公开(公告)号：US5796118A

公开(公告)日：1998-08-18

申请号：US777350

申请日：1996-12-27

申请人： Takenori Morikawa ,  Tsutomu Tashiro

发明人： Takenori Morikawa ,  Tsutomu Tashiro

IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01L31/035254

摘要： A photodetection semiconductor device is constructed in such a manner that a photodiode light absorbing layer includes an Si/SiGe super-lattice layer (6), which forms a layer in parallel with the surface of a silicon substrate (1), and upper and lower P type low Ge concentration SiGe epitaxial layers (5) and (7), which sandwich the Si/SiGe super-lattice layer between them and contain Ge lower than a Ge content in the Si/SiGe super-lattice layer, a highly dense P+ type Si contact layer (8) is directly formed on the upper SiGe epitaxial layer (7) and a highly dense N+ type epitaxial layer (2) is formed immediately below the lower SiGe epitaxial layer (5). Preferably, Ge concentration in each of the upper and lower SiGe epitaxial layers (5) and (7) is set to be at least 1% or higher.

摘要翻译： 光探测半导体器件以这样的方式被构造：光电二极管光吸收层包括Si / SiGe超晶格层（6），其形成与硅衬底（1）的表面平行的层，以及上和下 P型低Ge浓度SiGe外延层（5）和（7），它们夹在其间的Si / SiGe超晶格层并含有低于Si / SiGe超晶格层中Ge含量的Ge，高密度P + 在上部SiGe外延层（7）上直接形成Si型接触层（8），在下部SiGe外延层（5）的正下方形成高密度的N +型外延层（2）。 优选地，上，下SiGe外延层（5）和（7）中的每一个中的Ge浓度设定为至少1％以上。

公开(公告)号：US5323032A

公开(公告)日：1994-06-21

申请号：US941723

申请日：1992-09-08

申请人： Fumihiko Sato ,  Tsutomu Tashiro

发明人： Fumihiko Sato ,  Tsutomu Tashiro

IPC分类号： H01L29/165 ,  H01L21/331 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A Si-SiGe-Si heterojunction bipolar transistor which has a very thin epitaxial base layer. The device possesses an optimum doping profile across a base layer. The emitter region is higher doping concentration of n.sup.+ -type. The base layer of p-type comprises both a monocrystalline SiGe layer having a lightly doped region on a collector side and a heavily doped region, and a lightly doped monocrystalline Si layer on an emitter side. An emitter side Si-SiGe heterojunction exists in the base layer and a collector side Si-SiGe heterojunction exists in the collector region. Those provides a slope negative gradient of a potential profile from the emitter to collector without a potential barrier for carriers, or electrons or holes. The very thin base layer is connected to an aluminium contact through an external base layer and a base contact layer thereby permitting the very thin base layer to be free from a damage by contacting with a metal such as aluminium. In replacement of this, the base layer may be formed thereunder with a base contact layer to cover the damage of the base layer.

摘要翻译： 具有非常薄的外延基底层的Si-SiGe-Si异质结双极晶体管。 该器件具有穿过基极层的最佳掺杂分布。 发射极区n +型掺杂浓度较高。 p型的基底层包括在集电极侧具有轻掺杂区域和重掺杂区域的单晶SiGe层和发射极侧上的轻掺杂单晶Si层。 在基极层中存在发射极侧Si-SiGe异质结，在集电极区域存在集电极侧Si-SiGe异质结。 那些提供从发射极到集电极的电位分布的斜率负梯度，而对于载流子或电子或空穴没有势垒。 非常薄的基底层通过外部基底层和基底接触层连接到铝接触，从而允许非常薄的基底层与例如铝的金属接触而损坏。 作为替代，可以在基底层上形成基底层以覆盖基底层的损伤。

公开(公告)号：US4644480A

公开(公告)日：1987-02-17

申请号：US672210

申请日：1984-11-16

申请人： Koichi Haruna ,  Kazuo Nakao ,  Tamotsu Nishiyama ,  Tsutomu Tashiro ,  Kuniaki Matsumoto ,  Nobuyuki Saida

发明人： Koichi Haruna ,  Kazuo Nakao ,  Tamotsu Nishiyama ,  Tsutomu Tashiro ,  Kuniaki Matsumoto ,  Nobuyuki Saida

IPC分类号： G05B19/418 ,  G06F19/00 ,  G06Q50/00 ,  G06Q50/04 ,  G07C3/14 ,  G06F15/46

CPC分类号： G06Q10/06 ,  G05B19/41875 ,  G07C3/14 ,  Y02P90/14 ,  Y02P90/22

摘要： A reliability analyzing system for manufacturing processes is disclosed, which comprises a computer system provided with a data memory device, a central processing device and input/output devices, terminals which input/output information into/from said computer system, and output devices for manufacturing sites; whereby said data memory device stores required specifications for each product, works for manufacturing and controlling processes, information relating to items, such as required specifications, works, control items, etc. and information mutually relating different items, and on the basis of the stored information, reliability analysis for each process is effected for all the processes and reliability analysis for each required specification is performed for all the required specifications.

摘要翻译： 公开了一种用于制造过程的可靠性分析系统，其包括具有数据存储装置，中央处理装置和输入/输出装置的计算机系统，输入/输出信息到所述计算机系统中的终端和用于制造的输出装置 网站 由此所述数据存储装置存储每个产品所需的规格，制造和控制过程的工作，与所要求的规格，作品，控制项目等项目有关的信息以及相互不相关的物品的信息，以及存储的 对所有过程进行每个过程的信息，可靠性分析，并针对所有要求的规格执行每个所需规格的可靠性分析。

公开(公告)号：US20070263019A1

公开(公告)日：2007-11-15

申请号：US11744944

申请日：2007-05-07

申请人： Naohiro Furukawa ,  Hisashi Ikeda ,  Kosuke Konishi ,  Tsutomu Tashiro ,  Shoichi Nakagami

发明人： Naohiro Furukawa ,  Hisashi Ikeda ,  Kosuke Konishi ,  Tsutomu Tashiro ,  Shoichi Nakagami

IPC分类号： B41J29/38

CPC分类号： B41J3/44 ,  B41J3/4076

摘要： The invention has an object to guarantee, when rewritable paper is used, authenticity of information shown on the rewritable paper. Provided is an information management method for managing information concerning a medium executed in an information management system including: the medium capable of representing on a surface thereof object information that is contents concerning an object; a management apparatus for managing a history of operation on the medium; and a printing apparatus for representing the object information on the medium and erasing the represented object information from the medium, the information management method comprising: holding, by the management apparatus, a correspondence among an identifier of the medium, the object information represented on the medium, and a valid period of the object; and recording, by the management apparatus, a start of the valid period of the object when the printing apparatus represents the object information on the medium.

摘要翻译： 本发明的目的是在可重写纸被使用时保证在可重写纸上显示的信息的真实性。 提供一种信息管理方法，用于管理关于在信息管理系统中执行的媒体的信息，包括：能够在表面上表示作为对象的内容的对象信息的媒体; 用于管理介质上的操作历史的管理装置; 以及打印装置，用于在介质上表示对象信息并从介质中擦除所表示的对象信息，所述信息管理方法包括：由所述管理装置保持所​​述介质的标识符之间的对应关系， 媒介和对象的有效期; 以及当所述打印装置表示所述介质上的对象信息时，由所述管理装置记录所述对象的有效期的开始。

公开(公告)号：US20070230750A1

公开(公告)日：2007-10-04

申请号：US11672682

申请日：2007-02-08

申请人： Hisashi Ikeda ,  Naohiro Furukawa ,  Kosuke Konishi ,  Tsutomu Tashiro ,  Shoichi Nakagami

发明人： Hisashi Ikeda ,  Naohiro Furukawa ,  Kosuke Konishi ,  Tsutomu Tashiro ,  Shoichi Nakagami

IPC分类号： G06K15/00

CPC分类号： G06F17/242 ,  G06F17/30011 ,  G06F17/30725

摘要： Provided is an information management method for use in an information management system that includes a coordinate pointing device for identifying a paper medium, and a contents server for managing a digital document, and holds an attribute of the digital document and an attribute of a paper document obtained by printing the digital document on the paper medium, the information management method comprising: judging whether a paper document identified by the coordinate pointing device is a master of a document by referring to an attribute of the paper document; and permitting, when it is judged that the identified paper document is the master of the document, to update information annotated to the identified paper document in a digital document corresponding to the paper document to which the information has been annotated

摘要翻译： 提供了一种信息管理方法，该信息管理系统包括用于识别纸介质的坐标指示装置和用于管理数字文档的内容服务器，并保存数字文档的属性和纸质文档的属性 通过在纸介质上打印数字文档获得的信息管理方法包括：通过参考纸张文档的属性来判断由坐标指示装置识别的纸质文档是否是文档的主文件; 并且当判定所识别的纸质文档是文档的主文时，允许在与已经注释了该信息的纸张文档相对应的数字文档中更新注释到所识别的纸张文档的信息

公开(公告)号：US07262486B2

公开(公告)日：2007-08-28

申请号：US11154514

申请日：2005-06-17

申请人： Masaya Kawano ,  Tsutomu Tashiro ,  Yoichiro Kurita

发明人： Masaya Kawano ,  Tsutomu Tashiro ,  Yoichiro Kurita

IPC分类号： H01L21/40

CPC分类号： H01L21/76286 ,  H01L21/84

摘要： The SOI substrate 1 has a supporting substrate 10, an insulating layer 20 formed on the supporting substrate 10 and a silicon layer 30 formed on the insulating layer 20. A through electrode 40 is provided in a device formation region A1 of the SOI substrate 1. The through electrode 40 reaches the insulating layer 20 from the silicon layer 30. Specifically, the through electrode 40 extends to an inner part of the insulating layer 20 originating from a surface of the silicon layer 30 while penetrating the silicon layer 30. Here, an end face 40a of the through electrode 40 at the insulating layer 20 side stops inside the insulating layer 20.

摘要翻译： SOI衬底1具有支撑衬底10，形成在支撑衬底10上的绝缘层20和形成在绝缘层20上的硅层30。 在SOI衬底1的器件形成区域A 1中设置有贯通电极40。 通孔40从硅层30到达绝缘层20。 具体地，贯穿电极40延伸到绝缘层20的内部，源于硅层30的表面，同时穿透硅层30。 这里，绝缘层20侧的贯通电极40的端面40a停止在绝缘层20的内部。

公开(公告)号：US07169083B2

公开(公告)日：2007-01-30

申请号：US10869033

申请日：2004-06-17

申请人： Mamoru Sawada ,  Toshiki Matsumoto ,  Tsutomu Tashiro ,  Mamoru Mabuchi ,  Takehito Fujii ,  Motoaki Kataoka

发明人： Mamoru Sawada ,  Toshiki Matsumoto ,  Tsutomu Tashiro ,  Mamoru Mabuchi ,  Takehito Fujii ,  Motoaki Kataoka

IPC分类号： B60W10/06

CPC分类号： B60K28/165 ,  B60K28/16 ,  B60T8/1755 ,  B60T8/1766 ,  B60W10/06 ,  B60W10/10 ,  B60W10/184 ,  B60W2520/263 ,  B60W2520/28 ,  Y10T477/81

摘要： In a driving condition control system, a sensing unit senses a first physical quantity indicative of a rotation of the first rotatable axle assembly and a second physical quantity indicative of a rotation of the second rotatable axle assembly. A determining unit compares the first and second physical quantities of the rotations of the first and second rotational axle assemblies and determines whether a driving condition of the vehicle is unstable according to the compared result. As a result, the unstable condition of the vehicle can be rapidly detected without detecting a yaw moment of the vehicle.

摘要翻译： 在驾驶状态控制系统中，感测单元感测指示第一可旋转轴组件的旋转的第一物理量和指示第二可旋转轴组件的旋转的第二物理量。 确定单元比较第一和第二旋转轴组件的旋转的第一和第二物理量，并根据比较结果确定车辆的驾驶状况是否不稳定。 结果，可以在不检测车辆的横摆力矩的情况下快速地检测车辆的不稳定状态。

公开(公告)号：US06810314B2

公开(公告)日：2004-10-26

申请号：US10155009

申请日：2002-05-28

申请人： Tsutomu Tashiro ,  Noboru Miyamoto ,  Takehito Fujii

发明人： Tsutomu Tashiro ,  Noboru Miyamoto ,  Takehito Fujii

IPC分类号： G06F700

CPC分类号： B60W10/06 ,  B60G17/0195 ,  B60G2800/85 ,  B60T8/321 ,  B60T8/885 ,  B60T2270/408 ,  B60W10/101 ,  B60W10/18 ,  B60W30/1819 ,  B60W50/00 ,  B60W50/029 ,  B60W2050/0005 ,  B60W2050/021 ,  F02D41/22 ,  F02D41/26 ,  F16H61/12 ,  F16H61/14 ,  F16H2061/1208 ,  F16H2061/1232 ,  F16H2061/1272 ,  F16H2061/1276

摘要： An integrated control system for a vehicle comprises a plurality of system device control units for controlling system devices in a vehicle, and a manager control unit for providing the system device control units with commands serving as operation directives of the system devices. A particular one of the system device control units has a hierarchical layer. If the predetermined operation should be carried out, the particular system device control unit issues a command to the particular system device as an independent operation directive for driving the particular system device to carry out the predetermined operation independently of an operation directive issued by the manager control unit.

摘要翻译： 一种用于车辆的集成控制系统包括用于控制车辆中的系统设备的多个系统设备控制单元和用于向系统设备控制单元提供用作系统设备的操作指令的命令的管理器控制单元。 系统设备控制单元中的特定一个具有分级层。 如果要执行预定操作，则特定系统设备控制单元向特定系统设备发出命令作为用于驱动特定系统设备独立于由管理器控制发出的操作指令执行预定操作的独立操作指令 单元。

公开(公告)号：US06466851B2

公开(公告)日：2002-10-15

申请号：US09876042

申请日：2001-06-08

申请人： Yoshifumi Kato ,  Tsutomu Tashiro ,  Noboru Miyamoto ,  Takehito Fujii

发明人： Yoshifumi Kato ,  Tsutomu Tashiro ,  Noboru Miyamoto ,  Takehito Fujii

IPC分类号： G06F700

CPC分类号： B60W30/18 ,  B60K28/16 ,  B60K31/0008 ,  B60W10/101 ,  B60W2050/0045 ,  B60W2710/0677 ,  B60W2710/105 ,  F16H61/14 ,  F16H61/66 ,  Y02T10/56 ,  Y02T10/84 ,  Y10T477/60 ,  Y10T477/6407

摘要： In a vehicle control system of this invention, a CVT ECU does not executes the calculations such as a gear ratio, etc., but simply controls the gear ratio of a CVT on the basis of the target gear ratio and a CVT input torque transmitted from a manager ECU by way of a communication line. Accordingly, when mounting a CVT unit constructed with the CVT and the CVT ECU in a vehicle, the vehicle control does not need to tune the CVT ECU one by one, even though the types and engines of vehicles are varied. Therefore, it is possible to configure the CVT unit independently of the types of vehicles, which achieves standardization or generalization of the CVT unit in terms of both the hardware and the software.

摘要翻译： 在本发明的车辆控制系统中，CVT ECU不执行齿轮比等的计算，而是根据目标齿轮比和CVT输入扭矩传递的简单控制CVT的传动比 通过通信线路的经理ECU。 因此，当将由CVT和CVT ECU构成的CVT单元安装在车辆中时，车辆控制不需要逐一调谐CVT ECU，即使车辆的类型和发动机是变化的。 因此，可以根据硬件和软件来实现CVT单元的独立于车辆的类型，从而实现CVT单元的标准化或一般化。

公开(公告)号：US6080600A

公开(公告)日：2000-06-27

申请号：US20253

申请日：1998-02-06

申请人： Mitsuhiro Sugiyama ,  Tsutomu Tashiro

发明人： Mitsuhiro Sugiyama ,  Tsutomu Tashiro

IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/547

摘要： It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. Then, an epitaxial layer of the second conductivity type is grown in the trench, where a PN-junction is constructed between the bottom surface of the epitaxial layer and the semiconductor substrate. An impurity diffusion layer of the second conductivity type with higher impurity concentration than that of an internal portion of the epitaxial semiconductor layer is formed over the side surface of the epitaxial layer of the second conductivity type. In the aforementioned structure, when a reverse bias voltage is applied to the PN-junction, a depletion layer does not extend to a neighborhood of the insulating layer, and a leakage current, which flows via surface states near the insulating layer.

摘要翻译： 本发明的目的是抑制半导体光电二极管的漏电流。 在第一导电类型的半导体衬底的表面上形成有覆盖有绝缘层的侧壁的沟槽。 然后，在沟槽中生长第二导电类型的外延层，其中在外延层的底表面和半导体衬底之间构造PN结。 在第二导电类型的外延层的侧表面上形成杂质浓度高于外延半导体层的内部部分的第二导电类型的杂质扩散层。 在上述结构中，当向PN结施加反向偏置电压时，耗尽层不会延伸到绝缘层的附近以及在绝缘层附近经由表面状态流动的漏电流。