(公告)日：2004-11-09
申请号：US10292454
申请日：2002-11-13
申请人： Tsutomu Hamada , Shinya Kyozuka , Tomo Baba , Hideo Nakayama
发明人： Tsutomu Hamada , Shinya Kyozuka , Tomo Baba , Hideo Nakayama
IPC分类号： G02B636
CPC分类号： G02B6/4249
摘要： A light-emitting device includes 16 vertical-cavity surface-emitting laser diodes (VCSELs) disposed like a 4×4 grid, for example, in a sufficiently narrower range than the end surface of an optical fiber. The 16 VCSELs disposed in the light-emitting device emit optical signals in the same direction. Since the VCSELs are disposed with a concentration in the sufficiently narrower range than the end surface of the optical fiber as described above, if the optical signals emitted from the VCSELs are spread, almost all optical signals generated by the light-emitting device are incident on the end surface of the optical fiber and are transmitted through the optical fiber.
摘要翻译： 发光器件包括16个垂直腔表面发射激光二极管（VCSEL），其布置成像4×4栅格，例如在比光纤的端面足够窄的范围内。 布置在发光器件中的16个VCSEL发射相同方向的光信号。 由于如上所述，VCSEL的浓度比光纤的端面足够窄的范围进行配置，所以如果从VCSEL发射的光信号扩散，则由发光装置产生的几乎所有的光信号入射到 光纤的端面并通过光纤传输。
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35.发明授权Semiconductor laser device and driving method for the same as well as tracking servo system employing the same 失效半导体激光器件及其驱动方法以及使用其的跟踪伺服系统
公开(公告)号：US5533042A
公开(公告)日：1996-07-02
申请号：US317594
申请日：1994-10-03
申请人： Hideki Fukunaga , Kaoru Yasukawa , Hideo Nakayama , Nobuaki Ueki , Hiromi Otoma , Mario Fuse
发明人： Hideki Fukunaga , Kaoru Yasukawa , Hideo Nakayama , Nobuaki Ueki , Hiromi Otoma , Mario Fuse
CPC分类号： G11B7/127 , G11B7/0901 , H01S5/0425 , H01S5/20 , H01S5/06243 , H01S5/4031
摘要： A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.
摘要翻译： 公开了一种允许高速校正光盘上的激光点位置的半导体激光器件。 半导体激光器件包括在向其提供电流时使激光束振荡的有源层，以及用于改变有源层中的电流密度分布的多个独立电极，以改变激光束的发射强度分布 半导体激光装置的紧急面。 利用半导体激光装置，通过从多个独立电极分别供给电流来改变有源层中的电流密度分布，可以通过半导体激光器的直接调制在数十MHz的频带内修正光束位置 设备。 还公开了半导体激光器件的驱动方法和其中结合半导体激光器件的跟踪伺服系统。
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公开(公告)号：US5491709A
公开(公告)日：1996-02-13
申请号：US106700
申请日：1993-08-16
申请人： Yasuji Seko , Hiromi Otoma , Nobuaki Ueki , Hideki Fukunaga , Hideo Nakayama , Kiichi Ueyanagi , Yasuhiro Shiraki
发明人： Yasuji Seko , Hiromi Otoma , Nobuaki Ueki , Hideki Fukunaga , Hideo Nakayama , Kiichi Ueyanagi , Yasuhiro Shiraki
CPC分类号： B82Y20/00 , H01S5/32325 , H01S5/34326 , H01S5/2009 , H01S5/3211 , H01S5/3406 , H01S5/3407
摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.
摘要翻译： 在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有 比有源层低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格 与底物匹配。 为此，可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。
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公开(公告)号：US08274589B2
公开(公告)日：2012-09-25
申请号：US12662073
申请日：2010-03-30
申请人： Hideo Nakayama
发明人： Hideo Nakayama
摘要： A DA converter includes: an analog signal output section that generates an output current and a non-output current according to a value of a digital input signal in response to a gain control signal supplied to adjust gain, and that outputs an analog signal produced by current-voltage conversion of the output current and causes the non-output current to flow to a reference potential; a gain control signal generating section that generates a gain current and a non-select current according to a value of a digital gain control signal, and that generates the gain control signal by current-voltage conversion of the gain current and supplies the gain control signal to the analog signal output section; and a correction current generating section that generates, based on the non-select current of the gain control signal generating section, a correction current that complements an amount of current fluctuation due to changes in gain settings in the gain control signal generating section, and that causes the correction current to flow to the reference potential.
摘要翻译： DA转换器包括：模拟信号输出部分，响应于提供的用于调节增益的增益控制信号，根据数字输入信号的值产生输出电流和非输出电流，并且输出由 输出电流的电流 - 电压转换，并使非输出电流流向参考电位; 增益控制信号产生部分，根据数字增益控制信号的值产生增益电流和非选择电流，并通过电流 - 电压转换增益电流产生增益控制信号，并将增益控制信号 到模拟信号输出部分; 以及校正电流产生部，其基于所述增益控制信号生成部的非选择电流生成补偿电流，所述校正电流补充由于所述增益控制信号生成部中的增益设定的变化引起的电流变动量， 导致校正电流流向参考电位。
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公开(公告)号：US07700955B2
公开(公告)日：2010-04-20
申请号：US11982930
申请日：2007-11-06
申请人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
发明人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
CPC分类号： H01L27/15 , H01L31/173 , H01L33/38
摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.
摘要翻译： 半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。 光学功能部分执行发光或光接收。 半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。 半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。
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公开(公告)号：US20080224167A1
公开(公告)日：2008-09-18
申请号：US11982930
申请日：2007-11-06
申请人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
发明人： Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173 , H01L33/38
摘要： A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.
摘要翻译： 半导体器件包括衬底，形成在衬底上的半导体层和通过使用半导体层的至少一部分形成的光学功能部分。 光学功能部分执行发光或光接收。 半导体器件还包括与光学功能部分的表面上的半导体层电连接的第一驱动电极，第一驱动电极驱动光学功能部分。 半导体器件还包括封装电极，其形成在半导体层上以围绕光学功能部分的周围，并且电连接到第一驱动电极。
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公开(公告)号：US20070019960A1
公开(公告)日：2007-01-25
申请号：US11319702
申请日：2005-12-29
IPC分类号： H04B10/00
CPC分类号： H04B10/0799 , G02B6/32 , G02B6/4206 , H04B10/114
摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.
摘要翻译： 一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜 保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束 从半导体发光元件。 半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。
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