公开(公告)号：US08916904B2

公开(公告)日：2014-12-23

申请号：US13752781

申请日：2013-01-29

申请人： Hironao Shinohara ,  Kensuke Hirano

发明人： Hironao Shinohara ,  Kensuke Hirano

IPC分类号： H01L33/00 ,  H01L31/02 ,  H01L31/0304

CPC分类号： H01L31/02 ,  B23K26/0622 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L31/03044 ,  H01L33/0095 ,  H01L33/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2924/00014

摘要： In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.

摘要翻译： 在具有蓝宝石衬底的半导体发光元件和层叠在蓝宝石衬底上的下半导体层和上半导体层的蓝宝石衬底包括衬底顶表面，衬底底表面，第一衬底侧表面和第二衬底侧表面 ; 多个第一切口和多个第二切口设置在第一基板侧表面和基板顶表面之间以及第二基板侧表面和基板顶表面之间的边界部分处; 下半导体层包括下半导体底表面，下半导体顶表面，第一下半导体侧表面和第二下半导体侧表面; 多个第一突出部分和多个第一按压部分设置在第一下半导体侧表面上; 并且多个第二突出部分和第二平坦部分设置在第二下部半导体侧表面上。

公开(公告)号：US08421107B2

公开(公告)日：2013-04-16

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US08258541B2

公开(公告)日：2012-09-04

申请号：US12097139

申请日：2006-12-13

申请人： Noritaka Muraki ,  Hironao Shinohara

发明人： Noritaka Muraki ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/38

摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

摘要翻译： 一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。 氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化 表面衍生自球形微粒。

公开(公告)号：US07968361B2

公开(公告)日：2011-06-28

申请号：US12295206

申请日：2007-03-30

申请人： Hiroshi Osawa ,  Hironao Shinohara

发明人： Hiroshi Osawa ,  Hironao Shinohara

IPC分类号： H01L21/66

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

摘要翻译： 提供一种发光特性和发光效率优异的氮化镓系化合物半导体发光元件的制造方法。 在这种制造氮化镓基化合物半导体发光器件的方法中，其是至少具有缓冲层的GaN基半导体发光器件的制造方法，n型半导体层，发光层和 p型半导体层在其上形成由凸形和凹形形成的不均匀图案的半透明基板上，缓冲层通过在具有枢转磁控管磁路和缓冲层的装置中进行的溅射法形成 含有AlN，ZnO，Mg或Hf。

公开(公告)号：US20110095327A1

公开(公告)日：2011-04-28

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US20100230714A1

公开(公告)日：2010-09-16

申请号：US12293639

申请日：2007-03-23

申请人： Hironao Shinohara ,  Noritaka Muraki ,  Hiroshi Osawa

发明人： Hironao Shinohara ,  Noritaka Muraki ,  Hiroshi Osawa

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer 13, a light emitting layer 14, and a first p-type semiconductor layer 15 which are formed of a gallium nitride based compound semiconductor are laminated in this order on a substrate 11; and a second crystal growth step in which a second p-type semiconductor layer 16 formed of a gallium nitride based compound semiconductor is further laminated thereon; and also has an uneven pattern forming step in which an uneven pattern is formed on the surface of the first p-type semiconductor layer 15 before the first crystal growth step and after the second crystal growth step; and a heat treatment step in which a heat treatment is carried out after the uneven pattern forming step.

摘要翻译： 一种氮化镓系化合物半导体发光元件的制造方法，其在发光效率方面优异且能够以低驱动电压工作，氮化镓系化合物半导体发光元件和使用该装置的灯 并且用于制造氮化镓基化合物半导体发光器件的方法包括：第一晶体生长步骤，其中n型半导体层13，发光层14和第一p型半导体层15是 由氮化镓系化合物半导体构成的层叠体依次层叠在基板11上; 以及第二晶体生长步骤，其中由氮化镓基化合物半导体形成的第二p型半导体层16进一步层压在其上; 并且还具有在第一晶体生长步骤之前和第二晶体生长步骤之后在第一p型半导体层15的表面上形成凹凸图案的不均匀图案形成步骤; 以及在不均匀图案形成工序之后进行热处理的热处理工序。

公开(公告)号：US20100025684A1

公开(公告)日：2010-02-04

申请号：US12515157

申请日：2007-12-19

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the method including: a substrate processing step of forming, on the (0001) C-plane of the substrate (101), a plurality of convex parts (12) of surfaces (12c) not parallel to the C-plane, to thereby form, on the substrate, an upper surface (10) that is composed of the convex parts (12) and a flat surface (11) of the C-plane; and an epitaxial step of epitaxially growing the group III nitride semiconductor layer (103) on the upper surface (10), to thereby embed the convex parts (12) in the group III nitride semiconductor layer (103).

摘要翻译： 本发明是一种在基板（101）上形成单晶III族氮化物半导体层（103）的III族氮化物半导体层的制造方法，该方法包括：基板处理工序，在（ 0001），基板（101）的C面，与C面不平行的多个表面（12c）的凸部（12），由此在基板上形成上表面（10），所述上表面 的凸起部分（12）和所述C平面的平坦表面（11）; 以及在所述上表面（10）上外延生长所述III族氮化物半导体层（103）的外延步骤，从而将所述凸部（12）嵌入所述III族氮化物半导体层（103）中。

公开(公告)号：US20090267103A1

公开(公告)日：2009-10-29

申请号：US12065564

申请日：2006-09-05

申请人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

发明人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0062 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2933/0091 ,  H01L2924/00014

摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.

摘要翻译： 本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。 从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15， 层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

公开(公告)号：US20090114933A1

公开(公告)日：2009-05-07

申请号：US12295206

申请日：2007-03-30

申请人： Hiroshi Osawa ,  Hironao Shinohara

发明人： Hiroshi Osawa ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

摘要翻译： 提供一种发光特性和发光效率优异的氮化镓系化合物半导体发光元件的制造方法。 在这种制造氮化镓基化合物半导体发光器件的方法中，其是至少具有缓冲层的GaN基半导体发光器件的制造方法，n型半导体层，发光层和 p型半导体层在其上形成由凸形和凹形形成的不均匀图案的半透明基板上，缓冲层通过在具有枢转磁控管磁路和缓冲层的装置中进行的溅射法形成 含有AlN，ZnO，Mg或Hf。