公开(公告)号：US20090121158A1

公开(公告)日：2009-05-14

申请号：US12354153

申请日：2009-01-15

申请人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

发明人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

IPC分类号： G21G5/00

CPC分类号： H01J37/3056 ,  H01J2237/006 ,  H01J2237/31744 ,  H01J2237/31745

摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

摘要翻译： 试样制造装置包括：样品台，放置试样; 带电粒子束光学系统，用于将带电粒子束照射在样本上; 供给来源的蚀刻剂材料在其分子中含有氟和碳的蚀刻剂材料，其分子中不含氧，在标准状态下为固体或液体; 以及在其中容纳样品台的真空室。 试样制造方法包括以下步骤：通过照射带电粒子束来处理试样的要求区域附近的孔; 通过照射带电粒子束使被请求区域曝光; 在其分子中供给含有氟和碳的蚀刻剂材料在其分子中不含氧，并且在标准状态下为固体或液体，暴露于所要求的区域; 以及将所述带电粒子束照射在被请求区域上。

公开(公告)号：US20080067385A1

公开(公告)日：2008-03-20

申请号：US11980654

申请日：2007-10-31

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G21K5/08 ,  G01N23/225

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US20070252092A1

公开(公告)日：2007-11-01

申请号：US11808783

申请日：2007-06-13

申请人： Muneyuki Fukuda ,  Hiroyasu Shichi

发明人： Muneyuki Fukuda ,  Hiroyasu Shichi

IPC分类号： H01J37/305

CPC分类号： C23C16/047 ,  C23C16/52 ,  H01J37/3023 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/31745

摘要： Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

摘要翻译： 某些薄膜沉积和选择性蚀刻技术可能包括分别与沉积气体和蚀刻气体一起扫描带电粒子束。 在常规方法中，不幸的是，沉积速率或选择比通常根据光学系统设置，扫描间隔，停留时间，循环时间，衬底等​​而降低。因此，提供了一种用于找到光学系统设置，驻留 时间和扫描间距。 发现这些参数是根据沉积速率或蚀刻速率的循环时间依赖性来实现带电粒子束的最佳扫描方法。 该沉积速率或蚀刻速率是预先存储于应进行成膜或选择性蚀刻的期望的照射区域的测量值。 该装置在显示装置上显示其判断结果。

公开(公告)号：US07268356B2

公开(公告)日：2007-09-11

申请号：US10898592

申请日：2004-07-26

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21G5/00

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US07242013B2

公开(公告)日：2007-07-10

申请号：US10873170

申请日：2004-06-23

申请人： Muneyuki Fukuda ,  Hiroyasu Shichi

发明人： Muneyuki Fukuda ,  Hiroyasu Shichi

IPC分类号： H01J37/305

CPC分类号： C23C16/047 ,  C23C16/52 ,  H01J37/3023 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/31745

摘要： Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

公开(公告)号：US07205560B2

公开(公告)日：2007-04-17

申请号：US11127240

申请日：2005-05-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： H01J37/256 ,  G21K7/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US20050006600A1

公开(公告)日：2005-01-13

申请号：US10898592

申请日：2004-07-26

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： B23K15/00 ,  G01N1/28 ,  G01N23/20 ,  G01Q20/02 ,  G01Q30/20 ,  G01Q70/00 ,  A61N5/00 ,  G01K1/08 ,  G21K5/10

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US08735814B2

公开(公告)日：2014-05-27

申请号：US13879051

申请日：2011-10-05

申请人： Yasunari Sohda ,  Takeyoshi Ohashi ,  Tasuku Yano ,  Muneyuki Fukuda ,  Noritsugu Takahashi

发明人： Yasunari Sohda ,  Takeyoshi Ohashi ,  Tasuku Yano ,  Muneyuki Fukuda ,  Noritsugu Takahashi

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/023 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/1534

摘要： The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.

摘要翻译： 电子束装置包括电子源和物镜偏转器。 电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。 电子束装置还包括偏置色差校正元件，该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器， 在电磁偏转器内，使得材料的高度位置与电磁偏转器重叠，并且能够施加偏移电压。 因此，可以提供一种电子束装置，通过该电子束装置可以减轻由偏转引起的几何像差（寄生像差），并且在高分辨率的宽视角上实现偏转。

公开(公告)号：US08704175B2

公开(公告)日：2014-04-22

申请号：US13812451

申请日：2011-08-26

申请人： Yasunari Sohda ,  Muneyuki Fukuda ,  Takeyoshi Ohashi ,  Osamu Komuro ,  Toru Yamanashi

发明人： Yasunari Sohda ,  Hiromasa Yamanashi ,  Muneyuki Fukuda ,  Takeyoshi Ohashi ,  Osamu Komuro

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J37/153 ,  H01J2237/1506 ,  H01J2237/1532 ,  H01J2237/2826

摘要： Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).

摘要翻译： 本发明提供一种扫描电子显微镜，其配备有当由电子束柱产生的散光和从测量样品的周围产生的散光存在时使用的高速和高精度散光测量装置。 该扫描电子显微镜的特征在于以高速和高精度控制像散校正器（201），以通过使用从改变后获得的二维图像的质量获得散光的方法来校正像散 散光校正器（201）的强度，以及根据使用倾斜偏转器（202）使电子束倾斜时发生的电子束的位置偏移的变化来测量像散的方法。

公开(公告)号：US20120286160A1

公开(公告)日：2012-11-15

申请号：US13451596

申请日：2012-04-20

申请人： Takeyoshi OHASHI ,  Yasunari Sohda ,  Makoto Ezumi ,  Muneyuki Fukuda ,  Noritsugu Takahashi

发明人： Takeyoshi OHASHI ,  Yasunari Sohda ,  Makoto Ezumi ,  Muneyuki Fukuda ,  Noritsugu Takahashi

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J37/265 ,  H01J2237/1532 ,  H01J2237/1536 ,  H01J2237/2811

摘要： A charged particle instrument including a controlling and operating unit for controlling a charged particle source, deflecting means, and focus changing means and making a data for an image by an electric signal detected by a detector, and a recording unit for preserving a correction coefficient registered at each image-acquisition, in which the controlling and operating unit acquires plural images while changing a focus, and controls an optical condition such that a landing angle of a charged particle beam becomes perpendicular when an image for measurement is acquired on the basis of a position shift amount of a mark in the image and a correction coefficient registered to the recording unit.

摘要翻译： 一种带电粒子仪器，包括用于控制带电粒子源的控制和操作单元，偏转装置和聚焦改变装置，以及通过由检测器检测的电信号为图像提供数据;以及记录单元，用于保持记录的校正系数 在每次图像获取期间，控制和操作单元在改变焦点的同时获取多个图像，并且控制光学条件，使得当基于以下步骤获得用于测量的图像时，带电粒子束的着陆角变为垂直 图像中的标记的位置偏移量和登记到记录单元的校正系数。