Abstract:
A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad section. A primary insulating film on the substrate continuously covers the mesa section and the bonding pad section. After a mask has been formed on a portion of the primary insulating film opposite the bonding pad section, the remaining portion of the primary insulating film is etched, followed by removal of the mask. After the removal of the mask, a second insulating film is formed continuously covering the primary insulating film opposite the bonding pad section and the mesa section so that a relatively thick insulating layer is present only opposite the bonding pad section.
Abstract:
There is disclosed a dielectric filter comprising: a plurality of resonant lines disposed in a dielectric block, in a dielectric substrate, or on a dielectric substrate; wherein the open ends of at least one adjacent pair of the resonant lines are oriented in the same direction to be combline-coupled, a first trap resonator resonant line and a signal inputting/outputting excitation line are each interdigitally coupled to one of the plurality of resonant lines, and a second trap-resonator resonant line is interdigitally coupled to the excitation line.
Abstract:
A dielectric resonant component includes at least one dielectric multistage resonator including one dielectric block, a plurality of inner conductor formation holes formed in the one dielectric block, an inner conductor formed on an inner surface of each of the inner conductor formation holes, and an outer conductor covering a substantially entire outer surface of the one dielectric block, the dielectric multistage resonator constituting a plurality of dielectric resonators in the one dielectric block; and a mount substrate fixedly mounted on the dielectric multistage resonator, for transmitting a signal transmission between each of the dielectric resonators of the dielectric multistage resonator and an external circuit board, when the dielectric resonant component is mounted on the external circuit board. The dielectric multistage resonator further includes a pair of input/output electrodes, and the mount substrate includes a unit for connecting the input/output electrodes of the dielectric multistage resonator to a pair of input/output electrodes formed on the circuit board.
Abstract:
A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.
Abstract:
A band-elimination filter (BEF) that includes a coaxial dielectric resonator block, a substrate, and first, second, and third inductance elements. The coaxial dielectric resonator block includes inner conductors and an outer conductor, and forms coaxial dielectric resonators. The first inductance element is between a signal transmission path connected to one of the coaxial dielectric resonators via a series resonant capacitor and a signal transmission path connected to the other one of the coaxial dielectric resonators via a series resonant capacitor. The second inductance element is between one end of the first inductance element and the ground, and the third inductance elements is between the other end of the first inductance element and the ground.
Abstract:
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.
Abstract:
A waveguide semiconductor optical device has a pin junction on a semi-insulating substrate. The pin junction consists of an n-type cladding layer, an i-type absorption layer, and a p-type cladding layer. The waveguide semiconductor optical device includes a dopant impurity concentration not higher than 1016 cm-3 in the i-type absorption layer.
Abstract translation:波导半导体光学器件在半绝缘衬底上具有pin结。 pin结由n型包覆层,i型吸收层和p型覆层组成。 该波导半导体光学器件包括在i型吸收层中不高于10 16 cm -3的掺杂剂杂质浓度。
Abstract:
A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.
Abstract:
A light modulator includes a semiconductor substrate having a main surface, a rear surface, and a grounding conductor on the rear surface. A wave guide section having a width is located on the semiconductor substrate. A bonding pad section on the semiconductor substrate is located adjacent to the wave guide section and an insulating layer covers the main surface of the semiconductor substrate. A portion of the insulating layer immediately opposite the bonding pad section includes a multiple layer structure of insulating films. An electrode opposite the bonding pad section is electrically connected to the wave guide section.
Abstract:
A dielectric filter comprising: a dielectric block including a first elongated sub-block and a second elongated sub-block each having a corresponding pair of longitudinally opposing end faces, and an outer surface, said sub-blocks being disposed adjacent one another; a first longitudinally extending through-hole disposed between the first pair of longitudinally opposing end faces of said first sub-block, the first through-hole having two outer ends and an inner surface; a first inner conductor formed on the inner surface of said first through-hole, said first inner conductor having outer ends; an outer conductor formed on the outer surface of said dielectric block but not electrically coupled to the outer ends of the first inner conductor such that the outer ends of the first inner conductor are open-circuited; a first connection conductor through which a predetermined part of the first inner conductor between its outer ends is connected to said outer conductor; a second longitudinally extending through-hole disposed between the second pair of longitudinally opposing end faces of said second sub-block, the second through-hole having two outer ends and an inner surface; a second inner conductor formed on the inner surface of said second through-hole, said second inner conductor being electrically connected to said outer conductor at its outer ends such that they are short-circuited, said inner conductor having a pair of open-circuited inner ends disposed at a predetermined location between its two outer ends, wherein said first and second sub-blocks of said dielectric block are longitudinally shifted relative to one another.