公开(公告)号：US20160300711A1

公开(公告)日：2016-10-13

申请号：US15093218

申请日：2016-04-07

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack ,  Mark H. Somervell

IPC: H01L21/027 ,  H01L21/033

CPC classification number: H01L21/0273 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method for treating a microelectronic substrate to form a chemical template includes patterning the substrate to form a trench structure with a plurality of trenches of a defined trench width and depositing a photoactive material on the substrate to overfill the trench structure to form a fill portion in the plurality of trenches and an overfill portion above the trench structure. The method further includes exposing the photoactive material to electromagnetic radiation comprising a wavelength that is at least four times greater than the defined trench width such that the overfill portion is modified by the exposure while the electromagnetic radiation fails to penetrate into the plurality of trenches leaving the fill portion unmodified and removing the modified overfill portion of the photoactive material to form a planarized filled trench structure for use as a chemical template for selective reactive ion etching, selective deposition, or directed self-assembly.

Abstract translation: 用于处理微电子衬底以形成化学模板的方法包括图案化衬底以形成具有限定的沟槽宽度的多个沟槽的沟槽结构，并且在衬底上沉积光活性材料以过度填充沟槽结构以形成填充部分 多个沟槽和沟槽结构之上的溢出部分。 该方法还包括将光活性材料暴露于电磁辐射，该电磁辐射包括比限定的沟槽宽度大至少四倍的波长，使得当电磁辐射不能穿透到多个沟槽中时，覆盖部分被曝光改变， 填充部分未改性并且去除光活性材料的改进的过度填充部分以形成用作选择性反应离子蚀刻，选择性沉积或定向自组装的化学模板的平坦化填充沟槽结构。

公开(公告)号：US20160268132A1

公开(公告)日：2016-09-15

申请号：US15161762

申请日：2016-05-23

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack ,  Mark H. Somervell

IPC: H01L21/033

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) surrounds the exposed topography. Further to the method, the template is filled with a block copolymer (BCP) to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

公开(公告)号：US09418860B2

公开(公告)日：2016-08-16

申请号：US14518699

申请日：2014-10-20

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Makoto Muramatsu ,  Benjamen M. Rathsack ,  Tadatoshi Tomita ,  Hisashi Genjima ,  Hidetami Yaegashi ,  Kenichi Oyama

IPC: H01L21/302 ,  H01L21/308 ,  G03F7/42 ,  H01L21/027 ,  G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3213

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 衬底具有形成在顶部的构成现有形貌的特征，并且围绕暴露的形貌形成用于定向自组装（DSA）的模板。 除了该方法之外，曝光的模板表面经化学处理。 在一个实施方案中，用含氢还原化学处理表面以将表面改变为较少氧化的状态。 在另一个实施方案中，表面涂覆有嵌段共聚物（BCP）的第一相，使表面比涂覆前比第一相更有吸引力。 然后用BCP填充模板以覆盖暴露的形貌，然后在模板内对BCP进行退火以驱动与地形对准的自组装。 开发退火的BCP暴露了立即覆盖地形的DSA模式。

公开(公告)号：US20160013052A1

公开(公告)日：2016-01-14

申请号：US14858568

申请日：2015-09-18

Applicant: Tokyo Electron Limited

Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/02 ,  H01L21/66 ,  H01L21/268

CPC classification number: H01L21/02345 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/268 ,  H01L21/28123 ,  H01L22/12 ,  H01L22/20

Abstract: A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate, annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed, and annealing the layer of the block copolymer a second time to refine or modify the microphase segregation, where one of the annealing steps uses an absorption based heating method.

Abstract translation: 提供一种图案化层叠基板的方法，其包括在基板上形成嵌段共聚物层，使嵌段共聚物层退火以影响形成自组装畴的微相分离，并使嵌段共聚物层退火 第二次细化或改变微相分离，其中一个退火步骤使用基于吸收的加热方法。

公开(公告)号：US09209014B2

公开(公告)日：2015-12-08

申请号：US14202689

申请日：2014-03-10

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  G03F7/40 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L21/02269 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0337

Abstract: A method of forming a patterned substrate includes casting a layer of a block copolymer having an intrinsic glass transition temperature Tg, on a substrate to form a layered substrate. The method also includes heating the layered substrate at an annealing temperature, which is greater than about 50° C. above the intrinsic glass transition temperature Tg of the block copolymer, in a first atmosphere. The method further includes thermally quenching the layered substrate to a quenching temperature lower than the intrinsic glass transition temperature Tg, at a rate of greater than about 50° C./minute in a second atmosphere. The method further includes controlling an oxygen content in the first and second atmospheres to a level equal to or less than about 50 ppm to maintain the annealing and quenching temperatures below a thermal degradation temperature Td of the block copolymer.

Abstract translation: 形成图案化衬底的方法包括在衬底上浇铸具有本征玻璃化转变温度Tg的嵌段共聚物层以形成层状衬底。 该方法还包括在第一气氛中以高于嵌段共聚物的本征玻璃化转变温度Tg高于约50℃的退火温度加热层状基材。 该方法还包括在第二气氛中以大于约50℃/分钟的速率将层状衬底热淬火至低于本征玻璃化转变温度Tg的淬火温度。 该方法还包括将第一和第二气氛中的氧含量控制在等于或小于约50ppm的水平以保持退火和淬火温度低于嵌段共聚物的热降解温度Td。

公开(公告)号：US09147574B2

公开(公告)日：2015-09-29

申请号：US14208130

申请日：2014-03-13

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/02 ,  H01L21/027 ,  C23C16/455 ,  G03F7/00 ,  G03F7/40 ,  H01J37/317 ,  C23C14/22 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/221 ,  C23C16/45525 ,  G03F7/0002 ,  G03F7/40 ,  G03F7/405 ,  H01J37/317 ,  H01L21/0272

Abstract: A method is provided for patterning a layered substrate that includes loading a substrate into a coater-developer processing system; coating the substrate with a photoresist material layer; patterning the photoresist material layer to form a photoresist pattern; transferring the substrate to a deposition processing system; and depositing a neutral layer over the photoresist pattern and exposed portions of the substrate. The neutral layer can deposited using a gas cluster ion beam (GCIB) process, or an atomic layer deposition (ALD) process, which has minimal topography. The method may further include lifting off a portion of the neutral layer deposited over the photoresist pattern to expose a neutral layer template for subsequent directed self-assembly (DSA) patterning; depositing a DSA material layer over the neutral layer template; baking the DSA material layer to form a DSA pattern; and developing the DSA material layer to expose the final DSA pattern for subsequent feature etching.

Abstract translation: 提供了一种用于图案化层状基板的方法，其包括将基板装载到涂布机显影剂处理系统中; 用光致抗蚀剂材料层涂覆基材; 图案化光致抗蚀剂材料层以形成光致抗蚀剂图案; 将衬底转移到沉积处理系统; 以及在光致抗蚀剂图案和衬底的暴露部分上沉积中性层。 使用气体簇离子束（GCIB）工艺或原子层沉积（ALD）工艺沉积中性层，其具有最小的形貌。 该方法可以进一步包括提起沉积在光致抗蚀剂图案上的中性层的一部分以暴露中性层模板以用于随后的定向自组装（DSA）图案化; 在中性层模板上沉积DSA材料层; 烘烤DSA材料层以形成DSA图案; 并开发DSA材料层以暴露最终的DSA图案用于随后的特征蚀刻。

公开(公告)号：US20150111387A1

公开(公告)日：2015-04-23

申请号：US14518699

申请日：2014-10-20

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Makoto Muramatsu ,  Benjamen M. Rathsack ,  Tadatoshi Tomita ,  Hisashi Genjima ,  Hidetami Yaegashi ,  Kenichi Oyama

IPC: H01L21/308 ,  H01L21/027

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 衬底具有形成在顶部的构成现有形貌的特征，并且围绕暴露的形貌形成用于定向自组装（DSA）的模板。 除了该方法之外，曝光的模板表面经化学处理。 在一个实施方案中，用含氢还原化学处理表面以将表面改变为较少氧化的状态。 在另一个实施方案中，表面涂覆有嵌段共聚物（BCP）的第一相，使表面比涂覆前比第一相更有吸引力。 然后用BCP填充模板以覆盖暴露的形貌，然后在模板内对BCP进行退火以驱动与地形对准的自组装。 开发退火的BCP暴露了立即覆盖地形的DSA模式。

公开(公告)号：US20150108087A1

公开(公告)日：2015-04-23

申请号：US14518548

申请日：2014-10-20

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Benjamen M. Rathsack

IPC: G03F7/20 ,  G03F7/30 ,  G03F7/42 ,  G03F7/16

CPC classification number: G03F7/0002 ,  G03F7/091 ,  G03F7/165 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0273 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139

Abstract: A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. An embodiment of the method includes aligning and preparing a first directed self-assembly pattern (DSA) pattern immediately overlying the plurality of lines, and transferring the first DSA pattern to form a first set of cuts in the plurality of lines. The embodiment further includes aligning and preparing a second DSA pattern immediately overlying the plurality of lines having the first set of cuts formed therein, and transferring the second DSA pattern to form a second set of cuts in the plurality of lines. The first and second DSA patterns each comprise a block copolymer having a hexagonal close-packed (HCP) morphology and a characteristic dimension Lo that is between 0.9 and 1.1 times the spacing between individual lines of the plurality of lines.

Abstract translation: 提供了一种在衬底上形成图案形貌的方法。 基板最初设置有形成在顶部的暴露的多条线。 该方法的一个实施例包括对准和准备立即覆盖多个线的第一定向自组装图案（DSA）图案，以及传送第一DSA图案以形成多条线中的第一组切口。 该实施例还包括对准和准备立即覆盖其中形成有第一组切口的多条线的第二DSA图案，以及传送第二DSA图案以形成多条线中的第二组切口。 第一和第二DSA图案各自包含具有六方密堆积（HCP）形态和特征尺寸Lo的多嵌段共聚物，其特征尺寸Lo在多条线之间的各条线之间的间距的0.9至1.1倍之间。

公开(公告)号：US20140273523A1

公开(公告)日：2014-09-18

申请号：US14202689

申请日：2014-03-10

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack

IPC: H01L21/02

CPC classification number: H01L21/02269 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0337

Abstract: A method of forming a patterned substrate includes casting a layer of a block copolymer having an intrinsic glass transition temperature Tg, on a substrate to form a layered substrate. The method also includes heating the layered substrate at an annealing temperature, which is greater than about 50° C. above the intrinsic glass transition temperature Tg of the block copolymer, in a first atmosphere. The method further includes thermally quenching the layered substrate to a quenching temperature lower than the intrinsic glass transition temperature Tg, at a rate of greater than about 50° C./minute in a second atmosphere. The method further includes controlling an oxygen content in the first and second atmospheres to a level equal to or less than about 50 ppm to maintain the annealing and quenching temperatures below a thermal degradation temperature Td of the block copolymer.

Abstract translation: 形成图案化衬底的方法包括在衬底上浇铸具有本征玻璃化转变温度Tg的嵌段共聚物层以形成层状衬底。 该方法还包括在第一气氛中以高于嵌段共聚物的本征玻璃化转变温度Tg高于约50℃的退火温度加热层状基材。 该方法还包括在第二气氛中以大于约50℃/分钟的速率将层状衬底热淬火至低于本征玻璃化转变温度Tg的淬火温度。 该方法还包括将第一和第二气氛中的氧含量控制在等于或小于约50ppm的水平以保持退火和淬火温度低于嵌段共聚物的热降解温度Td。

公开(公告)号：US20130107237A1

公开(公告)日：2013-05-02

申请号：US13722548

申请日：2012-12-20

Applicant: Tokyo Electron Limited

Inventor： Michael A. Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell

IPC: G03F7/26

CPC classification number: G03F7/26 ,  G03F7/2024 ,  G03F7/40 ,  H01L21/67207

Abstract: A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.

Abstract translation: 描述了使用辐射敏感材料构图衬底的方法和系统。 该方法和系统包括在衬底上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案，然后在曝光之后进行曝光后烘烤。 然后对成像的辐射敏感材料层进行正音发展，以去除具有高辐射曝光的区域以形成辐射敏感材料线。 然后去除辐射敏感材料线内的曝光梯度，然后减少辐射敏感材料线。