公开(公告)号：US06699697B2

公开(公告)日：2004-03-02

申请号：US09780630

申请日：2001-02-12

申请人： Kathryn G. Klemic ,  James F. Klemic ,  Mark A. Reed ,  Frederick J. Sigworth

发明人： Kathryn G. Klemic ,  James F. Klemic ,  Mark A. Reed ,  Frederick J. Sigworth

IPC分类号： C12N1300

CPC分类号： G01N33/48728 ,  B01L3/502707 ,  B01L3/502761

摘要： The present invention relates to ionic electrodes, particularly microelectrodes and electrode arrays, and also relates to fabrication methods for such electrodes. In particular, the present invention relates to planar polymer electrodes for making patch clamp measurements of ionic currents through biological membranes, such as the plasma membranes of living cells. The electrodes of the present invention are useful for measuring individual and multisite cell membrane currents and voltages, as well as in high-throughput screening procedures.

公开(公告)号：US06320200B1

公开(公告)日：2001-11-20

申请号：US08595130

申请日：1996-02-01

申请人： Mark A. Reed ,  James M. Tour

发明人： Mark A. Reed ,  James M. Tour

IPC分类号： H01L3524

CPC分类号： H01L51/0058 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/02 ,  G11C13/042 ,  G11C2213/81 ,  H01L27/02 ,  H01L29/7606 ,  H01L29/882 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/957 ,  Y10S977/701 ,  Y10S977/762 ,  Y10S977/849 ,  Y10S977/936 ,  H01L2924/00

摘要： An integrated circuit structure including a plurality of transistors; a plurality of thin-film conductor interconnects, interconnected to form electronic circuits in a predetermined electrical configuration; and a plurality of pairs of contact pads, connected to the thin-film conductor interconnects, each adjacent pair of contact pads including a first pad of a first conductive material and a second pad of a second conductive material, and being electrically connected only by a conductive oligomer of a precisely determined number of units.

摘要翻译： 一种集成电路结构，包括多个晶体管; 多个薄膜导体互连，互连以形成具有预定电气配置的电子电路; 以及连接到薄膜导体互连件的多对接触焊盘，每对相邻的接触焊盘包括第一导电材料的第一焊盘和第二导电材料的第二焊盘，并且仅由 导电低聚物的精确确定数量的单位。

公开(公告)号：US5165065A

公开(公告)日：1992-11-17

申请号：US655244

申请日：1991-02-13

申请人： Mark A. Reed ,  Gary A. Frazier

发明人： Mark A. Reed ,  Gary A. Frazier

IPC分类号： H01L27/14 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  H01L27/14 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/951

摘要： Optically pumped coupled quantum well devices are disclosed. The devices store bits as carrier packets in depressions in the conduction and/or valence band(s) of a single crystal; the band between the depressions is sloped in a common direction which provides unidirectionality. The carrier packets are shifted from depression to depression by optically exciting the carriers and relying on the arrangement of depressions and band slopes; the excitation is conveniently performed by laser illumination. The depressions may be sufficiently small to discretize the energy levels and thereby permit the partitioning of the depressions into groups with each group having depressions of substantially the same energy level structure. The carriers in depressions of one group can then be selectively excited by illumination with a laser or narrow band monochromatic incoherent light source tuned to the energy level structure; this allows multiphase operation of the shifting function.

摘要翻译： 公开了光学泵浦耦合量子阱器件。 器件将位作为载波分组存储在单晶的导通和/或价带中的凹陷中; 凹陷之间的带在相同的方向上倾斜，提供单向性。 通过光学激发载波并依靠凹陷和带状斜率的布置，载波分组从凹陷转移到凹陷; 激发方便地通过激光照射进行。 凹陷可以足够小以离散能量水平，从而允许将凹陷分成几组，每组具有基本上相同的能级结构的凹陷。 然后可以通过用调谐到能级结构的激光或窄带单色非相干光源照明来选择性地激发一组凹陷中的载流子; 这允许移位功能的多相操作。

公开(公告)号：US5059545A

公开(公告)日：1991-10-22

申请号：US559521

申请日：1990-07-24

申请人： William R. Frensley ,  Mark A. Reed

发明人： William R. Frensley ,  Mark A. Reed

IPC分类号： H01L29/76

CPC分类号： B82Y10/00 ,  H01L29/7606

摘要： A tunneling device (50) with the emitter (62) to collector (58) current transported by resonant tunneling through a quantum well (52) and controlled by carriers injected into the well (52) from a base (60) is disclosed. The injected carriers occupy a first energy level in the well (52) and the resonant tunneling is thorough a second energy level in the well (52) thereby separating the controlled carriers from the controlling carriers. AnotherThree-terminal tunneling devices using three different bandgap semiconductor materials to segregate controlling carriers from controlled carriers are disclosed. Preferred embodiments include narrow bandgap quantum wells and medium bandgap emitters so that narrow bandgap bases may inject and withdraw controlling electrons to the well by tunneling with the controlled electron current tunneling through a higher energy level in the well or so that medium bandgap bases may control holes in the well with only a small forward bias on the emitter-base junction and thereby control electrons tunneling through the well from emitter to collector.

摘要翻译： 公开了一种隧道装置（50），其具有通过谐振隧道穿过量子阱（52）并由基底（60）注入到阱（52）中的载流子控制的发射器（62）至集电极（58）的电流。 注入的载流子在阱（52）中占据第一能级，并且谐振隧穿在阱（52）中是彻底的第二能级，从而将受控载流子与控制载流子分开。 公开了使用三种不同带隙半导体材料将控制载波与受控载波分离的三端隧道装置。 优选的实施例包括窄带隙量子阱和中等带隙发射器，使得窄带隙基极可以通过隧穿隧穿而将控制电子注入和撤出，该受控电子束隧道穿过井中更高的能级，或者使得介质带隙基底可以控制孔 在阱中在发射极 - 基极结上仅具有小的正向偏压，从而控制电子穿过阱从发射极到集电极的隧穿。

公开(公告)号：US4959696A

公开(公告)日：1990-09-25

申请号：US263085

申请日：1988-10-26

申请人： William R. Frensley ,  Mark A. Reed

发明人： William R. Frensley ,  Mark A. Reed

IPC分类号： H01L29/76

CPC分类号： B82Y10/00 ,  H01L29/7606

摘要： A tunneling device (50) with the emitter (62) to collector (58) current transported by resonant tunneling through a quantum well (52) and controlled by carriers injected into the well (52) from a base (60) is disclosed. The injected carriers occupy a first energy level in the well (52) and the resonant tunneling is thorough a second energy level in the well (52) thereby separating the controlled carriers from the controlling carriers. Three-terminal tunneling devices using three different bandgap semiconductor materials to segregate controlling carriers from controlled carriers are disclosed. Preferred embodiments include narrow bandgap quantum wells and medium bandgap emitters so that narrow bandgap bases may inject and withdraw controlling electrons to the well by tunneling with the controlled electron current tunneling through a higher energy level in the well or so that medium bandgap bases may control holes in the well with only a small forward bias on the emitter-base junction and thereby control electrons tunneling through the well from emitter to collector.

摘要翻译： 公开了一种隧道装置（50），其具有通过谐振隧道穿过量子阱（52）并由基底（60）注入到阱（52）中的载流子控制的发射器（62）到集电极（58）的电流。 注入的载流子在阱（52）中占据第一能级，并且谐振隧穿在阱（52）中是彻底的第二能级，从而将受控载流子与控制载流子分开。 公开了使用三种不同带隙半导体材料将控制载波与受控载波分离的三端隧道装置。 优选的实施例包括窄带隙量子阱和中等带隙发射器，使得窄带隙基极可以通过隧穿隧穿而将控制电子注入和撤出，该受控电子束隧道穿过井中更高的能级，或者使得介质带隙基底可以控制孔 在阱中在发射极 - 基极结上仅具有小的正向偏压，从而控制电子穿过阱从发射极到集电极的隧穿。

公开(公告)号：US4912531A

公开(公告)日：1990-03-27

申请号：US626551

申请日：1984-06-29

申请人： Mark A. Reed ,  Robert T. Bate

发明人： Mark A. Reed ,  Robert T. Bate

IPC分类号： H01L29/80 ,  H01L21/335 ,  H01L27/10 ,  H01L29/06 ,  H01L29/15 ,  H01L29/32 ,  H01L29/68 ,  H01L29/76

CPC分类号： B82Y10/00 ,  H01L29/151 ,  H01L29/158 ,  H01L29/32 ,  H01L29/66469 ,  H01L29/7606

摘要： A three-terminal quantum well device, which functions somewhat analogously to an MOS transistor. That is, the three terminals of the device can generally be considered as source, gate, and drain. An output contact is connected by tunneling to a number of parallel chains of quantum wells, each well being small enough that the energy levels in the well are quantized discretely. In each of these chains of wells, the second well is coupled to a common second conductor, and the first well is electronically coupled to a common first conductor.

摘要翻译： 三端子量子阱器件，其功能有点类似于MOS晶体管。 也就是说，器件的三个端子通常可以被认为是源极，栅极和漏极。 输出触点通过隧道连接到多个量子阱的平行链，每个阱都足够小，使得阱中的能级离散地被量化。 在这些油井链中的每一个中，第二井被连接到共同的第二导体，并且第一井电连接到共同的第一导体。

公开(公告)号：US4878104A

公开(公告)日：1989-10-31

申请号：US725030

申请日：1985-04-19

申请人： Mark A. Reed ,  Gary A. Frazier

发明人： Mark A. Reed ,  Gary A. Frazier

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/14 ,  H01L29/76 ,  H01L29/772 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  H01L27/14 ,  H01L31/035236 ,  Y10S977/759

摘要： Optically pumped coupled quantum well devices are disclosed. The devices store bits as carrier packets in depressions in the conduction and/or valence band(s) of a single crystal; the band between the depressions is sloped in a common direction which provides unidirectionality. The carrier packets are shifted from depression to depression by optically exciting the carriers and relying on the arrangement of depressions and band slopes; the excitation is conveniently performed by laser illumination. The depressions may be sufficiently small to discretize the energy levels and thereby permit the partitioning of the depressions into groups with each group having depressions of substantially the same energy level structure. The carriers in depressions of one group can then be selectively excited by illumination with a laser or narrow band monochromatic incoherent light source tuned to the energy level structure; this allows multiphase operation of the shifting function.

摘要翻译： 公开了光学泵浦耦合量子阱器件。 器件将位作为载波分组存储在单晶的导通和/或价带中的凹陷中; 凹陷之间的带在相同的方向上倾斜，提供单向性。 通过光学激发载波并依靠凹陷和带状斜率的布置，载波分组从凹陷转移到凹陷; 激发方便地通过激光照射进行。 凹陷可以足够小以离散能量水平，从而允许将凹陷分成几组，每组具有基本上相同的能级结构的凹陷。 然后可以通过用调谐到能级结构的激光或窄带单色非相干光源的照明来选择性地激发一组凹陷中的载流子; 这允许移动功能的多相操作。

公开(公告)号：US4799091A

公开(公告)日：1989-01-17

申请号：US848674

申请日：1986-04-04

申请人： Mark A. Reed

发明人： Mark A. Reed

IPC分类号： H01L27/06 ,  H01L29/32 ,  H01L29/76 ,  H01L29/225 ,  H01L29/88

CPC分类号： H01L29/7606 ,  H01L27/0605 ,  H01L29/32

摘要： Quantum-coupled devices, wherein at least two closely adjacent potential wells, (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias between the wells is adjusted to align energy levels of the two wells, tunneling will occur very rapidly, whereas when energy levels are not aligned, tunneling will be greatly reduced. To provide output coupling from these quantum-well devices to macroscopic currents, the output from the quantum-well devices is injected into localized states close to an extremely small metal line (e.g. 200 Angstroms square in section). These trapped charged perturb the resistance of a metal line significantly, so that a conventional sense amplifier can be used for differential sensing between two such narrow metal lines, to provide macroscopic outputs.

摘要翻译： 其中至少两个紧密相邻的势阱（例如AlGaAs晶格中的GaAs的岛）被制成足够小的量子耦合器件，使得阱内的载流子能级离散量化。 这意味着当孔之间的偏置被调整以对准两个井的能量水平时，隧穿将非常快速地发生，而当能级不对齐时，隧道效应将大大降低。 为了提供从这些量子阱器件到宏观电流的输出耦合，来自量子阱器件的输出被注入接近非常小的金属线（例如截面为200埃的正方形）的局部状态。 这些被捕获的电荷显着扰乱了金属线的电阻，使得常规的读出放大器可以用于两个这样的窄金属线之间的差分感测，以提供宏观的输出。